A method is disclosed for forming an emissive layer of a light-emitting device. One or more layers of the light-emitting device are formed. A solution including quantum dots having ligands at the outer surface thereof is contacted with the uppermost layer of the light-emitting device. A portion of the solution is subjected to external activation stimuli to form a crosslinked layer on the uppermost formed layer of the light-emitting device, the crosslinked layer including the ligands at the outer surface of the quantum dots in a crosslinked state. The solution is washed away, and the crosslinked layer is contacted with ligand exchange solution including compact ligands to perform a ligand exchange. Also disclosed is a light-emitting device including an anode, cathode, and emissive layer disposed therebetween, the emissive layer including quantum dots and compact ligands at the outer surface thereof.

Provided is an oxide semiconductor gas sensor with improved performance that senses selectively methylbenzene gases with high sensitivity. The gas sensor includes a gas sensing layer composed of palladium (Pd)-loaded cobalt oxide (Co.sub.3O.sub.4) nanostructures. The response of the gas sensor according to the present invention to xylene gas at a concentration as low as 5 ppm is at least 150 times higher than that to ethanol gas. The response of the gas sensor to toluene gas at a concentration as low as 5 ppm is at least 100 times higher than that to ethanol gas. In addition, the oxide semiconductor gas sensor has the ability to selectively detect methylbenzene gases, including xylene and toluene (with at least 30-fold higher response to xylene and at least 15 times higher response to toluene than that to ethanol gas).

An electric field drives nanocrystals dispersed in solvents to assemble into ordered three-dimensional superlattices. A first electrode and a second electrode 214 are in the vessel. The electrodes face each other. A fluid containing charged nanocrystals fills the vessel between the electrodes. The electrodes are connected to a voltage supply which produces an electrical field between the electrodes. The nanocrystals will migrate toward one of the electrodes and accumulate on the electrode producing ordered nanocrystal accumulation that will provide a superlattice thin film, isolated superlattice islands, or coalesced superlattice islands.

As an aspect of an embodiment, a crystal contains a metal oxide containing Ga and Mn and having a corundum structure.

The present invention relates to an application liquid for forming a semiconductor film, the application liquid comprising: an inorganic semiconductor particle; and a compound having a relative permittivity of 2 or more or a compound having reducing power against the inorganic semiconductor particle; a method for producing a semiconductor film comprising a step of applying the application liquid; a semiconductor film and a semiconductor element comprising the semiconductor film; and a method for producing the semiconductor element.

A method is described for preparing a nanorods assembly. The method comprises providing a mixture comprising at least a liquid crystal and nanorods and depositing said mixture on the surface of at least substrate. The method further comprises aligning said nanorods with their long axis of the nanorods along a preferred direction on said substrate resulting in a nanorods and liquid crystal assembly, said aligning being performed by applying an external alternating current electrical field.

A deposition method is provided wherein a donor substrate (10) is arranged opposite a target substrate (20), the donor substrate having a surface (12) facing the target substrate that is provided with a viscous donor material (14). An optical beam (30) is directed via the donor substrate to the donor material so as to release the donor material and to therewith transfer the donor material as a jet towards the target substrate. In the method provided herein an input signal (D.sub.S) is received that specifies a shape to be assumed by the jet with which the donor material is to be transferred and an energy profile of the optical beam is accordingly controlled. Additionally or alternatively the energy profile of the optical beam may be controlled in accordance with a pattern according to which the donor material is to be deposited on the target substrate. Likewise a corresponding deposition apparatus is provided.

This invention provides a paste composition that enables a silicon germanium layer to be formed safely and easily, and a method for forming a silicon germanium layer safely and easily. The present invention provides a paste composition for forming a silicon germanium layer, the composition comprising aluminum and germanium, wherein the content of the germanium is more than 1 part by mass and 10000 parts by mass or less, per 100 parts by mass of the aluminum.

A method for annealing an absorber layer is disclosed, the method including contacting a surface of the absorber layer with an annealing material provided as a gel. The annealing material comprises cadmium chloride and a thickening agent. A viscosity of the gel of the annealing material is greater than or equal to 5 millipascal seconds.

In a first aspect of a present inventive subject matter, a semiconductor device includes an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer. The i-type semiconductor layer includes an oxide semiconductor as a major component. The oxide semiconductor that is included as the major component of the i-type semiconductor layer includes at least one metal selected from among aluminum, indium, and gallium.