A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.

A semiconductor package is provided. The semiconductor package includes a semiconductor device bonded to a base through a first conductive structure. The semiconductor device includes a carrier substrate including a conductive trace. A portion of the conductive trace is elongated. The semiconductor device also includes a second conductive structure above the carrier substrate. A portion of the second conductive structure is in contact with the portion of the conductive trace. The semiconductor device further includes a semiconductor body mounted above the conductive trace. The semiconductor body is connected to the second conductive structure.

A device-bonded body includes: a first device where a plated bump is disposed; a second device where a bonding electrode bonded to the plated bump is disposed; and a sealing layer made of NCF or NCP, the sealing layer being disposed between the first device and the second device and including filler particles made of inorganic material; wherein a surface of the plated bump includes a first area and a second area higher than the first area; and at least a part of a side surface of an outer circumferential portion of the second area intersects with a surface of the first area.

A photoelectric conversion unit that outputs an image signal according to received light and a bonding pad section are disposed on one surface side of the substrate, and the bonding pad section has at least: a first opening provided to expose a pad electrode at a bottom; and a second opening that is arranged to surround the first opening and that is shallower than the first opening. The surface of a terrace in the bonding pad section is formed such that multiple types of materials are exposed.

The present invention relates to a nitride-based electronic device and a method for manufacturing same, the nitride-based electronic device comprising a substrate, a metal electrode and a plurality of protection layers, wherein, among the protection layers, at least two protection layers covering one portion of the electrode so that one portion of the upper part of the electrode is exposed are configured so that the upper protection layer covers the end part of the lower protection layer so as to prevent the end part of the lower protection layer from being exposed.

A package structure including a first redistribution circuit structure, a semiconductor die, first antennas and second antennas is provided. The semiconductor die is located on and electrically connected to the first redistribution circuit structure. The first antennas and the second antennas are located over the first redistribution circuit structure and electrically connected to the semiconductor die through the first redistribution circuit structure. A first group of the first antennas are located at a first position, a first group of the second antennas are located at a second position, and the first position is different from the second position in a stacking direction of the first redistribution circuit structure and the semiconductor die.

A method of manufacturing a semiconductor device includes: forming a base portion of a bonding pad on a semiconductor portion, the base portion further comprising a base layer; forming a main surface of the bonding pad, the main surface comprising a bonding region; bonding a bond wire or clip to the bonding region; and forming a supplemental structure directly on the base portion. The supplemental structure laterally adjoins the bond wire or clip or is laterally spaced apart from the bond wire or clip. A volume-related specific heat capacity of the supplemental structure is higher than a volume-related specific heat capacity of the base layer.

An integrated circuit (IC) includes a substrate having functional circuitry for realizing at least one circuit function configured together with at least one high voltage isolation component including a top metal feature above the substrate. A crack suppressing dielectric structure including at least a crack resistant dielectric layer is on at least a top of the top metal feature. At least one dielectric passivation overcoat (PO) layer is on an outer portion of the top metal feature.

The present application provides a method for preparing a semiconductor device, include the following steps: forming a source/drain (S/D) region in a semiconductor substrate; forming a bonding pad over the semiconductor substrate; forming a first spacer over a sidewall of the bonding pad; forming a first passivation layer covering the bonding pad and the first spacer; and forming a conductive bump over the first passivation layer, wherein the conductive bump penetrates through the first passivation layer to electrically connect to the bonding pad and the S/D region.

A semiconductor device includes: a first semiconductor chip having a first pad and a second pad, a depression being formed in the second pad; an organic insulating film provided on the first semiconductor chip, the organic insulating film covering the depression and not covering at least a portion of the first pad; and a redistribution layer having a lower portion connected to the first pad and an upper portion disposed on the organic insulating film.