Methods of forming connector pad structures, interconnect structures, and structures thereof are disclosed. In some embodiments, a method of forming a connector pad structure includes forming an underball metallization (UBM) pad, and increasing a surface roughness of the UBM pad by exposing the UBM pad to a plasma treatment. A polymer material is formed over a first portion of the UBM pad, leaving a second portion of the UBM pad exposed.

A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.

A copper pillar bump semiconductor packaging method patterns an organic insulation layer formed under the copper pillar bumps to areas surrounding and in the vicinity of the copper pillar bumps only. The organic insulation layer, typically a thin film polymer layer, acts as a barrier layer for the copper pillar bumps to protect the semiconductor wafer during the copper pillar flip chip bonding process. The copper pillar bump semiconductor packaging method limits the areas where the organic insulation layer is applied to reduce the stress introduced to the semiconductor wafer by the organic insulation layer. In another embodiment, a copper pillar bump semiconductor packaging method patterns an organic insulation layer formed under the copper pillar bumps to areas surrounding the copper pillar bumps and along the path of a redistribution layer without using a large and continuous organic insulation layer.

A method of forming an insulating structure, comprising forming an insulating region comprising at least one electrical or electronic component or part thereof embedded within the insulating region, and forming a surface structure in a surface of the insulating region.

A method for producing a semiconductor device includes: depositing a barrier layer on a first surface of a semiconductor body having active regions of a semiconductor device; forming a contact layer that at least partially covers the barrier layer, the barrier layer being configured to prevent a material of the contact layer from diffusing into the semiconductor body; forming a first passivation layer on the contact layer and on exposed surfaces of the barrier layer; in a first etching process, removing the first passivation layer from above the barrier layer so as to uncover sections of the barrier layer; and in a second etching process, removing at least some sections of the barrier layer uncovered by the first etching process

A semiconductor device includes an opening and a redistribution layer gutter which are formed integrally in a polyimide resin film of a single layer. A redistribution layer is formed in the polyimide resin film of a single layer. A wiring material (silver) including the redistribution layer can be inhibited from migrating.

A method of manufacturing a semiconductor device includes providing a semiconductor substrate including a conductive pad disposed thereon; disposing a polymeric material over the semiconductor substrate and the conductive pad; patterning the polymeric material to form an opening exposing at least a portion of the conductive pad; disposing a conductive layer over the polymeric material and the portion of the conductive pad; and forming a conductor over the portion of the conductive pad and within the opening.

A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; and a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip. The first interconnection member and the second interconnection member include, respectively, redistribution layers electrically connected to the connection pads of the semiconductor chip, and the encapsulant fills spaces between walls of the through-hole and side surfaces of the semiconductor chip, and at least portions of the encapsulant extend to a space between the first interconnection member and the second interconnection member and a space between the active surface of the semiconductor chip and the second interconnection member.

A semiconductor device is provided, including a substrate, an interconnection structure formed on the substrate, a first top conductive layer formed on the interconnection structure, bars formed on the interconnection structure, and a second top conductive layer formed above the first top conductive layer. The first top conductive layer includes several first conducting portions spaced apart from each other, and at least one of the bars is positioned between adjacent two of the first conducting portions.