An electrostatic protection structure able to discharge static electricity of either polarity from a functional circuit including signal lines includes a discharge electrode and a plurality of electrostatic protection units electrically coupled to the discharge electrode. Each electrostatic protection unit includes a first TFT and a second TFT. The first TFT includes first gate, source, and drain, the second TFT includes second gate, source, and drain. The first gate and the first drain are electrically connected to one signal line. The first source is electrically connected to the second drain, the first drain is electrically connected to the second source, the second gate is electrically connected to the discharge electrode, and the second gate is electrically connected to the second drain.

The method for manufacturing an integrated circuit includes: obtaining measurement data according to a first group of overlay marks on a first wafer, where the first group of overlay marks are disposed in a first region on the first wafer; obtaining a first parameter set according to a first model and the measurement data; and projecting the first parameter set into a second region on a second wafer to obtain simulated compensation data, where the second region includes a second group of overlay marks whose quantity is greater than that of the first group of overlay marks.

A semiconductor device includes a first power semiconductor device, a first Nch MOSFET whose drain is coupled to a gate of the first power semiconductor device, a first gate resistor coupled to a source of the first Nch MOSFET and a first diode coupled between the source and drain of the first Nch MOSFET.

An ESD protection circuit is connected between a V.sub.DD terminal and a Vss terminal and is connected in parallel with an internal circuit which operates at an operating voltage and is damaged at a damage voltage or higher to protect the internal circuit from electrostatic discharge. The ESD protection circuit includes ESD protection elements connected in series. The ESD protection elements are transistors, diode elements, or a combination thereof. A sum of current-voltage characteristics of the ESD protection elements at a voltage higher than the operating voltage is higher than the operating voltage and lower than the damage voltage, until reaching a discharge current value or higher capable of protecting the internal circuit.

An electrostatic discharge (ESD) protection device includes a pad, a diode, a gate ground NMOS (GGNMOS) transistor and a thyristor. The diode includes an anode connected with the pad. The GGNMOS transistor is connected between a cathode of the diode and a ground terminal. The thyristor is formed between the diode and the ground terminal when an ESD current may flow from the pad.

Described examples include an integrated circuit includes a protected node and a first transistor having a source coupled to the protected node, a gate and a drain coupled to a ground, wherein the first transistor is a MOSFET transistor. The integrated circuit also includes a second transistor having a first current handling terminal coupled to the protected node, a second current handling terminal coupled to the ground and a control terminal coupled to a reference potential, where the second transistor is configured to be off when a first voltage on the control terminal of the second transistor is less than a second voltage on the first current handling terminal of the second transistor.

An automated system and method of determining power sequencing risks (e.g. power-up, power-down time sequences) for complex computer circuits with multiple independent power supplies. The system operates by logical consideration of the topological arrangement of MOSFETs and other devices in standard netlists. The system inspects the various devices and automatically traces DC circuit paths to DC power rails. The system then evaluates, as a type of logical existence proof, and on a per MOSFET device level, if due to assignment to different DC power levels, various factors, such as forward-biased diodes, floating MOSFET gate, and other risk factors could ever occur. The system generates comprehensive records of such risks and can output an overall analysis of a circuit reporting on both problematic power sequences, as well as circuit design factors that may be sub-optimal from a power sequence perspective.

A semiconductor device including a first line configured to receive a power supply voltage, a second line configured to be coupled to a load of the semiconductor device, first and second metal-oxide-semiconductor (MOS) transistors coupled in series between the first line and the second line, each of the first and second MOS transistors having a drain electrode and a gate electrode, the drain electrode of the first MOS transistor being coupled to the drain electrode of the second MOS transistor, a third line coupled to the gate electrode of the first MOS transistor, and a fourth line coupled to the gate electrode of the second MOS transistor, the third and fourth lines being electrically separated from each other.

An electrostatic discharge protection device is formed using only electrically connected transistors. The transistors include: a first MOS-type transistor forming a clamping circuit coupled between first and second supply nodes; a second MOS-type transistor coupled between the first supply node and a gate terminal of the first MOS-type transistor; and a third MOS-type transistor having a first gate terminal coupled to a gate terminal of the second MOS-type transistor, a second gate terminal coupled to one of the first and second supply nodes, and first and second conduction terminals coupled to the second supply node.

An ESD protection circuit includes a buffer circuit, a driving circuit, and a power-clamping circuit. The buffer circuit includes first and second transistors having a first conductivity type coupled in a cascade configuration between a first node and a first power supply node. A bonding pad is coupled to the first node. The drive circuit determines a state of at least one of the first and second transistors according to a control voltage. The drive circuit includes a third transistor having a second conductivity type, which is coupled between a second power supply node and a gate of the first transistor and is controlled by the control signal. The power-clamping circuit is coupled to the bonding pad and a gate of the third transistor at a second node. The control voltage is generated at the second node and determined by a voltage at the bonding pad.