An integrated circuit isolation product includes a first integrated circuit die. The first integrated circuit die includes a first terminal and a second terminal adjacent to the first terminal. The first terminal and the second terminal are configured as a differential pair of terminals configured to communicate a differential signal across an isolation barrier. The first integrated circuit die includes at least one additional terminal adjacent to the differential pair of terminals. The at least one additional terminal is disposed symmetrically with respect to the differential pair of terminals. The first terminal may have a first parasitic capacitance and the second terminal may have a second parasitic capacitance. The first parasitic capacitance may be substantially the same as the second parasitic capacitance. The at least one additional terminal may be disposed symmetrically with respect to a line of symmetry for the differential pair of terminals.

The present disclosure provides a semiconductor package, including a first semiconductor structure, including an active region in a first substrate portion, wherein the active region includes at least one of a transistor, a diode, and a photodiode, a first bonding metallization over the first semiconductor structure, a first bonding dielectric over the first semiconductor structure, surrounding and directly contacting the first bonding metallization, a second semiconductor structure over a first portion of the first semiconductor structure, wherein the second semiconductor structure includes a conductive through silicon via, a second bonding dielectric at a back surface of the second semiconductor structure, a second bonding metallization surrounded by the second bonding dielectric and directly contacting the second bonding dielectric, and a conductive through via over a second portion of the first semiconductor structure different from the first portion.

Disclosed herein is a semiconductor device including a conductive member that has a main surface facing in a thickness direction, a semiconductor element that has a plurality of pads facing the main surface, a plurality of electrodes that are individually formed with respect to the plurality of pads and protrude from the plurality of pads toward the main surface, and a bonding layer for electrically bonding the main surface to the plurality of electrodes. The bonding layer includes a first region having conductivity and a second region having electrical insulation. The first region includes a metal portion. At least a part of the second region includes a resin portion.

Sensor packages and manufacturing methods thereof are disclosed. One of the sensor packages includes a semiconductor chip and a redistribution layer structure. The semiconductor chip has a sensing surface. The redistribution layer structure is arranged to form an antenna transmitter structure aside the semiconductor chip and an antenna receiver structure over the sensing surface of the semiconductor chip.

A method for forming a semiconductor die, includes forming an interlayer dielectric layer on a substrate having a semiconductor die region, a seal-ring region, and a scribe line region, forming a metal pad and a test pad on the interlayer dielectric layer, forming a passivation dielectric layer on the interlayer dielectric layer, the metal pad, and the test pad, first etching the passivation dielectric layer and the interlayer dielectric layer existing between the seal-ring region and the scribe line region to a predetermined depth using a plasma etching process, second etching the passivation dielectric layer to expose the metal pad and the test pad, forming a bump on the metal pad, and dicing the substrate while removing the scribe line region by mechanical sawing.

An integrated circuit structure includes an aluminum pad layer on a dielectric stack, a passivation layer covering the aluminum pad layer, and an aluminum shield layer including aluminum routing patterns disposed directly above an embedded memory area and embedded in the dielectric stack. The aluminum shield layer is electrically connected to the uppermost copper layer through a plurality of tungsten vias. The plurality of tungsten vias is embedded in the dielectric stack.

A semiconductor device includes first and second metal-insulator-metal structures. The first metal-insulator-metal structure includes a first bottom conductor plate, a first portion of a first dielectric layer, a first middle conductor plate, a first portion of a second dielectric layer, and a first top conductor plate stacked up one over another. The second metal-insulator-metal structure includes a second bottom conductor plate, a second portion of the first dielectric layer, a second middle conductor plate, a second portion of the second dielectric layer, and a second top conductor plate stacked up one over another. In a cross-sectional view, the first bottom conductor plate is wider than the first middle conductor plate that is wider than the first top conductor plate, and the second bottom conductor plate is narrower than the second middle conductor plate that is narrower than the first top conductor plate.

A semiconductor device includes a semiconductor layer having a first surface, an insulating layer formed at the first surface of the semiconductor layer, a Cu conductive layer formed on the insulating layer, the Cu conductive layer made of a metal mainly containing Cu, a second insulating layer formed on the insulating layer, the second insulating layer covering the Cu conductive layer, a Cu pillar extending in a thickness direction in the second insulating layer, the Cu pillar made of a metal mainly containing Cu and electrically connected to the Cu conductive layer, and an intermediate layer formed between the Cu conductive layer and the Cu pillar, the intermediate layer made of a material having a linear expansion coefficient smaller than a linear expansion coefficient of the Cu conductive layer and smaller than a linear expansion coefficient of the Cu pillar.

A chip structure is provided. The chip structure includes a substrate, a redistribution layer over the substrate, a bonding pad over the redistribution layer, a shielding pad over the redistribution layer and surrounding the bonding pad, an insulating layer over the redistribution layer and the shielding pad, and a bump over the bonding pad and the insulating layer. The insulating layer includes a first part and a second part surrounded by the first part, the first part has first thickness, the second part has a second thickness, and the first thickness and the second thickness are different.

A bonding method of package components and a bonding apparatus are provided. The method includes: providing at least one first package component and a second package component, wherein the at least one first package component has first electrical connectors and a first dielectric layer at a bonding surface of the at least one first package component, and the second package component has second electrical connectors and a second dielectric layer at a bonding surface of the second package component; bringing the at least one first package component and the second package component in contact, such that the first electrical connectors approximate or contact the second electrical connectors; and selectively heating the first electrical connectors and the second electrical connectors by electromagnetic induction, in order to bond the first electrical connectors with the second electrical connectors.