Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

Disclosed is a method for manufacturing a low-temperature poly-silicon thin film transistor, which relates to the technical field of display panel. The method comprises steps of: forming a gate layer, an active layer, a source-drain contact layer and a source-drain electrode in sequence on a substrate. The step of forming the source-drain contact layer includes sub steps of: forming a channel protection layer; depositing an ohmic contact layer using a reaction gas containing diborane and through a plasma enhanced chemical vapor deposition method; and patterning the ohmic contact layer to form the source-drain contact layer. During deposition of the ohmic contact layer, boron ions can enter into the source-drain contact layer. According to this method, a mask is not needed to define an implanted region of boron ions. Therefore, a procedure of implanting the boron ions can be saved; the manufacturing procedure can be simplified; and the manufacturing cost can be reduced.

The disclosure provides an array substrate, including a substrate, a common line, a separation layer, a gate line layer, a first insulation layer, a data line layer, a second insulation layer, a first transparent electrode, a third insulation layer and a second transparent electrode overlapped in sequence, a first via hole is defined in the separation layer, a second via hole is defined in the first insulation layer, a third via hole and a fourth via hole communicated with the second via hole are defined in the second insulation layer, the first transparent electrode penetrates the first via hole, the second via hole and the fourth via hole to connect with the common line, a fifth via hole communicated with the third via hole is defined in the third insulation layer, the second transparent electrode is connected to the data line layer.

The disclosure provides an array substrate, including a substrate, a common line, a separation layer, a gate line layer, a first insulation layer, a data line layer, a second insulation layer, a first transparent electrode, a third insulation layer and a second transparent electrode overlapped in sequence, a first via hole is defined in the separation layer, a second via hole is defined in the first insulation layer, a third via hole and a fourth via hole communicated with the second via hole are defined in the second insulation layer, the first transparent electrode penetrates the first via hole, the second via hole and the fourth via hole to connect with the common line, a fifth via hole communicated with the third via hole is defined in the third insulation layer, the second transparent electrode is connected to the data line layer.

There is provided a method of forming a film on a surface to be processed of a workpiece, the method including: accommodating the workpiece with a single-crystallized substance formed on the surface to be processed, into a processing chamber; supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of the single-crystallized substance formed on the surface to be processed is suppressed; and supplying a source gas into the processing chamber to form an amorphous film on the surface to be processed of the workpiece.

Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.