This method for producing a structure wherein base materials are bonded by atomic diffusion comprises: a step for applying a liquid resin on the base material; a step for smoothing the surface of the liquid resin by surface tension; a step for forming a resin layer by curing; a step for forming a metal thin film on the resin layer; a step for forming a metal thin film on the base material; and a step for bringing the metal thin film of the base material and the metal thin film of the base material into close contact with each other, thereby bonding the metal thin film of the resin layer and the metal thin film of the base material with each other by atomic diffusion

A semiconductor device assembly includes a substrate and a die coupled to the substrate, the die including a first contact pad electrically coupled to a first circuit on the die including an active circuit element, a first TSV electrically coupling the first contact pad to a first backside contact pad, and a second contact pad electrically coupled to a second circuit including only passive circuit elements. The substrate includes a substrate contact electrically coupled to the first and second contact pads. The assembly can further include a second die including a third contact pad electrically coupled to a third circuit including a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad, but electrically disconnected from the fourth contact pad.

The present invention relates to a semiconductor structure and method of forming the same. The semiconductor structure includes a first substrate, a first adhesive/bonding stack on the surface of first substrate, wherein the first adhesive/bonding stack includes at least one first adhesive layer and at least one first bonding layer. The material of first bonding layer includes dielectrics such as silicon, nitrogen and carbon, the material of first adhesive layer includes dielectrics such as silicon and nitrogen, and the first adhesive/bonding stack of semiconductor structure is provided with higher bonding force in bonding process.

The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer located on a surface of the first substrate. The material of the first bonding layer is a dielectric material containing element carbon (C). C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%. The first bonding layer of the semiconductor structure may be used to enhance bonding strength during bonding.

A first conductive material having a first hardness is disposed within a recess or opening of a microelectronic component, in a first preselected pattern, and forms a first portion of an interconnect structure. A second conductive material having a second hardness different from the first hardness is disposed within the recess or opening in a second preselected pattern and forms a second portion of the interconnect structure.

A first conductive material having a first hardness is disposed within a recess or opening of a microelectronic component, in a first preselected pattern, and forms a first portion of an interconnect structure. A second conductive material having a second hardness different from the first hardness is disposed within the recess or opening in a second preselected pattern and forms a second portion of the interconnect structure.

A semiconductor device may include: a semiconductor substrate; a surface electrode covering a surface of the semiconductor substrate; an insulating protection film covering a part of a surface of the surface electrode; and a solder-bonding metal film, the solder-bonding metal film covering a range spreading from a surface of the insulating protection film to the surface of the surface electrode, wherein the surface electrode may include: a first metal film provided on the semiconductor substrate; a second metal film being in contact with a surface of the first metal film, and having tensile strength higher than tensile strength of the first metal film; and a third metal film being in contact with a surface of the second metal film, and having tensile strength which is lower than the tensile strength of the second metal film and is higher than the tensile strength of the first metal film.

A semiconductor device assembly includes a substrate and a die coupled to the substrate, the die including a first contact pad electrically coupled to a first circuit on the die including an active circuit element, a first TSV electrically coupling the first contact pad to a first backside contact pad, and a second contact pad electrically coupled to a second circuit including only passive circuit elements. The substrate includes a substrate contact electrically coupled to the first and second contact pads. The assembly can further include a second die including a third contact pad electrically coupled to a third circuit including a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad, but electrically disconnected from the fourth contact pad.

A chip package including a substrate having an upper surface, a lower surface, and a sidewall surface that is at the edge of the substrate is provided. The substrate includes a sensor device therein and adjacent to the upper surface thereof. The chip package further includes light-shielding layer disposed over the sidewall surface of the substrate and extends along the edge of the substrate to surround the sensor device. The chip package further includes a cover plate disposed over the upper surface of the substrate and a spacer layer disposed between the substrate and the cover plate. A method of forming the chip package is also provided.

An electronic product includes a substrate and a bonding pad structure. The bonding pad structure is disposed on the substrate, and the bonding pad structure includes a first metal layer, a first insulating layer, at least one first connecting hole and a transparent conductive layer. The first metal layer and the first insulating layer are disposed on the substrate. The first connecting hole is situated in the first insulating layer, and the first connecting hole exposes a portion of the first metal layer. The transparent conductive layer is disposed on the first insulating layer, and the transparent conductive layer has a first edge and a second edge opposite to the first edge, wherein the transparent conductive layer is electrically connected to the first metal layer through the first connecting hole. A spacing between the first edge and the first connecting hole is greater than or equal to 100 m.