A semiconductor device with an anti-pad peeling structure is disclosed. The semiconductor device includes: a semiconductor substrate including a Through Substrate Via (TSV); a dielectric layer on the semiconductor substrate and including a plurality of recesses therein; and a pad above the semiconductor substrate to cover a portion of the dielectric layer and extend to the recesses; wherein the pad extends to the plurality of recesses, and a plurality of contact points are confined in the recesses between the pad and the conductive layer, and each of the contact points is at least partially excluded from a boundary of the TSV when being seen from a top-down perspective.

An integrated circuit device including a semiconductor substrate, a first bonding pad structure, a second bonding pad structure, and an internal bonding wire is provided. The first bonding pad structure is disposed on a surface of the semiconductor substrate and exposed outside of the semiconductor substrate. The second bonding pad structure is disposed on the surface of the semiconductor substrate and exposed outside of the semiconductor substrate. The first bonding pad structure is electrically coupled to the second bonding pad structure via the internal bonding wire. The integrated circuit device having a better electrical performance is provided by eliminating internal resistance drop in power supply trails or ground trails, and improving signal integrity of the integrated circuit device.

The invention provides a semiconductor structure. The semiconductor structure includes a substrate. A first passivation layer is disposed on the substrate. A conductive pad is disposed on the first passivation layer. A second passivation layer is disposed on the first passivation layer. A passive device is disposed on the conductive pad, passing through the second passivation layer. An organic solderability preservative film covers the passive device.

A semiconductor device includes a semiconductor chip formed with an SiC-IGBT including an SiC semiconductor layer, a first conductive-type collector region formed such that the collector region is exposed on a second surface of the SiC semiconductor layer, a second conductive-type base region formed such that the base region contacts the collector region, a first conductive-type channel region formed such that the channel region contacts the base region, a second conductive-type emitter region formed such that the emitter region contacts the channel region to define a portion of a first surface of the SiC semiconductor layer, a collector electrode connected to the collector region, and an emitter electrode connected to the emitter region. A MOSFET of the device is connected in parallel to the SiC-IGBT, and includes a second conductive-type source region electrically connected to the emitter electrode and a second conductive-type drain region electrically connected to the collector electrode.

Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.

A method of manufacturing a semiconductor device includes providing a semiconductor substrate including a conductive pad disposed thereon; disposing a polymeric material over the semiconductor substrate and the conductive pad; patterning the polymeric material to form an opening exposing at least a portion of the conductive pad; disposing a conductive layer over the polymeric material and the portion of the conductive pad; and forming a conductor over the portion of the conductive pad and within the opening.

An isolation device for isolating a first signal of a first circuit from a second circuit disclosed. The isolation device may have a substrate and a plurality of metal layers disposed on the substrate. The isolation device comprises a first plate that is electrically coupled to the first circuit, and a second plate that is electrically coupled to the second circuit. The first plate is configured to transmit the first signal from to a second plate that is electrically isolated from the first plate. The first plate and the second plate is surrounded by an isolation material. The isolation device further comprises at least one trench that extend at least partially through the isolation material in a direction that is substantially perpendicular to the first plate and the second plate. The at least one trench may circumscribe one of the first plate and the second plate.

A semiconductor chip is provided including an integrated circuit on a substrate; pads electrically connected to the integrated circuit; a lower insulating structure defining contact holes exposing the pads, respectively; and first, second and third conductive patterns electrically connected to the pads. The second conductive pattern is between the first conductive pattern and the third conductive pattern when viewed from a plan view. Each of the first to third conductive patterns includes a contact portion filling the contact hole, a first conductive line portion extending in one direction on the lower insulating structure, and a bonding pad portion. Ends of the bonding pad portions of the first and third conductive patterns protrude in the one direction as compared with an end of the bonding pad portion of the second conductive pattern when viewed from a plan view.

A semiconductor chip, a semiconductor package including the same, and a method of fabricating the same are provided. The semiconductor chip includes an integrated circuit on a substrate, a pad electrically connected to the integrated circuit, a lower insulating structure having a contact hole exposing the pad, and a conductive pattern including a contact portion filling the contact hole, a conductive line portion provided on the lower insulating structure to extend in a specific direction, and a bonding pad portion. The contact portion has a first thickness in a direction substantially perpendicular to a top surface of the substrate and a second thickness in another direction substantially parallel to the top surface of the substrate, the first thickness is greater than the second thickness, and the lower insulating structure includes a plurality of air gaps formed therein.

Integrated circuit chips and chip packages are disclosed that include an over-passivation scheme at a top of the integrated circuit chip and a bottom scheme at a bottom of the integrated circuit chip using a top post-passivation technology and a bottom structure technology. The integrated circuit chips can be connected to an external circuit or structure, such as ball-grid-array (BGA) substrate, printed circuit board, semiconductor chip, metal substrate, glass substrate or ceramic substrate, through the over-passivation scheme or the bottom scheme. Related fabrication techniques are described.