In a first aspect of a present inventive subject matter, a semiconductor device includes an n-type semiconductor layer including a first semiconductor as a major component, an i-type semiconductor layer including a second semiconductor as a major component and a p-type semiconductor layer including a third semiconductor as a major component. The second semiconductor contains a corundum-structured oxide semiconductor.

In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer including an -phase crystalline oxide semiconductor with a first composition, and a second semiconductor layer including an -phase crystalline oxide semiconductor with a second composition that is different from the first composition of the first semiconductor layer, and the second semiconductor layer is layered on the first semiconductor layer.

A metal oxide film and a manufacturing method thereof, a thin film transistor and an array substrate are provided. The manufacturing method of the metal oxide film includes: forming a metal oxide film on a base substrate; and supplying a negative ion to the metal oxide film for a preset time period by performing a anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide.

In an embodiment, a system includes a three-dimensional (3D) printer, a feedstock, and a laser. The three-dimensional printer includes a platen including an inert metal, and an enclosure including an inert atmosphere. The feedstock is configured to be deposited onto the platen. The feedstock includes a halogenated solution and a nanoparticle having negative electron affinity. The laser is configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, a ceramic and a diatomic halogen.

A method is disclosed for forming an emissive layer of a light-emitting device. One or more layers of the light-emitting device are formed. A solution including quantum dots having ligands at the outer surface thereof is contacted with the uppermost layer of the light-emitting device. A portion of the solution is subjected to external activation stimuli to form a crosslinked layer on the uppermost formed layer of the light-emitting device, the crosslinked layer including the ligands at the outer surface of the quantum dots in a crosslinked state. The solution is washed away, and the crosslinked layer is contacted with ligand exchange solution including compact ligands to perform a ligand exchange. Also disclosed is a light-emitting device including an anode, cathode, and emissive layer disposed therebetween, the emissive layer including quantum dots and compact ligands at the outer surface thereof.

A method of manufacturing an oxide semiconductor, includes impregnating a substrate in a solution containing a metal precursor and hydroxyl ions, and forming a metal oxide on the substrate by applying a voltage to the solution. The solution includes a surfactant, and the direction of crystal growth of the metal oxide is controllable based on the surfactant.

The present disclosure provides a semiconductor heterojunction. The semiconductor heterojunction includes a bottom semiconductor, a top semiconductor and an electrode substrate. An upper surface of the bottom semiconductor includes a first facet. A lower surface of the top semiconductor includes a second facet, and the lower surface of the top semiconductor is contacted with the upper surface of the bottom semiconductor. The electrode substrate is disposed below the bottom semiconductor.

A method of fabricating a heterostructure system, comprises epitaxially growing a crystalline layer of a first substance on a crystalline base layer by surface catalysis in a solution, wherein the growth is self-terminated once a monolayer of the substance is formed on the base layer.

This invention relates to photovoltaic devices such as photovoltaic cells and photodetectors. The invention provides processes for fabrication of the devices and methods of use thereof. The invention is further related to controlled growth of nanowire arrays using elongated shapes as guides on the surface.

In an embodiment, a system includes a three-dimensional (3D) printer, a feedstock, and a laser. The three-dimensional printer includes a platen including an inert metal, and an enclosure including an inert atmosphere. The feedstock is configured to be deposited onto the platen. The feedstock includes a halogenated solution and a nanoparticle having negative electron affinity. The laser is configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, a ceramic and a diatomic halogen.