Disclosed is a method for constructing a micro-LED display module. The method includes: retaining micro-LED chips in a matrix on a chip retaining member; picking up the micro-LED chips on the chip retaining member and transferring the picked up micro-LED chips to a planar carrier member; pressing the micro-LED chips on the planar carrier member against a mount substrate; and heating solders disposed on the mount substrate above the melting point of the solders simultaneously with the pressing of the micro-LED chips against the mount substrate to bond the micro-LED chips to the mount substrate. The mount substrate is sucked by a suction chuck during heating of the solders.

A semiconductor die is bonded using epoxy onto a substrate supported on a heating platform. After preheating the substrate with the heating platform to a temperature of between 25 C. and 60 C., an epoxy dispenser deposits an epoxy dot onto the substrate before the semiconductor die is placed onto the epoxy dot with a pick head to thereby bond the semiconductor die onto the substrate.

A method of forming a semiconductor device includes applying an adhesive material in a first region of an upper surface of a substrate, where applying the adhesive material includes: applying a first adhesive material at first locations of the first region; and applying a second adhesive material at second locations of the first region, the second adhesive material having a different material composition from the first adhesive material. The method further includes attaching a ring to the upper surface of the substrate using the adhesive material applied on the upper surface of the substrate, where the adhesive material is between the ring and the substrate after the ring is attached.

Methods/structures of joining package structures are described. Those methods/structures may include forming a metal formate on a surface of a first solder interconnect structure disposed on a first package substrate at a first temperature, and attaching a second solder interconnect structure disposed on a second package substrate to the first solder interconnect structure at a second temperature. The second temperature decomposes at least a portion of the metal formate and generates a hydrogen gas. The generated hydrogen gas removes an oxide from the second solder interconnect structure during joint formation at the second temperature.

In a described example, an apparatus includes: a package substrate having a planar die mount surface; recesses extending into the planar die mount surface; and a semiconductor device die flip chip mounted to the package substrate on the planar die mount surface, the semiconductor device die having post connects having proximate ends on bond pads on an active surface of the semiconductor device die, and extending to distal ends away from the semiconductor device die having solder bumps, wherein the solder bumps form solder joints to the package substrate within the recesses.

In a described example, an apparatus includes: a package substrate having a planar die mount surface; recesses extending into the planar die mount surface; and a semiconductor device die flip chip mounted to the package substrate on the planar die mount surface, the semiconductor device die having post connects having proximate ends on bond pads on an active surface of the semiconductor device die, and extending to distal ends away from the semiconductor device die having solder bumps, wherein the solder bumps form solder joints to the package substrate within the recesses.

Methods/structures of joining package structures are described. Those methods/structures may include forming a metal formate on a surface of a first solder interconnect structure disposed on a first package substrate at a first temperature, and attaching a second solder interconnect structure disposed on a second package substrate to the first solder interconnect structure at a second temperature. The second temperature decomposes at least a portion of the metal formate and generates a hydrogen gas. The generated hydrogen gas removes an oxide from the second solder interconnect structure during joint formation at the second temperature.

A method of forming a semiconductor device includes applying an adhesive material in a first region of an upper surface of a substrate, where applying the adhesive material includes: applying a first adhesive material at first locations of the first region; and applying a second adhesive material at second locations of the first region, the second adhesive material having a different material composition from the first adhesive material. The method further includes attaching a ring to the upper surface of the substrate using the adhesive material applied on the upper surface of the substrate, where the adhesive material is between the ring and the substrate after the ring is attached.

A semiconductor assembly including: a first semiconductor having a plurality of electrical contacts extending from an upper surface of the first semiconductor; a second semiconductor adjacent to the first semiconductor; and a mesh disposed between and affixed to the upper surface of the first semiconductor and the lower surface of the second semiconductor. A lower surface of the second semiconductor is electrically connected to the first semiconductor via the plurality of electrical contacts. The mesh comprises a plurality of interconnecting struts defining a plurality of openings, wherein the plurality of openings is configured to receive the plurality of electrical contacts.

An electronic component module includes a substrate including a first main surface and a second main surface, and using a side near the second main surface as a mounting side, an external terminal by a solder ball made of first solder, on the second main surface, and a first electronic component mounted by using second solder, on the first main surface, and a melting point of the first solder is higher than a melting point of the second solder.