Some embodiments relate to a bond pad structure of an integrated circuit (IC). The bond structure includes a bond pad and an intervening metal layer positioned below the bond pad. The intervening metal layer has a first face and a second face. A first via layer is in contact with the first face of intervening metal layer. The first via layer has a first via pattern including a single via. The bond structure also includes a second via layer in contact with the second face of the intervening metal layer. The second via layer has a second via pattern that is different than first via pattern. The second via pattern includes a first via surrounding a second via. The first and second vias are concentric with one another about a central point of the second via layer.

Some embodiments relate to a bond pad structure of an integrated circuit (IC). The bond structure includes a bond pad and an intervening metal layer positioned below the bond pad. The intervening metal layer has a first face and a second face. A first via layer is in contact with the first face of intervening metal layer. The first via layer has a first via pattern including a single via. The bond structure also includes a second via layer in contact with the second face of the intervening metal layer. The second via layer has a second via pattern that is different than first via pattern. The second via pattern includes a first via surrounding a second via. The first and second vias are concentric with one another about a central point of the second via layer.

A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.

The present disclosure relates to a redistribution layer (RDL) structure, a manufacturing method thereof, and a semiconductor structure having the same. The RDL structure includes an RDL, disposed on a substrate, and including a bond pad portion and a wire portion connected to the bond pad portion, where a thickness of the bond pad portion is greater than a thickness of the wire portion. According to the RDL structure provided by the present disclosure, a bond pad portion has a thickness greater than a wire portion, so that the thicker bond pad portion can provide more impact buffer areas in gold or copper wire bonding of packaging to prevent a substrate from breaking due to a stress, and prevent an increase in a parasitic capacitance between wires.

A semiconductor device may include a bond pad/probe pad pair that includes a bond pad and a probe pad positioned to be adjacent to each other to form an L shape. The device may also include a through-silicon via (TSV) pad positioned to be at least partially or entirely inside the recess area of the L shape. The bond pad and the probe pad may each have an opening, and at least a portion of the opening of the bond pad may extend into a portion of the opening of the probe pad. The arrangement of the bond pad, the probe pad and the TSV may be implemented in a wafer-on-wafer (WOW) that includes multiple stacked wafers. A method of fabricating the TSV may include etching the stacked wafers to form a TSV opening that extends through the multiple wafers, and filling the TSV opening with conductive material.

A chip includes: a chip substrate including a central area and an edge area surrounding the central area; and a plurality of pads arranged on the chip substrate, the plurality of pads including a first pad and a second pad, wherein the first pad is arranged in the edge area and includes at least one straight side adjacent to a side of the chip substrate, and the second pad is arranged in the central area.

A semiconductor apparatus including a bonding region in which a wire is bonded, includes: a semiconductor substrate; an oxide film provided on a principal surface of the semiconductor substrate in the bonding region; a polysilicon layer provided on the oxide film; an interlayer film partially provided on the polysilicon layer; a barrier metal directly provided on the polysilicon layer and the interlayer film; and an electrode provided on the barrier metal.

A connector structure and a manufacturing method thereof are provided. The connector structure includes a semiconductor substrate, a metal layer, a passivation layer, and a conductive structure. The metal layer is over the semiconductor substrate. The passivation layer is over the metal layer and includes an opening. The conductive structure is in contact with the metal layer in a patterned surface structure of the conductive structure through the opening of the passivation layer.

Provided is a semiconductor integrated circuit device including a plurality of columns of IO cells and having a configuration capable of reducing wiring delays without causing an increase in the area. The semiconductor integrated circuit device includes a first IO cell column group including an IO cell column closest to a periphery of a chip, and a second IO cell column group including an IO cell column adjacent to the first IO cell column group at the side closer to the core region. At least one of the first IO cell column group or the second IO cell column group includes two or more IO cell columns, and the two or more IO cell columns are aligned in the second direction such that the lower power supply voltage regions face each other or the higher power supply voltage regions face each other.

The embodiments of the present invention discloses an arrangement of bond pads on an integrated circuit chip. The integrated circuit chip includes: a first row of bond pads; and a second row of bond pads, wherein bond pads in the first row are positioned alternately with bond pads in the second row, and a short side of the bond pads in the first row and the second row is parallel to a long side of the integrated circuit chip. With this arrangement of bond pads on the integrated circuit chip, the bond pads may occupy a reduced area of a surface of the integrated circuit chip.