A method is described for preparing a nanorods assembly. The method comprises providing a mixture comprising at least a liquid crystal and nanorods and depositing said mixture on the surface of at least substrate. The method further comprises aligning said nanorods with their long axis of the nanorods along a preferred direction on said substrate resulting in a nanorods and liquid crystal assembly, said aligning being performed by applying an external alternating current electrical field.

The present application discloses a method of preparing quantum dots. The method includes combining a first quantum dots precursor and a second quantum dots precursor to form a first reaction mixture including a supercritical liquid medium; nucleating and growing the quantum dots from the first quantum dots precursor and the second quantum dots precursor in the first reaction mixture including the supercritical liquid medium; and forming a solid quantum dots material in the presence of the supercritical liquid medium.

A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.

A method for preparing a magic-sized nano-crystalline substance, wherein a component containing at least one metal element of groups IIB, IIIA and IVA in the periodic table, and a component containing at least one non-metal element of groups VIA and VA are used as raw materials. In a reaction system for preparing a conventional nano-crystalline substance and in an inert gas atmosphere, after heating the reaction, reactants are cooled to a temperature 50% lower than the actual heating temperature of the reaction thereof, and after standing, the target product of the magic-sized nano-crystalline substance is obtained. The required pure target product can be obtained by the preparation method.

In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

A method for forming a semiconductor device having a lateral semiconductor heterojunction involves forming a first metal chalcogenide layer of the lateral semiconductor heterojunction adjacent to a first metal electrode on a substrate. The first metal chalcogenide layer includes a same metal as the first metal electrode and at least some of the first metal chalcogenide layer includes metal from the first metal electrode. A second metal chalcogenide layer of the lateral semiconductor heterojunction is formed adjacent to the first metal chalcogenide layer. A second metal electrode is formed adjacent to the second metal chalcogenide layer. The second metal chalcogenide layer includes a same metal as the second metal electrode.

In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

An improved feeder system and method for continuous vapor transport deposition that includes at least two vaporizers couple to a common distributor through an improved seal for separately vaporizing and collecting at least any two vaporizable materials for deposition as a material layer on a substrate. Multiple vaporizer provide redundancy and allow for continuous deposition during vaporizer maintenance and repair.

Production of a transistor, the channel structure of which comprises at least one finned channel structure, the method comprising: forming, from a substrate (1), a molding block (3), forming, on the molding block, a thin layer (7) made from a given semiconductor or semi-metallic material, and consisting of one to ten atomic or molecular monolayers of two-dimensional crystal, withdrawing the molding block while retaining a portion (7a) of the thin layer extending against a lateral face of the molding block, said retained portion (7a) forming a fin that is capable of forming a channel structure of the transistor, producing a coating gate electrode against said fin.

A coated quantum dot is provided wherein the quantum dot is characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90 C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25 C. Products including quantum dots described herein are also disclosed.