A deposition method demonstrating a slower growth rate is disclosed. Some embodiments of the disclosure provide CVD methods which utilize a halide-containing growth inhibitor as a co-reactant with a metal halide precursor and a reactant. Some embodiments of the disclosure relate to CVD and ALD methods comprising exposure of the substrate surface to a pretreatment comprising a halide-containing growth inhibitor.

Methods of forming a tungsten film comprising forming a boron seed layer on an oxide surface, an optional tungsten initiation layer on the boron seed layer and a tungsten containing film on the boron seed layer or tungsten initiation layer are described. Film stack comprising a boron seed layer on an oxide surface with an optional tungsten initiation layer and a tungsten containing film are also described.

Contacting a multiplicity of seed crystals with an amorphous metallic alloy layer to form an amorphous precursor film or depositing an amorphous precursor film on a substrate and annealing the amorphous precursor film at a temperature between 50° C. and 400° C. to yield the metallic film with grains separated by grain boundaries.

A method for fabricating a semiconductor device includes forming a stack structure including a horizontal recess over a substrate, forming a blocking layer lining the horizontal recess, forming an interface control layer including a dielectric barrier element and a conductive barrier element over the blocking layer, and forming a conductive layer over the interface control layer to fill the horizontal recess.

The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

Provided herein are methods for forming a layer on a substrate wherein the layer is formed selectively on a first region of the substrate relative to a second region having a composition different than the first region. Methods of the invention include selectively forming a layer using an inhibitor agent capable of reducing the average acidity of a first region of the substrate having a composition characterized by a plurality of hydroxyl groups. Methods of the invention include selectively forming a layer by exposure of the substrate to: (i) an inhibitor agent comprising a substituted or an unsubstituted amine group, a substituted or an unsubstituted pyridyl group, a carbonyl group, or a combination of these, and (ii) a precursor gas comprising one or more ligands selected from the group consisting of a carbonyl group, an allyl group, combination thereof.

A method of forming a titanium nitride film includes: forming the titanium nitride film by alternately repeating supplying a raw material gas, which contains a titanium compound including chlorine and titanium, to a substrate accommodated in a processing container, and supplying a reaction gas, which contains a nitrogen compound including nitrogen and reacts with the titanium compound to form titanium nitride, to the substrate, wherein the forming the titanium nitride film is executed under a condition in which a pressure in the processing container is set within a range of 2.7 kPa to 12.6 kPa so that a specific resistance of the titanium nitride film becomes 57 micro-ohm-cm or less.

A method of processing a substrate includes: (a) preparing a substrate having a nitrogen-containing film and an oxygen-containing film on a surface of the substrate; and (b) modifying a surface of the nitrogen-containing film to be nitrided by supplying an active species containing nitrogen and an active species containing hydrogen, or selectively forming hydroxyl group termination on a surface of the oxygen-containing film by supplying at least one selected from the group of an active species containing hydrogen, an active species containing hydrogen and oxygen, and an active species containing hydrogen and nitrogen.

A film formation method according to one aspect of the present disclosure includes: a first step of irradiating a substrate, on which a recess is formed, with an electron beam; a second step of supplying a raw material gas to the substrate and allowing the raw material gas to be adsorbed on a bottom surface of the recess; and a third step of supplying hydrogen radicals to the substrate and allowing the raw material gas adsorbed on the bottom surface of the recess to react with the hydrogen radicals.

A semiconductor device according to an embodiment includes an oxide film containing first element and a conductive film provided to be in contact with the oxide film, containing metal element and oxygen element, and having conductivity. A range of a volume density of the oxygen element in the conductive film is different between cases where the metal element are tungsten (W), molybdenum (Mo), titanium (Ti), chromium (Cr), vanadium (V), iron (Fe), copper (Cu), tantalum (Ta), or niobium (Nb).