A semiconductor package structure includes a dielectric structure defining a plurality of through holes, wherein each of the through holes includes a first portion defined by a first sidewall portion and a second portion defined by a second sidewall portion substantially coplanar with the first sidewall portion. The semiconductor package structure further includes a redistribution layer structure disposed on a first surface of the dielectric structure, including a plurality of conductive pads and a plurality of first conductive traces, wherein each of the conductive pads is disposed in a respective through hole, and a sidewall of the conductive pad contacts the first sidewall portion of the through hole, a semiconductor die electrically connected to the redistribution layer structure, and a plurality of conductive structures each disposed on a respective one of the conductive pads and disposed in the second portion of the through hole, wherein a sidewall of the conductive structure and the second sidewall portion of the through hole define a gap.

A substrate carrier with contacts is described that is balanced for thermal stress. In one example workpiece carrier has a rigid substrate configured to support a workpiece to be carried for processing, a first dielectric layer over the substrate, an electrostatic conductive electrode over the first dielectric layer to electrostatically hold the workpiece to be carried, a second dielectric layer over the electrode to electrically isolate the workpiece from the electrode, and a third dielectric layer under the substrate to counter thermal stress applied to the substrate by the first and second dielectric layers.

A chip package structure includes a redistribution layer, at least one chip, a reinforcing frame, an encapsulant and a plurality of solder balls. The redistribution layer includes a first surface and a second surface opposite to each other. The chip is disposed on the first surface and electrically connected to the redistribution layer. The reinforcing frame is disposed on the first surface and includes at least one through cavity. The chip is disposed in the through cavity and a stiffness of the reinforcing frame is greater than a stiffness of the redistribution layer. The encapsulant encapsulates the chip, the reinforcing frame and covering the first surface. The solder balls are disposed on the second surface and electrically connected to the redistribution layer.

A chip package structure includes a substrate, a chip, an encapsulant, a plurality of solder balls and a patterned metal layer. The substrate includes a first surface and a second surface opposite to each other. The chip is disposed on the first surface and electrically connected to the substrate. The encapsulant encapsulates the chip and covering the first surface. The solder balls are disposed on the second surface and electrically connected to the substrate. The patterned metal layer s disposed on the encapsulant. The patterned metal layer includes at least one concave portion and at least one convex portion defined by the concave portion. The convex portion faces the encapsulant. The adhesion layer is disposed between the patterned metal layer and the encapsulant. The adhesion layer is filled in the concave portion.

A method includes attaching a semiconductor structure on a carrier, depositing a molding compound layer over the carrier, wherein the semiconductor structure is embedded in the molding compound layer, exposing a first photo-sensitive material layer and a second photo-sensitive material layer to light, developing the first photo-sensitive material layer and the second photo-sensitive material layer to form an opening having a first portion in the first photo-sensitive material layer and a second portion in the second photo-sensitive material layer, wherein a width of the second portion is greater than a width of the first portion, filling the opening with a conductive material to form a via in the first photo-sensitive material layer and a redistribution layer in the second photo-sensitive material layer and forming a bump over the redistribution layer.

A Fin-FET device and its fabrication method are provided. The method for fabricating the Fin-FET device includes forming a plurality of fin structures on a substrate, forming an isolation film on the substrate between neighboring fin structures, removing a portion of the isolation film to form an initial isolation layer with a top surface of the initial isolation layer lower than top surfaces of the fin structures, and implanting doping ions into the initial isolation layer. Further, the method also includes removing a portion of the initial isolation layer to form an isolation layer.

A method includes attaching a semiconductor structure on a carrier, depositing a molding compound layer over the carrier, wherein the semiconductor structure is embedded in the molding compound layer, exposing a first photo-sensitive material layer and a second photo-sensitive material layer to light, developing the first photo-sensitive material layer and the second photo-sensitive material layer to form an opening having a first portion in the first photo-sensitive material layer and a second portion in the second photo-sensitive material layer, wherein a width of the second portion is greater than a width of the first portion, filling the opening with a conductive material to form a via in the first photo-sensitive material layer and a redistribution layer in the second photo-sensitive material layer and forming a bump over the redistribution layer.

Various multi-die arrangements and methods of manufacturing the same are disclosed. In some embodiments, a method of manufacture includes a face-to-face process in which a first GPU chiplet and a second GPU chiplet are bonded to a temporary carrier wafer. A face surface of an active bridge chiplet is bonded to a face surface of the first and second GPU chiplets before mounting the GPU chiplets to a carrier substrate. In other embodiments, a method of manufacture includes a face-to-back process in which a face surface of an active bridge chiplet is bonded to a back surface of the first and second GPU chiplets.

A molded interconnecting substrate has an embedded redistribution layer (RDL), an embossed RDL, a plurality of conductive pillars encapsulated in a molding core, and a chip also encapsulated in the molded core. The conductive pillars are disposed on the external pads of the embedded RDL. The chip is die-bonded onto the embedded RDL. The molding core has an external surface and an opposing component-installing surface. The embedded RDL is embedded in the molding core from the external surface. The bottom surface of the embedded RDL is coplanar to the external surface and the pillar-top surfaces of the conductive pillars are coplanar to the component-installing surface. The embossed RDL is disposed on and extruded from the component-installing surface including a plurality of pillar-top pads aligned and bonded to the pillar-top surfaces. Accordingly, it is possible to eliminate a flip-chip molding thickness without manufacture of substrate plating lines where fine-pitch substrate circuitry can be achieved without substrate drilling process.

A semiconductor package and a method of forming a semiconductor package with one or more dies over an interposer are provided. In some embodiments, the semiconductor package has a plurality of through substrate vias (TSVs) extending through an interposer substrate. A redistribution structure is arranged over a first surface of the interposer substrate, and a first die is bonded to the redistribution structure. An edge of the first die is beyond a nearest edge of the interposer substrate. A second die is bonded to the redistribution structure. The second die is laterally separated from the first die by a space.