There is provided an image sensor having a plurality of pixels, each pixel including a light receiving portion configured to receive incident light, a waveguide configured to guide the incident light from a light incident surface to the light receiving portion, and a light shielding portion disposed between the light incident surface and the light receiving portion, for blocking the incident light. The light shielding portion has an opening formed near a light emitting surface of the waveguide. The light receiving portion receives the incident light passing through the waveguide and the opening. A width of a core of the waveguide and a width of the opening are set so that the widths increase as a wavelength of the light incident on a pixel becomes longer.

This solid-state imaging device 100 has: a photosensitive part that includes pixel portions 211, which are disposed in a matrix, and charge transfer parts 212 for transferring, by the column, the signal charge of the pixel portions; a plurality of charge storage parts 220 that accumulate the signal charges transferred by the plurality of charge transfer parts of the photosensitive part; a relay part 240 that relays the transfer of the signal charges transferred by the plurality of charge transfer parts to each charge storage part; an output part 230 that outputs the signal charges of the plurality of charge storage parts as electric signals; a first substrate 110 at which the photosensitive unit 210 is formed; and a second substrate 120 at which the charge storage part 220 and output unit 230 are formed. The first substrate and second substrate are stacked together, and the relay part 240 electrically couples the charge transfer parts of the first substrate to the charge storage parts of the second substrate by means of a connecting parts passing through the substrates outside the photosensitive region of the photosensitive part.

Various embodiments of the present technology may comprise methods and apparatus for a CCD image sensor. The image sensor may comprise a center channel disposed along a horizontal center line of the pixel array for collecting and transferring charge. The center channel is electrically coupled to a lateral overflow drain. In various embodiments, the image sensor may comprise a light shield under a gap between neighboring microlenses, such as a gap along the center line, to block light, such as to maintain a uniform, spatial sampling pattern across the device. In various embodiments, the image sensor may comprise a barrier region disposed between the center channel and the lateral overflow drain, for example to prevent charge from the lateral overflow drain being injected back into the center channel and adjacent pixels.

An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge, and a metal grid, including a metal shield that is coplanar with the metal grid, disposed proximate to a backside of the semiconductor material. The metal grid is optically aligned with the plurality of photodiodes to direct the image light into the plurality of photodiodes, and a contact pad is disposed in a trench in the semiconductor material. The contact pad is coupled to the metal shield to ground the metal shield.

A circuit may include an array of single photon avalanche diode (SPAD) cells, each SPAD cell configured to be selectively enabled by an activation signal. The circuit may include a control circuit configured to selectively enable a subset of the array of SPAD cells based on a measured count rate of the array of SPAD cells.

A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

A solid state imaging device has: a photosensitive part containing a plurality of charge transfer parts that transfer, in column units, the signal charges of a plurality of photoelectric conversion elements disposed in a matrix; a conversion/output unit that converts, to an electrical signal, the signal charges forwarded by the charge transfer parts; a peripheral circuit part that performs a predetermined process with respect to the electrical signals from the conversion/output part; a relay part that relays the forwarding to the peripheral circuit part of the electrical signal from the conversion/output part; a first substrate where a photosensitive part and the conversion/output part are formed; and a second substrate where the peripheral circuit part is formed. The first and second substrates are stacked together, and the relay part electrically connects the conversion/output part formed at the first substrate to the peripheral circuit part formed at the second substrate.

A socket includes a first base member that includes a module mount unit allowing a module including an imaging device and an object to be placed thereon and an electric connector that electrically connects the imaging device to an external apparatus, a second base member having an opening, and an engagement unit that causes the first base member to be engaged with the second base member under a condition that the module placed on the module mount unit is sandwiched by the first and second base members. When the first base member is engaged with the second base member by the engagement unit under a condition that the module placed on the module mount unit is sandwiched by the first base member and the second base member, the electric connector is electrically connected to the imaging device, and the object receives illumination light from a light source through the opening.

The optical device comprises a first substrate comprising at least one optical structure comprising a main portion and a surrounding portion at least partially surrounding said main portion. The device furthermore comprises non-transparent material applied onto said surrounding portion. The opto-electronic module comprises a plurality of these optical devices comprised in said first substrate. The method for manufacturing an optical device comprises the steps of a) providing a first substrate comprising at least one optical structure comprising a main portion and a surrounding portion at least partially surrounding said main portion; and b) applying a non-transparent material onto at least said surrounding portion. Said non-transparent material is present on at least said surrounding portion still in the finished optical device.

An array substrate, a method for fabricating the same and a display device are disclosed. The array substrate includes a substrate, and a first insulating layer and a thin film transistor which are arranged on the substrate in this order. The first insulating layer includes a colored region which is configured to absorb light. An orthographic projection of the colored region on the substrate at least covers an orthographic projection of the active layer of the thin film transistor on the substrate. By arranging the colored region of the first insulating layer, the light with a short wavelength from an external light source is absorbed. Thus, a channel of the active layer is protected, stable performance of a device is realized, and a service life of the device is prolonged.