A miniaturized transistor, a transistor with low parasitic capacitance, a transistor with high frequency characteristics, or a semiconductor device including the transistor is provided. The semiconductor device includes a first insulator, an oxide semiconductor over the first insulator, a first conductor and a second conductor that are in contact with the oxide semiconductor, a second insulator that is over the first and second conductors and has an opening reaching the oxide semiconductor, a third insulator over the oxide semiconductor and the second insulator, and a fourth conductor over the third insulator. The first conductor includes a first region and a second region. The second conductor includes a third region and a fourth region. The second region faces the third region with the first conductor and the first insulator interposed therebetween. The second region is thinner than the first region. The third region is thinner than the fourth region.

A miniaturized transistor, a transistor with low parasitic capacitance, a transistor with high frequency characteristics, or a semiconductor device including the transistor is provided. The semiconductor device includes a first insulator, an oxide semiconductor over the first insulator, a first conductor and a second conductor that are in contact with the oxide semiconductor, a second insulator that is over the first and second conductors and has an opening reaching the oxide semiconductor, a third insulator over the oxide semiconductor and the second insulator, and a fourth conductor over the third insulator. The first conductor includes a first region and a second region. The second conductor includes a third region and a fourth region. The second region faces the third region with the first conductor and the first insulator interposed therebetween. The second region is thinner than the first region. The third region is thinner than the fourth region.

A substrate treating apparatus is disclosed. The substrate treating apparatus includes a treating container having a treatment space to treat a substrate, a standby port positioned at one side of the treating container to allow a nozzle, which discharges a treatment liquid, to stand by, and a liquid supplying unit moving between the treating container and the standby port and having the nozzle. The standby port includes a nozzle receiving member including a nozzle receiving unit having a receiving space formed inside the nozzle receiving unit to receive the nozzle and a cleaning liquid and a discharge part having a discharge port provided at one side of the nozzle cleaning unit to discharge the cleaning liquid to the nozzle. The discharge port is provided to overlap at least a portion of the nozzle when viewed from above.

A substrate treating apparatus is disclosed. The substrate treating apparatus includes a treating container having a treatment space to treat a substrate, a standby port positioned at one side of the treating container to allow a nozzle, which discharges a treatment liquid, to stand by, and a liquid supplying unit moving between the treating container and the standby port and having the nozzle. The standby port includes a nozzle receiving member including a nozzle receiving unit having a receiving space formed inside the nozzle receiving unit to receive the nozzle and a cleaning liquid and a discharge part having a discharge port provided at one side of the nozzle cleaning unit to discharge the cleaning liquid to the nozzle. The discharge port is provided to overlap at least a portion of the nozzle when viewed from above.

The examples of the present application disclose a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a functional structure and a first mark structure located on a substrate, in which the functional structure and the first mark structure have the same feature size; and a first dielectric layer located at the functional structure and the first mark structure, in which a thickness of the first dielectric layer at the functional structure is different from a thickness of the first dielectric layer at the first mark structure. The examples of the present application can improve the alignment accuracy of the manufacturing process and improve the product yield and production efficiency at the same time.

A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: ##STR00001##
wherein, in Chemical Formula 1, R.sup.1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R.sup.2 to R.sup.4 are each independently selected from —OR.sup.a and —OC(═O)R.sup.b. The semiconductor resist composition may have excellent solubility and storage stability.

A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: ##STR00001##
wherein, in Chemical Formula 1, R.sup.1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R.sup.2 to R.sup.4 are each independently selected from —OR.sup.a and —OC(═O)R.sup.b. The semiconductor resist composition may have excellent solubility and storage stability.

Embodiments described herein are directed to a thin film capacitor (TFC) for power delivery that is in situ in a package substrate and techniques of fabricating the TFC. In one example, the TFC includes a first electrode, a dielectric layer over the first electrode, and a second electrode over the dielectric layer. Each of the dielectric layer and the second electrode comprises an opening. Furthermore, the two openings are positioned over one another such that the openings expose a surface of the first electrode. In this example, a first vertical interconnect access (via) is positioned on the exposed surface of the first electrode and a second via is positioned on an exposed surface of the second electrode. The TFC can be positioned in or on a layer of the package substrate close to a component (e.g., a die, a die stack, etc.) on the package substrate that may require a decoupling capacitance.

Embodiments described herein are directed to a thin film capacitor (TFC) for power delivery that is in situ in a package substrate and techniques of fabricating the TFC. In one example, the TFC includes a first electrode, a dielectric layer over the first electrode, and a second electrode over the dielectric layer. Each of the dielectric layer and the second electrode comprises an opening. Furthermore, the two openings are positioned over one another such that the openings expose a surface of the first electrode. In this example, a first vertical interconnect access (via) is positioned on the exposed surface of the first electrode and a second via is positioned on an exposed surface of the second electrode. The TFC can be positioned in or on a layer of the package substrate close to a component (e.g., a die, a die stack, etc.) on the package substrate that may require a decoupling capacitance.

A photoresist developer includes a solvent having Hansen solubility parameters of 15<δ.sub.d<25, 10<δ.sub.p<25, and 6<δ.sub.p<30; an acid having an acid dissociation constant, pKa, of −15<pKa<4, or a base having a pKa of 40>pKa>9.5; and a chelate.