A semiconductor chip module includes a chip unit including first and second semiconductor chips formed over a single body to be adjacent in a first direction with a scribe line region interposed therebetween, and having a first surface over which bonding pads of the first and second semiconductor chips are positioned; redistribution lines formed over the first surface, having one set of ends which are respectively electrically coupled to the bonding pads, and extending in a direction oblique to the first direction toward the scribe line region; and redistribution pads disposed over the first surface, and electrically coupled with another set of ends of the redistribution lines. The redistribution pads includes shared redistribution pads electrically coupled in common to the redistribution lines electrically coupled to the bonding pads of the first semiconductor chip and the redistribution lines electrically coupled to the bonding pads of the second semiconductor chip; and individual redistribution pads individually electrically coupled to the redistribution lines which are not electrically coupled with the shared redistribution pads.

A packaged multichip device includes a first IC die with an isolation capacitor utilizing a top metal layer as its top plate and a lower metal layer as its bottom plate. A second IC die has a second isolation capacitor utilizing its top metal layer as its top plate and a lower metal layer as its bottom plate. A first bondwire end is coupled to one top plate and a second bondwire end is coupled to the other top plate. The second bondwire end includes a stitch bond including a wire approach angle not normal to the top plate it is bonded to and is placed so that the stitch bond's center is positioned at least 5% further from an edge of this top plate on a bondwire crossover side compared to a distance of the stitch bond's center from the side opposite the bondwire crossover side.

Bond pad structures and methods for fabricating bond pad structures. A bond pad and a plurality of fill lines are formed on the top surface of a dielectric layer. The fill lines are arranged on the top surface of the dielectric layer adjacent to the bond pad, and may be separated from the bond pad by a fill keep-out zone. One or more Under Bump Metallurgy (UBM) layers may be arranged on the bond pad and may extend outwardly to overlap with the fill lines.

A methodology and medium for regular and predictable cleaning the support hardware such as capillary tube in semiconductor assembly equipment components, while it is still in manual, semi-automated, and automated assembly are disclosed. The cleaning material may include a cleaning pad layer and one or more intermediate layers that have predetermined characteristics.

A semiconductor device with improved reliability is provided. The semiconductor device is characterized by its embodiments in that sloped portions are formed on connection parts between a pad and a lead-out wiring portion, respectively. This feature suppresses crack formation in a coating area where a part of the pad is covered with a surface protective film.

A semiconductor device includes a semiconductor substrate having a chip region and an edge region, a plurality of connection structures provided in a lower insulating layer of the edge region and arranged at first intervals in a first direction, an upper insulating layer covering the connection structures, and a plurality of redistribution pads disposed on the upper insulating layer and connected to the connection structures, respectively. Each of the redistribution pads includes a pad portion provided on the chip region. The pad portions of the redistribution pads are spaced apart from the connection structures by a first distance in a second direction intersecting the first direction when viewed in a plan view.

A semiconductor device includes a semiconductor substrate, an interlayer dielectric film, a plurality of pad parts, a wiring layer, and a surface protection film. The semiconductor substrate includes a semiconductor element on a surface of the semiconductor substrate. The interlayer dielectric film is disposed on the surface of the semiconductor substrate. The wiring layer is disposed in the interlayer dielectric film. The hard film is disposed opposite to the semiconductor substrate with respect to the interlayer dielectric film, and is harder than the interlayer dielectric film, The pad parts are disposed opposite to the interlayer dielectric film with respect to the hard film, The surface protection film is disposed in at least an opposing region where the pad parts oppose to each other. The surface protection film is a silicon nitride film or a silicon oxide film.

The object of the present invention is to suppress cracks in the interlayer insulating film attributed to growth of Cu crystal grains. The semiconductor device (101) includes a source region (5), an interlayer insulating film (7) made of silicon oxide, having an opening portion, and formed on the source region (5), a Cu electrode (1) electrically connected to the source region (5) through the opening portion of the interlayer insulating film (7) and an end portion thereof is located on the interlayer insulating film (7) inside an end portion of the interlayer insulating film (7), and a stress relieving layer (13) formed between the Cu electrode (1) and the interlayer insulating film (7), made of a material having a higher fracture toughness value than the interlayer insulating film (7), and extending from the inside to the outside of the end portion of the Cu electrode (1).

An apparatus and method for reducing the volume of a resource allocation information message in a broadband wireless communication system are provided. The method includes transmitting a message including information indicating a periodicity of an uplink control channel for an initial network entry; and receiving an uplink signal for the initial network entry through the uplink control channel.

Provided are a stacked image sensor package and a packaging method thereof. A stacked image sensor package includes: a stacked image sensor in which a pixel array die and a logic die are stacked; a redistribution layer formed on one surface of the stacked image sensor, rerouting an input/output of the stacked image sensor, and including a first pad and a second pad; a memory die connected with the first pad of the redistribution layer and positioned on the stacked image sensor; and external connectors connected with the second pad, connecting the memory die and the stacked image sensor with an external device, and having the memory die positioned therebetween.