Various embodiments of the present disclosure are directed towards a semiconductor structure including a bond bump disposed on an upper surface of an upper conductive structure. The upper conductive structure overlies a substrate. A buffer layer is disposed along the upper surface of the upper conductive structure. The bond bump comprises a sidewall having a straight sidewall segment overlying a curved sidewall segment.

The present disclosure provides a method for manufacturing a semiconductor structure employing a via structure. The method includes forming a first conductive pad on a first semiconductor device; forming a second conductive pad on the first conductive pad; connecting a second semiconductor device to the first semiconductor device; and forming a via structure in the second semiconductor device, The via structure contacts the second conductive pad, and the first conductive pad and the second conductive pad are formed of different metal materials.

The present disclosure provides a semiconductor structure and a method for preparing the semiconductor structure. The semiconductor structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first semiconductor substrate, a first conductive pad and a second conductive pad. The first conductive pad is disposed on the first semiconductor substrate. The second conductive pad is disposed on the first conductive pad. The second semiconductor device is disposed on the first semiconductor device and comprises a second semiconductor substrate and a via structure. The via structure is disposed in the second semiconductor substrate and contacts the second conductive pad. Chemical reactivity of the second conductive pad is less than chemical reactivity of the first conductive pad.

An electronic device comprises a semiconductor die, a layer stack disposed on the semiconductor die and comprising one or more functional layers, wherein the layer stack comprises a protection layer which is an outermost functional layer of the layer stack, and a sacrificial layer disposed on the protection layer, wherein the sacrificial layer comprises a material which decomposes or becomes volatile at a temperature between 100° and 400° C.

An electronic device comprises a semiconductor die, a layer stack disposed on the semiconductor die and comprising one or more functional layers, wherein the layer stack comprises a protection layer which is an outermost functional layer of the layer stack, and a sacrificial layer disposed on the protection layer, wherein the sacrificial layer comprises a material which decomposes or becomes volatile at a temperature between 100° and 400° C.

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes: a semiconductor chip; a substrate facing an active surface of the semiconductor chip; and a conductive bump extending from the active surface of the semiconductor chip toward the substrate, wherein the conductive bump comprises: a plurality of bump segments comprising a first group of bump segments and a second group of bump segments, wherein each bump segment comprises the same segment height in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment comprises a volume defined by the multiplication of the segment height with the average cross-sectional area of the bump segment; wherein the ratio of the total volume of the first group of bump segments to the total volume of the second group of bump segments is between about 0.03 and about 0.8.

A semiconductor structure includes a conductive structure over a first passivation layer; and a second passivation layer over the conductive structure and the first passivation layer. The second passivation layer has a first oxide film extending along a top surface of the first passivation layer, sidewalls and a top surface of the conductive structure, wherein a top surface of the first oxide film is planar. The second passivation layer further includes a second oxide film over a top surface of the first oxide film and a top surface of the conductive structure, wherein a top surface of the second oxide film is planar. The second passivation layer further includes a third oxide film extending along a top surface of the second oxide film, the sidewalls and the top surface of the conductive structure, wherein a top surface of the third oxide film is curved.

A semiconductor device includes a substrate, a wiring formed on the substrate, an anti-reflection film of titanium nitride formed on the wiring, and a silicon oxide film formed on the anti-reflection film. A pad portion which exposes the wiring is formed at a place where a first opening portion and a second opening portion overlap with each other. A metal nitride region containing fewer dangling bonds is formed from a metal nitride film containing fewer dangling bonds than in the anti-reflection film in at least a part of one or both of an opposed surface of the anti-reflection film which faces the silicon oxide film above the anti-reflection film, and an exposed surface of the anti-reflection film which is exposed in the second opening portion.

The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method includes forming a plurality of bond pad structures over an interconnect structure on a front-side of a semiconductor body. The plurality of bond pad structures respectively have a titanium contact layer. The interconnect structure and the semiconductor body are patterned to define trenches extending into the semiconductor body. A dielectric fill material is formed within the trenches. The dielectric fill material is etched to expose the titanium contact layer prior to bonding the semiconductor body to a carrier substrate. The semiconductor body is thinned to expose the dielectric fill material along a back-side of the semiconductor body and to form a plurality of integrated chip die. The dielectric fill material is removed to separate the plurality of integrated chip die.

Various embodiments of the present disclosure are directed towards a semiconductor device structure including a bump structure overlying a bond pad. The bond pad is disposed over a semiconductor substrate. An etch stop layer overlies the bond pad. A buffer layer is disposed over the bond pad and separates the etch stop layer and the bond pad. The bump structure includes a base portion contacting an upper surface of the bond pad and an upper portion extending through the etch stop layer and the buffer layer. The base portion of the bump structure has a first width or diameter and the upper portion of the bump structure has a second width or diameter. The first width or diameter being greater than the second width or diameter.