Performed is a hydrogen anneal of heating a semiconductor wafer on which a thin film containing a dopant and carbon is formed to an anneal temperature in an atmosphere containing hydrogen. Subsequently, a hydrogen atmosphere in a chamber is replaced with an oxygen atmosphere, and the semiconductor wafer is preheated to a preheating temperature in the oxygen atmosphere. Performed then is a flash heating treatment of heating a surface of the semiconductor wafer to a peak temperature for less than one second. The semiconductor wafer is heated in the oxygen atmosphere, thus activation of dopant and binding of carbon in the thin film and oxygen in the atmosphere are promoted, and carbon is exhausted from the thin film to prevent hardening of the thin film. As a result, the thin film containing carbon can be easily peeled from the semiconductor wafer.

A heating device for heating a substrate is provided. The heating device comprises a support portion configured to support the substrate, and a light irradiation unit configured to heat the substrate by irradiating the substrate supported by the support portion with light. A plurality of zones are set in the light irradiation unit, and each of the plurality of zones set in the light irradiation unit irradiates different portions of a surface of the substrate supporeted by the support portion with light. During the heating by the light irradiation unit, the plurality of zones take turns so that some zones of the plurality of zones are utilized.

Methods and systems for implementing artificial intelligence enabled preparation end-pointing are disclosed. An example method at least includes obtaining an image of a surface of a sample, the sample including a plurality of features, analyzing the image to determine whether an end point has been reached, the end point based on a feature of interest out of the plurality of features observable in the image, and based on the end point not being reached, removing a layer of material from the surface of the sample.

According to one aspect of technique described herein, there is provided a technique including; a process chamber in which at least one substrate is processed; an electromagnetic wave supply part configured to supply an electromagnetic wave to the at least one substrate; a substrate holding part configured to hold the at least one substrate and at least one susceptor for suppressing the electromagnetic wave from being adsorbed to an edge of the at least one substrate; a substrate transfer part configured to transfer the at least one substrate; and a controller configured to control the substrate transfer part so as to correct a position of the at least one susceptor.

A front surface of a semiconductor wafer is rapidly heated by irradiation of a flash of light. Temperature of the front surface of the semiconductor wafer is measured at predetermined intervals after the irradiation of the flash of light, and is sequentially accumulated to acquire a temperature profile. From the temperature profile, an average value and a standard deviation are each calculated as a characteristic value. It is determined that the semiconductor wafer is cracked when an average value of the temperature profile deviates from the range of ±5σ from a total average of temperature profiles of a plurality of semiconductor wafers or when a standard deviation of the temperature profile deviates from the range of 5σ from the total average thereof of the plurality of semiconductor wafers.

A method for manufacturing a SiC-based electronic device, comprising the steps of: implanting, on a front side of a solid body made of SiC having a conductivity of an N type, dopant species of a P type thus forming an implanted region, which extends in the solid body starting from the front side and has a top surface coplanar with the front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region to temperatures comprised between 1500° C. and 2600° C. so as to form a carbon-rich electrical-contact region at the implanted region. The carbon-rich electrical-contact region forms an ohmic contact.

A semiconductor on insulator type substrate, comprising at least: a support layer; a semiconductor surface layer; a buried dielectric layer located between the support layer and the semiconductor surface layer; a trap rich layer located between the buried dielectric layer and the support layer, and comprising at least one polycrystalline semiconductor material and/or a phase change material; in which the trap rich layer comprises at least one first region and at least one second region adjacent to each other in the plane of the trap rich layer, the material of the at least one first region being in an at least partially recrystallized state and having an electrical resistivity less than that of the material in the at least one second region.

The semiconductor wafer is preheated by halogen lamps and then heated by a flash of light irradiation from flash lamps. A length of a light emission waveform of a flash of light applied from the flash lamps can be adjusted as appropriate. A data collection cycle (sampling interval) of a radiation thermometer that measures a surface temperature of the semiconductor wafer is made variable, and the longer the light emission waveform of the flash of light, the longer the data collection cycle. Even when a rising and falling time of the surface temperature of the semiconductor wafer changes due to the length of the light emission waveform of a flash of light, a temperature change can be included in a temperature profile with a constant number of data points until the surface temperature rises, goes through a maximum reaching temperature, and falls.

Described herein are methods for growing light emitting devices under ultra-violet (UV) illumination. A method includes growing a III-nitride n-type layer over a III-nitride p-type layer under UV illumination. Another method includes growing a light emitting device structure on a growth substrate and growing a tunnel junction on the light emitting device structure, where certain layers are grown under UV illumination. Another method includes forming a III-nitride tunnel junction n-type layer over the III-nitride p-type layer to form a tunnel junction light emitting diode. A surface of the III-nitride tunnel junction n-type layer is done under illumination during an initial period and a remainder of the formation is completed absent illumination. The UV light has photon energy higher than the III-nitride p-type layer's band gap energy. The UV illumination inhibits formation of Mg—H complexes within the III-nitride p-type layer resulting from hydrogen present in a deposition chamber.

The specification relates to a method for manufacturing a structured substrate provided with a trap-rich layer whereon rests a stack consisting of an insulating layer and of a layer of single-crystal material, the method comprising the following steps: a) a step of forming an amorphous silicon layer on a front face of a silicon substrate, b) a step of heat treating intended to convert the amorphous silicon layer into a trap-rich layer made of single-crystal silicon grains, the heat treatment conditions in terms of duration and of temperature being adjusted to limit the grains to a size less than 200 nm, c) a step of forming a stack by overlapping the trap-rich layer, and consisting of an insulating layer and of a layer of single-crystal material.