A group 13 nitride crystal layer is composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof, and the group 13 nitride crystal layer includes an upper surface and bottom surface. The group 13 nitride crystal layer includes high-luminance layers and low-luminance layers being present alternately, and the low-luminance layers have thicknesses of 3 or larger and 10 or smaller provided that 1 is assigned to a thickness of the high-luminance layer, when a cross section of the group 13 nitride crystal layer cut in a direction perpendicular to the upper surface is observed by cathode luminescence.

PV layer sequences and corresponding production methods which can reliably provide a PV function with a long service life despite very low production costs. This is achieved by a reactive conditioning process of inorganic particles as part of a room-temperature printing method; the reactive surface conditioning process adjusts the PV activity in a precise manner, provides a kinetically controlled reaction product, and can ensure the desired PV activity even when using technically pure starting materials with 97% purity. In concrete embodiments, particles are printed in composite so as to form sub-sections on a support. Each sub-section has a reductively treated section and an oxidatively treated section, and the sections have PV activity with opposite signs. The sections can be cascaded in rows via upper-face contacts, and a precise light-dependent potential sum can be tapped via a PV measuring group.

The present invention is a method for manufacturing a gallium oxide film where a mist generated by atomizing a raw-material solution or by forming a raw-material solution into droplets is conveyed using a carrier gas, the mist is heated, and the mist is subjected to a thermal reaction on the substrate to form a film, where as the raw-material solution, a raw-material solution containing at least a chloride ion and a gallium ion is used, and the mist is heated for 0.002 seconds or more and 6 seconds or less. This provides a method for manufacturing an α-gallium oxide film at low cost with excellent film forming speed.

A microelectronic device is formed by forming at least a portion of a substrate of the microelectronic device by one or more additive processes. The additive processes may be used to form semiconductor material of the substrate. The additive processes may also be used to form dielectric material structures or electrically conductive structures, such as metal structures, of the substrate. The additive processes are used to form structures of the substrate which would be costly or impractical to form using planar processes. In one aspect, the substrate may include multiple doped semiconductor elements, such as wells or buried layers, having different average doping densities, or depths below a component surface of the substrate. In another aspect, the substrate may include dielectric isolation structures with semiconductor material extending at least partway over and under the dielectric isolation structures. Other structures of the substrate are disclosed.

Provided is a laminated structure that has a crystalline film having a large area, which is useful for a semiconductor device, etc., and having a good film thickness distribution in which the film thickness is 30 μm or less, and that has excellent heat dissipation. In a laminated structure in which a crystal film containing a crystalline metal oxide as a main component is laminated on a support directly or with another layer therebetween, the support has a thermal conductivity of 100 W/m.Math.K or more at room temperature, and the crystal film has a corundum structure. Furthermore, the film thickness of the crystal film is 1 μm to 30 μm, the area of the crystal film is 15 cm.sup.2 or more, the distribution of the film thickness in the area is in the range of ±10% or less.

Provided is a method for forming a chalcogenide thin film, the method including forming a chalcogen element-containing film on a carrier substrate, disposing the chalcogen element-containing film on a silicon wafer, wherein the surface of the silicon wafer and the surface of the chalcogen element-containing film are in contact with each other, performing heat treatment on the silicon wafer and the chalcogen element-containing film at least one time, and removing the carrier substrate. The silicon wafer has a crystal plane of (111).

A PCSS comprises a photoconductive semiconductor block that exhibits electrically-conductive behavior when exposed to light of a predetermined wavelength; two or more electrodes fixed to the photoconductive semiconductor block and connectable to a power supply; a resonance cavity enveloping the photoconductive semiconductor block, the resonance cavity having a reflective outer surface to trap light within the resonance cavity and the photoconductive semiconductor block, the resonance cavity having a window through the reflective outer surface to admit light of the predetermined wavelength, the resonance cavity being transmissive to light of the predetermined wavelength within the reflective outer surface; and a light source directed toward the photoconductive semiconductor block and through the window, and emitting light at the predetermined wavelength. The photoconductive semiconductor block may include Si, GaAs, GaN, AlN, SiC, and/or Ga.sub.2O.sub.3. The resonance cavity may include glass, crystal, Au, Ag, Cr, Ni, V, Pd, Pt, Ir, Rh, and/or Al.

A biaxially oriented SiC composite substrate includes a first biaxially oriented SiC layer that contains a threading screw dislocation and a basal plane dislocation, and a second biaxially oriented SiC layer that is formed continuously from the first biaxially oriented SiC layer and that contains 1×10.sup.16 atoms/cm.sup.3 or more and 1×10.sup.19 atoms/cm.sup.3 or less of a rare earth element. The defect density of a surface of the second biaxially oriented SiC layer is smaller than the defect density of the first biaxially oriented SiC layer.

A metal oxide composition includes: a solvent; a metal oxide; and a hydrogen cation source that includes a compound of Formula 1, or that includes a compound of Formula 2, or that includes any combination thereof:

##STR00001##

wherein, in Formulae 1 and 2, the variables are as described herein.

Provided is an α-Ga.sub.2O.sub.3 based semiconductor film having a crystal having a corundum-type crystal structure composed of α-Ga.sub.2O.sub.3 or an α-Ga.sub.2O.sub.3 solid solution as a main phase. This semiconductor film has a size in which the diameter of the largest circle inscribed in the outer circumference thereof is 5.08 cm (2 inches) or more, and at the center point X and each of four outer circumferential points A, B, C, and D of the largest circle on the surface of the semiconductor film, the full width at half maximum of the peak in the vicinity of 216 cm.sup.−1 in Raman spectrum of the semiconductor film, as measured by laser Raman spectroscopy, is 6.0 cm.sup.−1 or less.