A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; bonding a first side of the silicon carbide wafer to the carrier wafer; splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting; and forming a graphene material on the silicon carbide layer.

A chemical sensor is described having a substrate comprising a plurality of nanoribbons of an active layered nanomaterial, and a substance detection component for measuring a change in electrical or physical properties of at least a portion of the plurality of nanoribbons when in contact with a substance.

The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.

The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.

One illustrative method disclosed herein includes forming a gate structure above a portion of a fin and performing a first epitaxial growth process to form a silicon-carbide (SiC) semiconductor material above the fin in the source and drain regions of a FinFET device. In this example, the method also includes performing a heating process so as to form a source/drain graphene contact from the silicon-carbide (SiC) semiconductor material in both the source and drain regions of the FinFET device and forming first and second source/drain contact structures that are conductively coupled to the source/drain graphene contact in the source region and the drain region, respectively, of the FinFET device.

Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm.sup.2/Vs to the diamond lattice at 100 kPa and 300K, and wherein the n-type donor atoms are introduced to the lattice through ion tracks.

Some embodiments include an integrated assembly having a conductive structure, an annular structure extending through the conductive structure, and an active-material-structure lining an interior periphery of the annular structure. The annular structure includes dielectric material. The active-material-structure includes two-dimensional-material. Some embodiments include methods of forming integrated assemblies.

A stacked structure includes: an insulating substrate; a graphene film that is formed on the insulating substrate; and a protective film that is formed on the graphene film and is made of a transition metal oxide, which is, for example, Cr.sub.2O.sub.3. Thereby, at the time of transfer of the graphene, polymeric materials such as a resist are prevented from directly coming into contact with the graphene and nonessential carrier doping on the graphene caused by a polymeric residue of the resist is suppressed.

Amorphous two-dimensional graphene-like carbon films provide benefits to a variety of applications due to advantageous electrical, mechanical, and chemical properties. Methods are provided to efficiently and cheaply create high-quality amorphous two-dimensional carbon films with embedded graphene-like nanocrystallites using coal as a precursor. These methods employ solution-phase deposition of coal-derived graphene-containing quantum dots followed by relatively low-temperature annealing/crosslinking of the quantum dots to form a single two-dimensional layer of carbon that includes a plurality of randomly-oriented discrete graphene domains connected to each other via amorphous carbon regions. Multi-layer films can be easily created by repeating the deposition and annealing processes. Two-dimensional carbon films formed in this manner exhibit improved properties when compared to crystalline graphene sheets and have properties especially suited to use as the storage medium of memristors. Further processing can result in large free-standing two-dimensional graphene-like carbon thin films that can be used as membranes or for other applications.

A SiC ohmic contact preparation method is provided and includes: selecting a SiC substrate; preparing a graphene/SiC structure by forming a graphene on a Si-face of the SiC substrate; depositing an Au film on the graphene of the graphene/SiC structure; forming a first transfer electrode pattern on the Au film by a first photolithography; etching the Au film uncovered by the first transfer electrode pattern through a wet etching; etching the graphene uncovered by the Au film through a plasma etching after the wet etching; forming a second transfer electrode pattern on the SiC substrate by a second photolithography; depositing an Au material on the Au film exposed by the second transfer electrode pattern and forming an Au electrode and then annealing. The graphene reduces potential barrier associated with the SiC interface, specific contact resistance of ohmic contact reaches the order of 10.sup.−7˜10.sup.−8 Ω.Math.cm.sup.2, and the method has high repeatability.