A pixel includes a workpiece having a protrusion and a bulk, wherein the protrusion is above the bulk. The pixel further includes a protrusion doping region in the protrusion. The pixel further includes an isolation structure in the protrusion, wherein the isolation structure surrounds the protrusion doping region. The pixel further includes a photosensitive device, wherein the photosensitive device is in the bulk and the protrusion.

An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.

A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including a plurality of unit patterns for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the plurality of unit patterns and read touch coordinates as a result of the scanning.

A back side illuminated image sensor includes a pixel formed by three doped photosensitive regions that are superposed vertically in a semiconductor substrate. Each photosensitive region is laterally framed by a respective vertical annular gate. The vertical annular gates are biased by a control circuit during an integration phase so as to generate an electrostatic potential comprising potential wells in the central portion of the volume of each doped photosensitive region and a potential barrier at each interface between two neighboring doped photosensitive regions.

A solid-state imaging device includes a first pixel and a second pixel. The first pixel includes a light-shielding part having an opening of a predetermined size. The second pixel includes a light-shielding part having an opening of the predetermined size at a position different from a position of the opening of the first pixel.

A fingerprint detection array substrate is provided. The fingerprint detection array substrate includes a plurality of touch electrode blocks in a plurality of touch detection regions configured to detect a touch position, wherein touch electrode blocks in a respective one of the plurality of touch detection regions are inter-connected through bridges, forming a touch electrode unit, and the touch electrode unit is isolated from touch electrode blocks in adjacent touch detection regions of the plurality of touch detection regions; a plurality of touch signal lines configured to respectively transmit touch signals to a plurality of touch detection regions, wherein a respective one of the plurality of touch signal lines is electrically connected to the touch electrode unit limited in the respective one of the plurality of touch detection regions; and a fingerprint sensor configured to perform fingerprint sensing limited in a fingerprint scanning region.

The re is provided a fingerprint identification module, including a substrate having a fingerprint identification area and a peripheral area; a photoelectric sensing structure in the fingerprint identification area, and including pixel units; each pixel unit includes a thin film transistor having a gate electrode coupled to a corresponding gate line and a first electrode coupIed to a corresponding signal sensing line; the fingerprint identification area includes a photosensitive region, the pixel unit in the photosensitive region further includes a photoelectric sensor including a third electrode, a photosensitive pattern and a fourth electrode which are sequentially stacked along a direction away from the substrate, and the third electrode is coupled to a second electrode of the thin film transistor in the same pixel unit as that where the photoelectric sensor is located; an area ratio of the photoelectric sensor to the pixel unit corresponding thereto ranges from 40% to 90%.

The present technology relates to a solid-state imaging device and an electronic apparatus that perform a stable overflow from a photodiode and prevent Qs from decreasing and color mixing from occurring. A solid-state imaging device according to an aspect of the present technology includes, at a light receiving surface side of a semiconductor substrate, a charge retention part that generates and retains a charge in response to incident light, an OFD into which the charge saturated at the charge retention part is discharged, and a potential barrier that becomes a barrier of the charge that flows from the charge retention part to the OFD, the OFD including a low concentration OFD and a high concentration OFD having different impurity concentrations of the same type, and the high concentration OFD and the potential barrier being formed at a distance. For example, the present technology is applicable to a CMOS image sensor.

A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate, a source, and a drain. The second semiconductor region has a top surface that is positioned toward the gate insulation layer and a bottom surface that is positioned opposite to the top surface of the second semiconductor region. The second semiconductor region has an upper portion that includes the top surface of the second semiconductor region and a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion. The first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region.

An optical sensor device comprising a conversion region to convert an electromagnetic signal into photo-generated charge carriers is shown. The optical sensor device comprises a read-out node configured to read-out the photo-generated charge carriers and a control electrode which is separated by an isolating material from the conversion region. Furthermore, the optical sensor device comprises a doping region in the semiconductor substrate between the control electrode and the conversion region, wherein the doping region comprises a higher doping concentration compared to a minimum doping concentration of the conversion region, wherein the doping concentration is at least 1000 times higher than the minimum doping concentration of the conversion region and wherein the doping region extends into the semiconductor substrate. Moreover, a projection of the control electrode towards the conversion region overlaps the doping region or is located in the doping region. Embodiments show the optical sensor device as a time-of-flight sensor.