The present application discloses a method of preparing quantum dots. The method includes combining a first quantum dots precursor and a second quantum dots precursor to form a first reaction mixture including a supercritical liquid medium; nucleating and growing the quantum dots from the first quantum dots precursor and the second quantum dots precursor in the first reaction mixture including the supercritical liquid medium; and forming a solid quantum dots material in the presence of the supercritical liquid medium.

A method for preparing a magic-sized nano-crystalline substance, wherein a component containing at least one metal element of groups IIB, IIIA and IVA in the periodic table, and a component containing at least one non-metal element of groups VIA and VA are used as raw materials. In a reaction system for preparing a conventional nano-crystalline substance and in an inert gas atmosphere, after heating the reaction, reactants are cooled to a temperature 50% lower than the actual heating temperature of the reaction thereof, and after standing, the target product of the magic-sized nano-crystalline substance is obtained. The required pure target product can be obtained by the preparation method.

A method for forming a semiconductor device having a lateral semiconductor heterojunction involves forming a first metal chalcogenide layer of the lateral semiconductor heterojunction adjacent to a first metal electrode on a substrate. The first metal chalcogenide layer includes a same metal as the first metal electrode and at least some of the first metal chalcogenide layer includes metal from the first metal electrode. A second metal chalcogenide layer of the lateral semiconductor heterojunction is formed adjacent to the first metal chalcogenide layer. A second metal electrode is formed adjacent to the second metal chalcogenide layer. The second metal chalcogenide layer includes a same metal as the second metal electrode.

Production of a transistor, the channel structure of which comprises at least one finned channel structure, the method comprising: forming, from a substrate (1), a molding block (3), forming, on the molding block, a thin layer (7) made from a given semiconductor or semi-metallic material, and consisting of one to ten atomic or molecular monolayers of two-dimensional crystal, withdrawing the molding block while retaining a portion (7a) of the thin layer extending against a lateral face of the molding block, said retained portion (7a) forming a fin that is capable of forming a channel structure of the transistor, producing a coating gate electrode against said fin.

A coated quantum dot is provided wherein the quantum dot is characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90 C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25 C. Products including quantum dots described herein are also disclosed.

A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.

Provided is a thin film transistor including a source electrode, a drain electrode, and a channel layer connecting the source electrode and the drain electrode. The channel layer includes a tin-based oxide represented by SnMO, wherein M includes at least one of a non-metal chalcogen element or a halogen element.

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

A semiconductor nanoparticle dispersion is provided. The semiconductor nanoparticle including a plurality of semiconductor nanoparticles having a radius equal to or larger than an exciton Bohr radius; and a solvent dispersed with the plurality of semiconductor nanoparticles.

Techniques for minimizing loss of volatile components during thermal processing of kesterite films are provided. In one aspect, a method for annealing a kesterite film is provided. The method includes: placing a cover over the kesterite film; and annealing the cover and the kesterite film such that, for an entire duration of the annealing, the cover is at a temperature T1 and the kesterite film is at a temperature T2, wherein the temperature T1 is greater than or equal to the temperature T2. Optionally, during a cool down segment of the annealing, conditions can be reversed to have the temperature T1 be less than the temperature T2. A solar cell and method for formation thereof using the present annealing techniques are also provided.