An α-Ga.sub.2O.sub.3 semiconductor film according to the present invention has a measurement point (dark spot) with a maximum emission intensity A of not more than 0.6 times the average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is determined in the wavelength range of 250 to 365 nm.

A device for coating semiconductor/semiconductor precursor particles on a flexible substrate and a preparation method of a semiconducting thin film, wherein the device includes: a container for a first and second solvent substantially immiscible; injection means for injecting a predetermined dispersion volume of at least one layered semiconductor particle material or its precursor(s), occurring at a liquid-liquid interface formed within the container and between the first and second solvent, and creating a particle film at the liquid-liquid interface; a first support means; substrate extracting means; substrate supply means; compression means, reducing a distance between particles and push the film onto the substrate, wherein the compression means includes several pushing means mounted on a drive device, wherein at least two of the several pushing means are at least partially submerged in the second solvent during drive device rotation, and moved through the second solvent toward the first support means.

The present disclosure provides a manufacturing method of a complementary metal-oxide-semiconductor (CMOS) inverter includes annealing a substrate printed with an oxide ink to obtain a first active layer, printing a carbon tube ink between a first source and the first drain to form a second active layer for obtaining a first thin-film transistor (TFT), forming a second source and a second drain on two sides of the first active layer to obtain a second TFT, and forming wires between the first TFT and the second TFT.

Printable inks based on a 2D semiconductor, such as MoS2, and its applications in fully inkjet-printed optoelectronic devices are disclosed. Specifically, percolating films of MoS2 nanosheets with superlative electrical conductivity (10-2 s m-1) are achieved by tailoring the ink formulation and curing conditions. Based on an ethyl cellulose dispersant, the MoS2 nanosheet ink also offers exceptional viscosity tunability, colloidal stability, and printability on both rigid and flexible substrates. Two distinct classes of photodetectors are fabricated based on the substrate and post-print curing method. While thermal annealing of printed devices on rigid glass substrates leads to a fast photoresponse of 150 μs, photonically annealed devices on flexible polyimide substrates possess high photoresponsivity exceeding 50 mA/W. The photonically annealed photodetector also significantly reduces the curing time down to the millisecond-scale and maintains functionality over 500 bending cycles, thus providing a direct pathway to roll-to-roll manufacturing of next-generation flexible optoelectronics.

The present invention relates to a method for preparing a nanosheet including the steps of: depositing a solution onto a substrate to form a first layer, wherein the substrate is rotatable relative to the depositing solution; depositing and condensing target material onto the first layer to form a second layer; and separating the second layer from the first layer and the substrate to form a nanosheet. Also disclosed a multilayer structure including: a substrate; a first layer arranged to deposit onto the substrate, wherein the substrate is rotatable relative to the depositing of the first layer; and a second layer arranged to deposit onto the first layer and separable from the first layer to form a nanosheet.

Disclosed is a method for synthesizing single crystalline molybdenum disulfide via a hydrothermal process that minimizes or eliminates carbon byproducts. The method involves providing two components, including a source of molybdenum and a mineralizer solution, to an inert reaction vessel, heating one zone sufficiently to dissolve the source of molybdenum in the mineralizer solution, and heating a second zone to a lower temperature to allow thermal transport to drive the dissolved material to the second zone, and then precipitate MoS.sub.2 on a seed crystal.

A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate while heating the substrate at a first temperature so as to epitaxially grow the oxide film on the surface; and bringing the oxide film into contact with a fluid comprising oxygen atoms while heating the oxide film at a second temperature higher than the first temperature after the epitaxial growth of the oxide film.

A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate together with a carrier gas having an oxygen concentration equal to or less than 21 vol % so as to epitaxially grow the oxide film on the surface of the substrate; and bringing the oxide film into contact with a fluid comprising oxygen atoms after the epitaxial growth of the oxide film.

A composition of matter having a coated silicon substrate with multiple alternating layers of polydopamine and polyallylamine bound copper-indium-gallium oxide (CIGO) nanoparticles on the substrate. A related composition of matter having polyallylamine bound to CIGO nanoparticles to form PAH-coated CIGO nanoparticles. A related CIGO thin film made via conversion of layer-by-layer assembled CIGO nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine or polystyrenesulfonate and then in the CIGO-PAH dispersion to fabricate CIGO films as thick as 1-2 microns.

A wafer processing apparatus is configured to process a wafer by supplying mist to a surface of the wafer. The wafer processing apparatus includes a furnace in which the wafer is disposed, a gas supplying device configured to supply gas into the furnace, a mist supplying device configured to supply the mist into the furnace, and a controller. The controller is configured to execute a processing step by controlling the gas supplying device and the mist supplying device to supply the gas and the mist into the furnace, respectively. The controller is further configured to control the mist supplying device to stop supplying the mist into the furnace while controlling the gas supplying device to keep supplying the gas into the furnace when the processing step ends.