A bonding structure, a package structure, and a method for manufacturing a package structure are provided. The package structure includes a first substrate, a first passivation layer, a first conductive layer, and a first conductive bonding structure. The first passivation layer is disposed on the first substrate and has an upper surface. The first passivation layer and the first substrate define a first cavity. The first conductive layer is disposed in the first cavity and has an upper surface. A portion of the upper surface of the first conductive layer is below the upper surface of the first passivation layer. The first conductive bonding structure is disposed on the first conductive layer.

An interconnection structure of a semiconductor chip may include an interconnection via, a lower pad, a conductive bump, and an upper pad. The interconnection via may be arranged in the semiconductor chip. The lower pad may be arranged on a lower end of the interconnection via exposed through a lower surface of the semiconductor chip. The conductive bump may be arranged on the lower pad. The upper pad may be arranged on an upper end of the interconnection via exposed through an upper surface of the semiconductor chip. The upper pad may have a width wider than a width of the interconnection via and narrower than a width of the lower pad. Thus, an electrical short between the conductive bumps may not be generated in the interconnection structure having a thin thickness.

A method includes patterning a cavity through a first passivation layer of a first package component, the first package component comprising a first semiconductor substrate and bonding the first package component to a second package component. The second package component comprises a second semiconductor substrate and a second passivation layer. Bonding the first package component to the second package component comprises directly bonding the first passivation layer to the second passivation layer; and reflowing a solder region of a conductive connector disposed in the cavity to electrically connect the first package component to the second package component.

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first insulating layer formed over a conductive feature and a capacitor structure embedded in the first insulating layer. The semiconductor device also includes a bonding pad formed over the first insulating layer and corresponding to the capacitor structure. The bonding pad has a top surface and a multi-step edge to form at least three corners. In addition, the semiconductor device structure includes a second insulating layer conformally covering the at least three corners formed by the top surface and the multi-step edge of the bonding pad.

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first insulating layer formed over a conductive feature and a capacitor structure embedded in the first insulating layer. The semiconductor device also includes a bonding pad formed over the first insulating layer and corresponding to the capacitor structure. The bonding pad has a top surface and a multi-step edge to form at least three corners. In addition, the semiconductor device structure includes a second insulating layer conformally covering the at least three corners formed by the top surface and the multi-step edge of the bonding pad.

A method includes patterning a cavity through a first passivation layer of a first package component, the first package component comprising a first semiconductor substrate and bonding the first package component to a second package component. The second package component comprises a second semiconductor substrate and a second passivation layer. Bonding the first package component to the second package component comprises directly bonding the first passivation layer to the second passivation layer; and reflowing a solder region of a conductive connector disposed in the cavity to electrically connect the first package component to the second package component.

The present application discloses a semiconductor device with slanted conductive layers and a method for fabricating the semiconductor device with the slanted conductive layers. The semiconductor device includes a substrate, a first insulating layer positioned above the substrate, first slanted conductive layers positioned in the first insulating layer, and a top conductive layer positioned covering the first slanted conductive layers.

A bonding structure, a package structure, and a method for manufacturing a package structure are provided. The package structure includes a first substrate, a first passivation layer, a first conductive layer, and a first conductive bonding structure. The first passivation layer is disposed on the first substrate and has an upper surface. The first passivation layer and the first substrate define a first cavity. The first conductive layer is disposed in the first cavity and has an upper surface. A portion of the upper surface of the first conductive layer is below the upper surface of the first passivation layer. The first conductive bonding structure is disposed on the first conductive layer.

A semiconductor device may include a semiconductor chip in an encapsulant. A first insulation layer may be disposed on the encapsulant and the semiconductor chip. A horizontal wiring and a primary pad may be disposed on the first insulation layer. A secondary pad may be disposed on the primary pad. A second insulation layer covering the horizontal wiring may be disposed on the first insulation layer. A solder ball may be disposed on the primary pad and the secondary pad. The primary pad may have substantially the same thickness as a thickness of the horizontal wiring.

Various semiconductor chip solder bump and underbump metallization (UBM) structures and methods of making the same are disclosed. In one aspect, a method is provided that includes forming a first underbump metallization layer on a semiconductor chip is provided. The first underbump metallization layer has a hub, a first portion extending laterally from the hub, and a spoke connecting the hub to the first portion. A polymer layer is applied to the first underbump metallization layer. The polymer layer includes a first opening in alignment with the hub and a second opening in alignment with the spoke. A portion of the spoke is removed via the second opening to sever the connection between the hub and the first portion.