Apparatus, systems, and methods for forming semiconductor materials (e.g., using nanofabrication) are generally described. In one example, a method comprises formation of a carbon buffer layer on a first substrate and a graphene layer on the carbon buffer layer by silicon sublimation, followed by removing the graphene layer so as to expose the carbon buffer layer and form a fabrication platform.

A process for fabricating a heterostructure made of semiconductor materials having a crystalline structure of wurtzite type, includes the following steps: structuring a surface of a zinc oxide monocrystalline substrate into mesas; depositing by epitaxy at least one layer of semiconductor materials having a crystalline structure of wurtzite type, forming the heterostructure, on top of the structured surface. Heterostructure obtained by such a process. A process for fabricating at least one electronic or optoelectronic device from such a heterostructure is also provided.

A method of forming a fin field effect transistor (finFET) having fin(s) with reduced dimensional variations, including forming a dummy fin trench within a perimeter of a fin pattern region on a substrate, forming a dummy fin fill in the dummy fin trench, forming a plurality of vertical fins within the perimeter of the fin pattern region, including border fins at the perimeter of the fin pattern region and interior fins located within the perimeter and inside the bounds of the border fins, wherein the border fins are formed from the dummy fin fill, and removing the border fins, wherein the border fins are dummy fins and the interior fins are active vertical fins.

A semiconductor device includes a semiconductor fin, a gate structure, a doped semiconductor layer, and a dielectric structure. The semiconductor fin has a top portion and a lower portion extending from the top portion to a substrate. The gate structure extends across the semiconductor fin. The doped semiconductor layer interfaces the top portion of the semiconductor fin. In a cross-section taken along a lengthwise direction of the gate structure, the doped semiconductor layer has an outer profile conformal to a profile of the top portion of the semiconductor fin.

Embodiments of methods and structures for forming a 3D integrated wiring structure are disclosed. The method can include forming an insulating layer on a front side of a first substrate; forming a semiconductor layer on a front side of the insulating layer; patterning the semiconductor layer to expose at least a portion of a surface of the insulating layer; forming a plurality of semiconductor structures over the front side of the first substrate, wherein the semiconductor structures include a plurality of conductive contacts and a first conductive layer; joining a second substrate with the semiconductor structures; performing a thinning process on a backside of the first substrate to expose the insulating layer and one end of the plurality of conductive contacts; and forming a conductive wiring layer on the exposed insulating layer.

An apparatus for depositing a layer of semiconductor material on a substrate wafer. The apparatus includes a base ring between an upper and a lower dome, a susceptor as carrier of the substrate wafer during the deposition of the layer, a gas inlet and a gas outlet, an outgoing gas line and gas supply lines for passing process gas over an upper side face of the substrate wafer, a slit valve tunnel and a slit valve door, and a lifting and rotating unit for lifting and turning the susceptor and the substrate wafer. The apparatus also including an amorphous layer including silicon and hydrogen disposed over one or more stainless steel components of the apparatus.

A stack including a silicon oxide layer, a germanium-containing layer, and a III-V compound semiconductor layer is formed over a substrate. An alternating stack of insulating layers and spacer material layers is formed over the III-V compound semiconductor layer. The spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers. Memory openings are formed through the alternating stack and into the III-V compound semiconductor layer. Memory opening fill structures including a memory film and a vertical semiconductor channel are formed in the memory openings. The vertical semiconductor channels can include a III-V compound semiconductor channel material that is electrically connected to the III-V compound semiconductor layer. The substrate and at least a portion of the silicon oxide layer can be subsequently detached.

A method of forming a fin field effect transistor (finFET) having fin(s) with reduced dimensional variations, including forming a dummy fin trench within a perimeter of a fin pattern region on a substrate, forming a dummy fin fill in the dummy fin trench, forming a plurality of vertical fins within the perimeter of the fin pattern region, including border fins at the perimeter of the fin pattern region and interior fins located within the perimeter and inside the bounds of the border fins, wherein the border fins are formed from the dummy fin fill, and removing the border fins, wherein the border fins are dummy fins and the interior fins are active vertical fins.

A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO.sub.3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.

Methods and systems for forming structures including a superlattice of silicon-containing epitaxial layers using nanoparticles. Exemplary methods can include forming nanoparticles in situ and depositing the nanoparticles onto a substrate surface to thereby form the epitaxial layers.