Advanced flat metals for microelectronics are provided. While conventional processes create large damascene features that have a dishing defect that causes failure in bonded devices, example systems and methods described herein create large damascene features that are planar. In an implementation, an annealing process creates large grains or large metallic crystals of copper in large damascene cavities, while a thinner layer of copper over the field of a substrate anneals into smaller grains of copper. The large grains of copper in the damascene cavities resist dishing defects during chemical-mechanical planarization (CMP), resulting in very flat damascene features. In an implementation, layers of resist and layers of a second coating material may be applied in various ways to resist dishing during chemical-mechanical planarization (CMP), resulting in very flat damascene features.

An electronic circuit includes a first packaged semiconductor device having a first semiconductor die including a first terminal, a first electrically conductive lead that is electrically connected to the first terminal, and a first electrically insulating mold compound that encapsulates the first semiconductor die and exposes an end portion of the first lead at an outer surface of the first mold compound. A conductive track is formed in the outer surface of the first mold compound.

The present disclosure relates to a shielded electronic module, which includes a module substrate, an electronic component attached to a top surface of the module substrate and encapsulated by a first mold compound, a second mold compound over a bottom surface of the module substrate, and a shielding structure. The second mold compound includes a recess extending inwardly from a bottom periphery of the second mold compound. The shielding structure completely covers a top surface of the module and extends over the side surface of the module until reaching the recess. Herein, the shielding structure is electrically grounded.

A structure for a semiconductor device includes a dielectric layer and a metal layer. The structure also includes a plurality of unit cells. Each unit cell is formed of interconnected segments. The plurality of unit cells forms a lattice. The lattice is between the dielectric layer and the metal layer.

The present disclosure relates to a shielded electronic module, which includes a module substrate, an electronic component attached to a top surface of the module substrate and encapsulated by a first mold compound, a second mold compound over a bottom surface of the module substrate, and a shielding structure. The second mold compound includes a recess extending inwardly from a bottom periphery of the second mold compound. The shielding structure completely covers a top surface of the module and extends over the side surface of the module until reaching the recess. Herein, the shielding structure is electrically grounded.

A method for manufacturing a semiconductor device includes forming a plurality of trenches in a dielectric layer, wherein the plurality of trenches each comprise a rounded surface, depositing a liner layer on the rounded surface of each of plurality of trenches, and depositing a conductive layer on the liner layer in each of the plurality of trenches, wherein the conductive layer and the liner layer form a plurality of interconnects, and each of the plurality of interconnects has a cylindrical shape.

Embodiments include devices and methods, including a device including a substrate comprising a semiconductor, the substrate including a front side comprising active elements and a backside opposite the front side. The device includes a dielectric layer on the backside, and a passive component on the dielectric layer on the backside. In certain embodiments, the passive device is formed on a self-assembled monolayer (SAM). Other embodiments are described and claimed.

The present disclosure provides a semiconductor substrate, including a first patterned conductive layer, a dielectric structure on the first patterned conductive layer, wherein the dielectric structure having a side surface, a second patterned conductive layer on the dielectric structure and extending on the side surface, and a third patterned conductive layer on the second patterned conductive layer and extending on the side surface. The present disclosure provides a semiconductor package including the semiconductor substrate. A method for manufacturing the semiconductor substrate and the semiconductor package is also provided.

A metal wiring layer can be formed within a recess of a substrate and an unnecessary plating layer is not left on a surface of the substrate. A metal wiring layer forming method includes forming a first plating layer 7 as a protection layer at least on a tungsten or tungsten alloy 4 formed on a bottom surface 3a of a recess 3 of a substrate 2; removing an unnecessary plating layer 7a formed on a surface 2a of the substrate 2; and forming a second plating layer 8 on the first plating layer 7 within the recess 3.

Graphene oxide is used as an insulation barrier layer for metal deposition. After patterning and modification, the chemical characteristics of graphene oxide are induced. It can be used as the catalyst for electroless plating in the metallization process, so that the metal is only deposited on the patterned area. It provides the advantages of improving reliability and yield. The metallization structure includes a substrate, a graphene oxide catalytic layer, and a metal layer. It may be widely applied to the metallization of the fine pitch metal of a semiconductor package as well as the fine pitch wires of a printed circuit board (PCB), touch panels, displays, fine electrodes of solar cells, and so on.