H01L23/49555

Microelectronic device with floating pads
11538743 · 2022-12-27 · ·

A microelectronic device has a first die attached to a first die pad, and a second die attached to a second die pad. A magnetically permeable member is attached to a first coupler pad and a second coupler pad. A coupler component is attached to the magnetically permeable member. The first die pad, the second die pad, the first coupler pad, the second coupler pad, and the magnetically permeable member are electrically conductive. The first coupler pad is electrically isolated from the first die, from the second coupler pad, and from external leads of the microelectronic device. The second coupler pad is electrically isolated from the first die and from the external leads. The first die and the second die are electrically coupled to the coupler component. A package structure contains at least portions of the components of the microelectronic device and extends to the external leads.

Isolated transformer with integrated shield topology for reduced EMI

A packaged electronic device includes first conductive leads and second conductive leads at least partially exposed to an exterior of a package structure, and a multilevel lamination structure in the package structure. The multilevel lamination structure includes a first patterned conductive feature having multiple turns in a first level to form a first winding coupled to at least one of the first conductive leads in a first circuit, a second patterned conductive feature having multiple turns in a different level to form a second winding coupled to at least one of the second conductive leads in a second circuit isolated from the first circuit, and a conductive shield trace having multiple turns in a second level spaced apart from and between the first patterned conductive feature and the second patterned conductive feature, the conductive shield trace coupled in the first circuit.

Leads for semiconductor package

A semiconductor package includes a first lead with first and second ends extending in the same direction as one another. At least one second lead has first and second ends and is partially surrounded by the first lead. A die pad is provided and a die is connected to the die pad. Wires electrically connect the die to the first lead and the at least one second lead. An insulating layer extends over the leads, the die pad, and the die such that the first end of the at least one second lead is exposed from the semiconductor package and the second end of the first lead is encapsulated entirely within the insulating layer.

INTELLIGENT POWER MODULE
20220406693 · 2022-12-22 ·

An intelligent power module includes: an encapsulating material structure; a lead frame which is at least partially encapsulated inside the encapsulating material structure, wherein all portions of the lead frame encapsulated inside the encapsulating material structure are at a same planar level; and a heat dissipation structure, which is connected to the lead frame.

IN-LINE POWER DEVICE, SEMICONDUCTOR ASSEMBLY, IN-WHEEL MOTOR DRIVER OR VEHICLE DRIVER AND NEW-ENERGY VEHICLE
20220399252 · 2022-12-15 ·

An in-line power device, a semiconductor assembly, an in-wheel motor driver or a vehicle driver, and a new-energy vehicle are provided. The in-line power device includes: a body including a power chip and a wrapping layer wrapping an outer surface of the power chip; and a plurality of pins provided at a first side of the body at intervals. The plurality of pins includes a power pin, an auxiliary control pin and a control signal pin, and each pin includes a first segment provided inside the wrapping layer and a second segment provided outside the wrapping layer. The second segment of the auxiliary control pin and the second segment of the control signal pin are located in a first plane, the second segment of the power pin and the first side are located in a second plane, and the first plane is not parallel to the second plane.

SEMICONDUCTOR DEVICE, PRINTED CIRCUIT BOARD (PCB), AND METHOD OF INTERFACING CONTROL PIN (GATE PIN) OF A POWER SEMICONDUCTOR DEVICE (MOSFET) TO A PRINTED CIRCUIT BOARD (PCB) IN A BATTERY MANAGEMENT SYSTEM (BMS)
20220399256 · 2022-12-15 · ·

Provided is a MOSFET device for use with a printed circuit board (PCB) of a battery management system (BMS), the device including a semiconductor body; a metal conductor extending outwardly from a side of the semiconductor body; a plurality of power pins extending outwardly from at least one side of the semiconductor body, the power pins having tips bent downwardly; a gate pin extending outwardly from at least one side of the semiconductor body, wherein the tip of the gate pin is raised or elevated relative to the tips of the power pins so as to avoid electrical contact with the one of the spaced apart copper plates, and wherein the tip of the gate pin is connected to a circuit of the battery management system (BMS).

Semiconductor device and method of manufacturing the semiconductor device

A semiconductor device is a substrate inserted lead-type semiconductor device to be mounted through insertion of a plurality of lead terminals into a plurality of respective through holes of a substrate. The semiconductor device includes: an energization controller including a semiconductor element and wiring; a sealing resin to cover the energization controller; and the lead terminals each having one end side connected to the energization controller and the other end side protruding from the sealing resin. The lead terminals each have a protrusion formed on a part of the other end side protruding from the sealing resin.

Current sensor integrated circuits

A current sensor integrated circuit (IC) includes a unitary lead frame having at least one first lead having a terminal end, at least one second lead having a terminal end, and a paddle having a first surface and a second opposing surface. A semiconductor die is supported by the first surface of the paddle, wherein the at least one first lead is electrically coupled to the semiconductor die and the at least one second lead is electrically isolated from the semiconductor die. The current sensor IC further includes a first mold material configured to enclose the semiconductor die and the paddle and a second mold material configured to enclose at least a portion of the first mold material, wherein the terminal end of the at least one first lead and the terminal end of the at least one second lead are external to the second mold material.

LEAD FRAMES FOR SEMICONDUCTOR PACKAGES WITH INCREASED RELIABILITY AND RELATED MICROELECTRONIC DEVICE PACKAGES AND METHODS
20220384316 · 2022-12-01 ·

Lead frames for semiconductor device packages may include lead fingers proximate to a die-attach pad. A convex corner of the lead frame proximate to a geometric center of the lead frame may be rounded to include a radius of curvature of at least two times a greatest thickness of the die-attach pad. The thickness of the die-attach pad may be measured in a direction perpendicular to a major surface of the die-attach pad. A shortest distance between the die-attach pad and each one of the lead fingers having a surface area larger than an average surface area of the lead fingers may be at least two times the greatest thickness of the die-attach pad.

INTERDIGITATED OUTWARD AND INWARD BENT LEADS FOR PACKAGED ELECTRONIC DEVICE

An electronic device includes a package structure, a first lead and a second lead. The first lead has a first portion extending outward from a side of the package structure and downward, and a second portion extending outward from the first portion away from the package side. The second lead has a first portion extending outward from the package side and downward, and a second portion extending inward from the first portion toward the package side, and a distal end of the second lead is spaced from the package side.