A first semiconductor die includes first semiconductor devices located over a first substrate, first interconnect-level dielectric material layers embedding first metal interconnect structures and located on the first semiconductor devices, and a first pad-level dielectric layer located on the first interconnect-level dielectric material layers and embedding first bonding pads. Each of the first bonding pads includes a first proximal horizontal surface and at least one first distal horizontal surface that is more distal from the first substrate than the first proximal horizontal surface is from the first substrate and has a lesser total area than a total area of the first proximal horizontal surface. A second semiconductor die including second bonding pads that are embedded in a second pad-level dielectric layer can be bonded to a respective distal surface of the first bonding pads.

An integrated circuit device (100) and method comprising an IC chip (102) having metal interconnect levels (M1-Mn) including a last copper interconnect level (Mn) and a chip-to-package interconnect (110) overlying and connected to the last copper interconnect level (Mn). The chip-to-package interconnect (110) having a via (112) connected to a first element (306a) of the last copper interconnect level (Mn) and a copper conductive structure (118) (e.g., bump copper). The via (112) includes a barrier material (112a) and a tungsten fill layer (112b), the via coupled between the copper conductive structure (118) and the first element (306a).

An integrated circuit device (100) and method comprising an IC chip (102) having metal interconnect levels (M1-Mn) including a last copper interconnect level (Mn) and a chip-to-package interconnect (110) overlying and connected to the last copper interconnect level (Mn). The chip-to-package interconnect (110) having a via (112) connected to a first element (306a) of the last copper interconnect level (Mn) and a copper conductive structure (118) (e.g., bump copper). The via (112) includes a barrier material (112a) and a tungsten fill layer (112b), the via coupled between the copper conductive structure (118) and the first element (306a).

A semiconductor package for high-speed die connections using a conductive insert, the semiconductor package comprising: a die; a plurality of redistribution layers; a conductive insert housed in a perforation through the plurality of redistribution layers; and a conductive bump conductively coupled to an input/output (I/O) connection point of the die via the conductive insert.

A semiconductor device of the present disclosure includes: a semiconductor substrate having a first main surface; a first aluminum electrode having a first surface facing the first main surface and a second surface opposite to the first surface, the first aluminum electrode being disposed on the semiconductor substrate; a passivation film that covers a peripheral edge of the second surface and that is provided with an opening from which a portion of the second surface is exposed; and a copper film. The second surface exposed from the opening is provided with a recess that is depressed toward the first surface. The copper film is disposed in the recess.

A method is provided. The method includes forming an interconnect structure electrically connected to a semiconductor device; forming a tantalum-based barrier layer over the interconnect structure; oxidizing the tantalum-based barrier layer to form a tantalum oxide over the tantalum-based barrier layer; and forming a metal layer over the tantalum oxide.

A method is provided. The method includes forming an interconnect structure electrically connected to a semiconductor device; forming a tantalum-based barrier layer over the interconnect structure; oxidizing the tantalum-based barrier layer to form a tantalum oxide over the tantalum-based barrier layer; and forming a metal layer over the tantalum oxide.

Semiconductor devices are provided. A semiconductor device includes an insulating layer and a conductive element in the insulating layer. The semiconductor device includes a first barrier pattern in contact with a surface of the conductive element and a surface of the insulating layer. The semiconductor device includes a second barrier pattern on the first barrier pattern. Moreover, the semiconductor device includes a metal pattern on the second barrier pattern. Related semiconductor packages are also provided.

A semiconductor package includes a first semiconductor chip including a first chip body portion and a first chip rear bump disposed in a region recessed into the first chip body portion, and a second semiconductor chip stacked on the first semiconductor chip and including a second chip body portion and a second chip front bump protruding from the second chip body portion. The first chip rear bump includes a lower metal layer and a solder layer disposed on the lower metal layer. The second chip front bump is bonded to the solder layer. The second chip front bump is disposed to cover at least the solder layer on a bonding surface of the second chip front bump and the solder layer.

A bonding structure, a package structure, and a method for manufacturing a package structure are provided. The package structure includes a first substrate, a first passivation layer, a first conductive layer, and a first conductive bonding structure. The first passivation layer is disposed on the first substrate and has an upper surface. The first passivation layer and the first substrate define a first cavity. The first conductive layer is disposed in the first cavity and has an upper surface. A portion of the upper surface of the first conductive layer is below the upper surface of the first passivation layer. The first conductive bonding structure is disposed on the first conductive layer.