A semiconductor package includes: a die having a conductive pad at a first side of the die; and a redistribution structure over the first side of the die and electrically coupled to the die. The redistribution structure includes: a first dielectric layer including a first dielectric material; a first via in the first dielectric layer, where the first via is electrically coupled to the conductive pad of the die; and a first dielectric structure embedded in the first dielectric layer, where the first dielectric structure includes a second dielectric material different from the first dielectric material, where the first dielectric structure laterally surrounds the first via and contacts sidewalls of the first via.

The present disclosure provides a semiconductor device and a method of fabricating the same, including a substrate, an extension pad array and a margin structure. The extension pad array is disposed on the substrate and includes a plurality of extension pads separately arranged along a first direction and a second direction. The margin structure is disposed outside the extension pad array and includes a plurality of first protrusions, and a plurality of second protrusions respectively contacting one corresponding first protrusion, wherein a side face of one of the first protrusions and a side face of one of the second protrusions adjacent to each other define an acute angle therebetween, and a portion of the extension pads is disposed between the two adjacent side faces.

The present disclosure provides a method for forming a semiconductor package and a semiconductor package. The method comprises providing a semiconductor wafer with at least one semiconductor device formed thereon, the at least one semiconductor device comprising a plurality of metal bond pads formed on the semiconductor wafer. The method further comprises forming a first photoresist layer having a first opening directly above at least a portion of a first metal bond pad; forming a first metal feature of a first height in the first opening; removing the first photoresist layer; forming a second photoresist layer having a second opening directly above at least a portion of the second metal bond pad; forming a second metal feature of a second height in the second opening; and removing the second photoresist layer. Using the method, metal bumps having different heights and different sizes can be formed in a controlled manner.