A method for manufacturing a semiconductor device includes forming an insulation film including a trench on a substrate, forming a first metal gate film pattern and a second metal gate film pattern in the trench, redepositing a second metal gate film on the first and second metal gate film patterns and the insulation film, and forming a redeposited second metal gate film pattern on the first and second metal gate film patterns by performing a planarization process for removing a portion of the redeposited second metal gate film so as to expose a top surface of the insulation film, and forming a blocking layer pattern on the redeposited second metal gate film pattern by oxidizing an exposed surface of the redeposited second metal gate film pattern.

Fin field effect transistors (FinFETs) include air-gaps between adjacent metal contacts and/or between metal contacts and the transistor gate. The air-gaps are formed during non-conformal deposition of an isolation dielectric in conjunction with a metal-first process to form the conductive structures.

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin comprising silicon. A plurality of gate structures is over the fin, individual ones of the plurality of gate structures along a direction orthogonal to the fin and having a pair of dielectric sidewall spacers. A trench contact structure is over the fin and directly between the dielectric sidewalls spacers of a first pair of the plurality of gate structures. A contact plug is over the fin and directly between the dielectric sidewalls spacers of a second pair of the plurality of gate structures, the contact plug comprising a lower dielectric material and an upper hardmask material.

One or more formation methods of a semiconductor device structure are provided. The method includes forming a dummy gate stack over a semiconductor substrate and forming spacer elements over sidewalls of the dummy gate stack. The method also includes removing the dummy gate stack to form a recess between the spacer elements. The method further includes partially removing the spacer elements such that an upper portion of the recess becomes wider. In addition, the method includes forming a metal gate stack in the recess and forming a protection element over the metal gate stack to fill the recess.

A method for producing an SGT-including semiconductor device includes forming a gate insulating layer on an outer periphery of a Si pillar, forming a gate conductor layer on the gate insulating layer, and forming an oxide layer on the gate conductor layer. Then a hydrogen fluoride ion diffusion layer containing hydrogen fluoride ions is formed so as to make contact with the oxide layer and lie at an intermediate position of the Si pillar. A part of the oxide film in contact with the hydrogen fluoride ion diffusion layer is etched and an opening is thereby formed on the outer periphery of the Si pillar.

A semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed in the first region and second region, respectively, wherein the first transistor includes a thick gate insulating layer and a thin buffer insulating layer formed in the substrate, a first gate electrode formed on the thick gate insulating layer, a first spacer formed on the thin buffer insulating layer, and a source region and a drain region formed in the substrate.

The present invention relates to a thin film transistor, a thin film transistor array panel, and a manufacturing method thereof. A thin film transistor according to an exemplary embodiments of the present invention includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a channel region overlapping the gate electrode, the gate insulating layer interposed between the channel region and the gate electrode; and a source region and a drain region, facing each other with respect to the channel region, positioned in the same layer as the channel region, and connected to the channel region, wherein the channel region, the source region, and the drain region comprise an oxide semiconductor, and wherein a carrier concentration of the source region and the drain region is larger than a carrier concentration of the channel region.

Semiconductor devices and methods of manufacturing semiconductor devices are provided. In embodiments a passivation process is utilized in order to reduce dangling bonds and defects within work function layers within a gate stack. The passivation process introduces a passivating element which will react with the dangling bonds to passivate the dangling bonds. Additionally, in some embodiments the passivating elements will trap other elements and reduce or prevent them from diffusing into other portions of the structure.

The invention describes a method for forming spacers (152a, 152b) of a field effect transistor gate, comprising a step of forming a protection layer (152) covering the gate of said transistor, at least a step of modifying the protection layer, executed after the step of forming the protection layer, by contacting the protection layer (152) with plasma comprising ions heavier than hydrogen and CxHy where x is the proportion of carbon and y is the proportion of hydrogen to form a modified protection layer (158) and a carbon film (271). The protection layer being nitride (N)-based and/or silicon (Si)-based and/or carbon (C)-based and shows a dielectric constant equal or less than 8.

A silicon carbide semiconductor device includes a silicon carbide semiconductor layer, a gate insulating film formed on the silicon carbide semiconductor layer, and a gate electrode provided on the gate insulating film, wherein the gate electrode has a polysilicon layer at least on a side of an interface with the gate insulating film, and the gate insulating film has an oxide film derived from the polysilicon layer, at an interface between the gate insulating film and the polysilicon layer of the gate electrode.