The present disclosure discloses a semiconductor device and a method for preparing the same. The semiconductor device includes a substrate, a doped epitaxial layer located on one side of the substrate, a channel layer located on one side of the doped epitaxial layer away from the substrate, a potential barrier layer located on one side of the channel layer away from the doped epitaxial layer, and a first electrode and a second electrode located on one side of the potential barrier layer away from the channel layer, wherein the first electrode penetrates the potential barrier layer, the channel layer and part of the doped epitaxial layer, the first electrode forms a Schottky contact with the channel layer, and a resistance of the part of the doped epitaxial layer in contact with the first electrode is greater than a resistance of the channel layer.

An embodiment of a method of forming a programming element using a III/V semiconductor material may include forming one or more recesses in a first portion of a gate material and forming a first conductor on the one or more recesses. In an embodiment, the method may include configuring a programming circuit to form a voltage across the one or more recesses that is greater than a breakdown voltage of the gate material underlying the one or more recesses.

A semiconductor device includes: a first conductivity type semiconductor of a nanostructure; a first electrode that is in ohmic junction with an end part of the first conductivity type semiconductor; a second electrode that is coupled to the first electrode and is provided over a side surface of the first conductivity type semiconductor; and a depletion constituent that controls expansion of a depletion layer inside the nanostructure, wherein the depletion layer is expanded inside the first conductivity type semiconductor by the depletion constituent in a direction intersecting a movement direction of a carrier.

An embodiment of a method of forming a programming element using a III/V semiconductor material may include forming one or more recesses in a first portion of a gate material and forming a first conductor on the one or more recesses.

In an embodiment, the method may include configuring a programming circuit to form a voltage across the one or more recesses that is greater than a breakdown voltage of the gate material underlying the one or more recesses.

Semiconductor devices including a first region having a first three Nitride (III-N) layer and a second III-N layer, the second III-N layer is over the first III-N. The second III-N layer has spontaneous polarization less than the first III-N layer, such that a two-dimensional hole gas (2-DHG) will be formed at a junction of the first III-N layer to the second III-N layer. An Anode forms an ohmic contact to the 2-DHG. A second region includes a third III-N layer and a forth III-N layer, such that the fourth III-N layer is over the third III-N. The forth III-N layer has spontaneous polarization greater than the third III-N layer, such that two-dimensional electron gas (2-DEG) will be formed at a junction of the third III-N layer to the forth III-N layer. A Cathode forms an ohmic contact to the 2-DEG. The first and second regions are connected at an interface.

Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

Semiconductor devices including a first region having a first three Nitride (III-N) layer and a second III-N layer, the second III-N layer is over the first III-N. The second III-N layer has spontaneous polarization less than the first III-N layer, such that a two-dimensional hole gas (2-DHG) will be formed at a junction of the first III-N layer to the second III-N layer. An Anode forms an ohmic contact to the 2-DHG. A second region includes a third III-N layer and a forth III-N layer, such that the fourth III-N layer is over the third III-N. The forth III-N layer has spontaneous polarization greater than the third III-N layer, such that two-dimensional electron gas (2-DEG) will be formed at a junction of the third III-N layer to the forth III-N layer. A Cathode forms an ohmic contact to the 2-DEG. The first and second regions are connected at an interface.

Diodes employing one or more Group III-Nitride polarization junctions. A III-N polarization junction may include two III-N material layers having opposite crystal polarities. The opposing polarities may induce a two-dimensional charge sheet (e.g., 2D electron gas) within each of the two III-N material layers. Opposing crystal polarities may be induced through introduction of an intervening layer between two III-N material layers. The intervening layer may be of a material other than a Group III-Nitride. Where a P-i-N diode structure includes two Group III-Nitride polarization junctions, opposing crystal polarities at a first of such junctions may induce a 2D electron gas (2DEG), while opposing crystal polarities at a second of such junctions may induce a 2D hole gas (2DHG). Diode terminals may then couple to each of the 2DEG and 2DHG.

A semiconductor device includes: a first conductivity type semiconductor of a nanostructure; a first electrode that is in ohmic junction with an end part of the first conductivity type semiconductor; a second electrode that is coupled to the first electrode and is provided over a side surface of the first conductivity type semiconductor; and a depletion constituent that controls expansion of a depletion layer inside the nanostructure, wherein the depletion layer is expanded inside the first conductivity type semiconductor by the depletion constituent in a direction intersecting a movement direction of a carrier.