A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 46 reconstruction surface, a 24 reconstruction surface, a 32 reconstruction surface, a 21 reconstruction surface, or a 44 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (Y.sub.2O.sub.3) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.

Warpage and breakage of integrated circuit substrates is reduced by compensating for the stress imposed on the substrate by thin films formed on a surface of the substrate. Particularly advantageous for substrates having a thickness substantially less than about 150 ?m, a stress-tuning layer is formed on a surface of the substrate to substantially offset or balance stress in the substrate which would otherwise cause the substrate to bend. The substrate includes a plurality of bonding pads on a first surface for electrical connection to other component.

Warpage and breakage of integrated circuit substrates is reduced by compensating for the stress imposed on the substrate by thin films formed on a surface of the substrate. Particularly advantageous for substrates having a thickness substantially less than about 150 ?m, a stress-tuning layer is formed on a surface of the substrate to substantially offset or balance stress in the substrate which would otherwise cause the substrate to bend. The substrate includes a plurality of bonding pads on a first surface for electrical connection to other component.

A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550? C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe.sub.2).sub.3, Zr(EtCp)(NMe.sub.2).sub.3, ZrCp(NMe.sub.2).sub.3, Zr(MeCp)(NEtMe).sub.3, Zr(EtCp)(NEtMe).sub.3, ZrCp(NEtMe).sub.3, Zr(MeCp)(NEt.sub.2).sub.3, Zr(EtCp)(NEt.sub.2).sub.3, ZrCp(NEt.sub.2).sub.3, Zr(iPr.sub.2Cp)(NMe.sub.2).sub.3, Zr(tBu.sub.2Cp)(NMe.sub.2).sub.3, Hf(MeCp)(NMe.sub.2).sub.3, Hf(EtCp)(NMe.sub.2).sub.3, HfCp(NMe.sub.2).sub.3, Hf(MeCp)(NEtMe).sub.3, Hf(EtCp)(NEtMe).sub.3, HfCp(NEtMe).sub.3, Hf(MeCp)(NEt.sub.2).sub.3, Hf(EtCp)(NEt.sub.2).sub.3, HfCp(NEt.sub.2).sub.3, Hf(iPr.sub.2Cp)(NMe.sub.2).sub.3, Hf(tBu.sub.2Cp)(NMe.sub.2).sub.3, and mixtures thereof; and depositing the dielectric film on the substrate.

In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

In fabricating a memory device, a first electrode is provided. An oxide layer is provided on the first electrode. A second electrode is provided on the oxide layer. In a further method of fabricating a memory device, a first electrode is provided. An oxide layer is provided on the first electrode, the oxide layer comprising an oxygen deficiency and/or defects therein. A second electrode is then provided on the oxide layer.

In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.