The present disclosure relates to a strategy to synthesize antimony- and zinc-doped tin oxide particles with tunable band gap characteristics. The methods yield stable and monodispersed particles with great control on uniformity of shape and size. The methods produce undoped and antimony and zinc-doped tin oxide stand-alone and core-shell particles, both nanoparticles and microparticles, as well as antimony and zinc-doped tin oxide shells for coating particles, including plasmonic core particles.

Provided is a α-Ga.sub.2O.sub.3 based semiconductor film which is a semiconductor film in a circular shape having a crystal having a corundum-type crystal structure composed of α-Ga.sub.2O.sub.3 or an α-Ga.sub.2O.sub.3 solid solution as a main phase. The maximum value θ.sub.max and the minimum value θ.sub.min for off-angles at the center point X and four outer circumferential points A, B, C, and D of a surface of the semiconductor film satisfy the relationship of θ.sub.max-θ.sub.min≤0.30°. The off-angle is defined as an inclination angle θ of a crystal axis oriented in the substantially normal direction of the semiconductor film with respect to the film surface normal of the semiconductor film.

A method for forming a semi-conductive or conductive oxide film is provided. The oxide film is doped with a bismuth and made of an indium oxide, an aluminum oxide, a gallium oxide, an oxide including the gallium oxide, or an oxide of a combination thereof. The method includes supplying a mist of a solution to a surface of the substrate while heating the substrate. An oxide film material and a bismuth compound being dissolved in the solution. The bismuth compound is selected from the group consisting of bismuth ethoxide, bismuth acetate oxide, bismuth acetate, bismuth nitrate pentahydrate, bismuth nitrate, bismuth oxynitrate, bismuth 2-ethylhexanoate, bismuth octanoate, bismuth naphthenate, bismuth subgallate, bismuth subsalicylate, bismuth chloride, bismuth oxychloride, bismuth citrate, bismuth oxyacetate, bismuth oxide perchlorate, bismuth oxysalicylate, bismuth bromide, bismuth iodide, bismuth hydroxide, bismuth oxycarbonate, bismuth sulfide, bismuth sulfate, bismuth carbonate, and bismuth oxide.

Disclosed are a method of manufacturing a thin film transistor, a thin film transistor, a display panel, and a display device. The method includes forming a gate electrode, forming an oxide semiconductor layer at least partially overlapping the gate electrode, and forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein the forming of the oxide semiconductor layer includes forming a first oxide semiconductor layer, and forming a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a higher energy bandgap than the first oxide semiconductor layer, wherein the forming of the second oxide semiconductor layer is performed by a different process from the forming of the first oxide semiconductor layer, and the forming of the second oxide semiconductor layer includes spraying a precursor solution for the second oxide semiconductor on the first oxide semiconductor layer followed by heat treatment.

Disclosed is a thin-film transistor including a substrate including a gate electrode formed thereon, a gate insulating film disposed on an entire face of the substrate, a semiconductor layer disposed on an entire face of the gate insulating film, and source and drain electrodes disposed on the semiconductor layer so as to be spaced apart from each other, wherein the semiconductor layer includes cesium tin triiodide (CsSnI.sub.3) or methylammonium tin triiodide (MASnI.sub.3), wherein the semiconductor layer further contains an additive.

A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.

A method for producing a gallium oxide semiconductor film by a mist CVD method, including, a mist-forming step in which a raw material solution containing gallium is misted in a mist-forming unit to generate mist, a carrier gas supply step of supplying a carrier gas for transferring the mist to the mist-forming unit, a transferring step of transferring the mist from the mist-forming unit to a film forming chamber using the carrier gas via a supply pipe connecting the mist-forming unit and the film forming chamber, a rectification step of rectifying flow of the mist and the carrier gas supplied to a surface of a substrate in the film forming chamber so as to flow along the surface of the substrate, a film forming step of heat-treating the rectified mist to form a film on the substrate, and an exhaust step of exhausting waste gas upward from the substrate.

Provided are a multilayer structure in which crystal defects due to stress concentration in a semiconductor layer caused by an insulator film are prevented and a semiconductor device using the multilayer structure, the multilayer structure and the semiconductor device that are particularly useful for power devices. A multilayer structure in which an insulator film is arranged on a part of a semiconductor film, wherein the semiconductor film has a corundum structure and contains a crystalline oxide semiconductor containing one or two or more metals selected from groups 9 and 13 of the periodic table, and wherein the insulator film has a taper angle of 20° or less.

A method for producing a doping raw-material solution for film formation includes a step of firstly mixing a solute including a halogen-containing organic dopant compound or a dopant halide with a first solvent, but not with other solvents to prepare a dopant precursor solution separately from a film-forming raw material, where an acidic solvent is used as the first solvent. A method for producing a doping raw-material solution for film formation enables stable formation of a high-quality thin film having excellent electric characteristics.

Provided is a crystalline oxide film including: a plane tilted from a c-plane as a principal plane; gallium; and a metal in Group 9 of the periodic table, the metal in Group 9 of the periodic table among all metallic elements in the film having an atomic ratio of equal to or less than 23%.