An imprint apparatus for forming a pattern in an imprint material on a substrate using an original as a mold, comprises an ultraviolet light generation device which irradiates with ultraviolet light which is curing light for curing the imprint material, and a control unit which controls a light amount of the ultraviolet light which is curing light. The control unit configured to perform a control of the light amount of the ultraviolet light acquires data of a defect distribution of the pattern formed on the substrate by the mold, and performs the control of the light amount of the ultraviolet light in a plurality of shot areas on the substrate based on the acquired data of the defect distribution.

A semiconductor processing method and semiconductor device are described. A substrate having a directed self-assembling material disposed thereon is heated to a temperature above the glass transition temperature of the directed self-assembling material, for example from about 325° C. to 380° C., in an RTP process. The substrate is then cooled at a controlled rate of less than 5° C./sec to 100° C. or lower.

Provided is a method of manufacturing a patterned substrate. The method may be applied to a process of manufacturing a device such as an electronic device or integrated circuit, or another use, for example, to manufacture an integrated optical system, a guidance and detection pattern of a magnetic domain memory, a flat panel display, a LCD, a thin film magnetic head or an organic light emitting diode, and used to construct a pattern on a surface to be used to manufacture a discrete tract medium such as an integrated circuit, a bit-patterned medium and/or a magnetic storage device such as a hard drive.

A method of fabricating a semiconductor structure includes: forming a conductive layer on a first insulating layer; etching a portion of the conductive layer to expose a portion of the first insulating layer; deforming a surface of the portion of the first insulating layer to form a rough surface of the first insulating layer; and removing a residue of the conductive layer on the rough surface of the first insulating layer.

A method for processing a substrate includes receiving a substrate having fluorinated polymer residue on a surface of the substrate. The fluorinated polymer residue is treated to provide a treated fluorinated polymer residue having increased sensitivity to electromagnetic (EM) radiation exposure. The treated fluorinated polymer residue is treated to EM radiation in an oxygen-containing environment to facilitate a cleaning process for removing the fluorinated polymer residue from the substrate.

A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

An electronic component which comprises an electrically conductive carrier, an electronic chip on the carrier, an encapsulant encapsulating at least part of at least one of the carrier and the electronic chip, and a functional structure covering a surface portion of the encapsulant, wherein at least part of the covered surface portion of the encapsulant is spatially selectively roughened.

A method of forming fine patterns includes forming pillars arrayed in rows and columns on an underlying layer and forming a spacer layer on the underlying layer to cover the pillars. Portions of the spacer layer respectively covering the pillars arrayed in each row or in each column are in contact with each other to provide first interstitial s paces disposed between the pillars arrayed in a diagonal direction between a row direction and a column direction as well as to provide cleavages at corners of each of the first interstitial spaces in a plan view. A healing layer is formed on the spacer layer to fill the cleavages of the first interstitial spaces. The healing layer is formed to provide second interstitial spaces respectively located in the first interstitial spaces as well as to include a polymer material.

A method includes forming a polymer layer covering a metal via in a wafer, grooving the wafer to form a trench, wherein the trench extends from a top surface of the polymer layer into the wafer, and performing a die-saw on the wafer to separate the wafer into a plurality of device dies. A kerf passes through the trench. One of the device dies is placed over a carrier. An encapsulating material is dispensed over and around the device die. The method further includes pressing and curing the encapsulating material. After the encapsulating material is cured, a sidewall of the polymer layer is tilted. A planarization is performed on the encapsulating material until the polymer layer and the metal via are exposed. A redistribution line is formed over and electrically coupled to the metal via.

A system and method of forming a planarization layer on a substrate is disclosed. The method can include holding a superstrate with a superstrate chuck, the superstrate chuck positioned relative to a diffusing element, where the diffusing element includes a pattern and the superstrate chuck includes one or more geometric features, and where the pattern of the diffusing element aligns with the one or more geometric features of the superstrate chuck. The method can also include dispensing a formable material over the substrate, contacting the formable material over the substrate with a superstrate, providing a set of beams that pass through the diffusing element to cure the formable material over the substrate and form a layer over the substrate while the superstrate is contacting the formable material.