In an embodiment, a system includes a three-dimensional (3D) printer, a neutral feedstock, a p-doped feedstock, an n-doped feedstock, and a laser. The 3D printer includes a platen and an enclosure. The platen includes an inert metal. The enclosure includes an inert atmosphere. The neutral feedstock is configured to be deposited onto the platen. The neutral feedstock includes a halogenated solution and a nanoparticle having a negative electron affinity. The p-doped feedstock is configured to be deposited onto the platen. The p-doped feedstock includes a boronated compound introduced to the neutral feedstock. The n-doped feedstock is configured to be deposited onto the platen. The n-doped feedstock includes a phosphorous compound introduced to the neutral feedstock. The laser is configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, layers of a ceramic comprising a neutral layer, a p-doped layer, and an n-doped layer.

A semiconductor film containing silicon that is evenly doped in the semiconductor film with an enhanced semiconductor property and a method of the semiconductor film using a dopant material containing a complex compound that contains at least silicon and a halogen. The complex compound further contains a hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted. A semiconductor film containing Si doped into the semiconductor film as a dopant to a depth that is at least 0.3 m or deeper from a surface of the semiconductor film is obtained by forming the semiconductor film in that the dopant material is doped, the semiconductor film is 100 m or less in film thickness with carrier density that is 110.sup.20/cm.sup.3 or less and electron mobility that is 1 cm.sup.2/Vs or more.

The present method for the first time proposes a method for producing an electrotechnical thin layer which makes it possible to carry out process control at room temperature by using an additional reagent, thereby providing stable, thin layers in a very short time. Capacitive accumulators that could replace a Li-ion battery in a tablet PC and more far-reaching applications are thus possible even for cases of gross, industrial process control.

Techniques for growing, at least one of: (a) quantum dots and (b) nano-crystals, on a surface of a material are provided. One method comprises placing a precursor on the surface; adding an antisolvent to the precursor; and growing at least one of the quantum dots and the nanocrystals on the surface.

A device having a nano-wire array and a method for manufacturing an array of nano-wires. The method includes spraying on a substrate droplets of a suspension that comprises nano-wires and at least a partially volatile solvent; and evaporating the at least partially volatile solvent of the droplets to form the array of nano-wires. At least one of the spraying and the evaporating comprises executing at least one aggregation reduction measure for limiting a formation of three dimensional aggregations of nano-wires on the substrate.

A semiconductor apparatus capable of reducing the leakage current in the reverse direction, and keeping characteristics thereof, even when using n type semiconductor (gallium oxide, for example) or the like having a low-loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC is provided. A semiconductor apparatus includes a crystalline oxide semiconductor having a corundum structure as a main component, and an electric field shield layer and a gate electrode that are respectively laminated directly or through other layers on the n type semiconductor layer, wherein the electric field shield layer includes a p type oxide semiconductor, and is embedded in the n type semiconductor layer deeper than the gate electrode.

The present invention generally relates to a method for preparing structurally unique nanomaterials and the products thereof. In particular, the present invention discloses a method for preparing an array of ultra-narrow nanowire or nanorod on a patterned monolayer supported by a 2D material substrate in a controlled environment, wherein said pattered monolayer comprises a polymerizable amphiphiles such as phospholipid with a terminal amine and wherein said controlled environment comprises a major nonpolar solvent, a trace amount of polar solvent, and a unsaturated aliphatic amine. Gold nanowires (AuNWs) so prepared have a highly controlled diameter of about 2 nm, a length up to about 1000 nm, and an AuNW ordering over an area >100 m.sup.2.

The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus includes a gate electrode and a channel layer formed of a channel directly or through other layers on a side wall of the gate electrode, and wherein a portion of or whole the channel layer may be a p type oxide semiconductor (iridium oxide, for example).

A semiconductor device includes an oxide semiconductor film having a corundum structure or containing as a major component gallium oxide or a mixed crystal of gallium oxide, and the semiconductor device is a normally-off semiconductor device with a threshold voltage that is 3V or more.

A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate together with a carrier gas having an oxygen concentration equal to or less than 21 vol % so as to epitaxially grow the oxide film on the surface of the substrate; and bringing the oxide film into contact with a fluid comprising oxygen atoms after the epitaxial growth of the oxide film.