An electrical device includes a substrate, an insulating layer supported by the substrate, and an electrically conductive vertical interconnect disposed in a via hole of the insulating layer. The insulating layer may be configured to provide a coefficient of thermal expansion (CTE) that is equal to or greater than a CTE of the vertical interconnect to thereby impart axial compressive forces at opposite ends of the interconnect. The vertical interconnect may be a hybrid interconnect structure including a low CTE conductor post having a pocket that contains a high CTE conductor contact. At low operating temperatures, the high CTE conductor contact is under tension due to the higher CTE, and thus the high CTE conductor contact relieves strain in the device by void expansion and elongation.

Stacked devices and methods of fabrication are provided. Die-to-wafer (D2W) direct-bonding techniques join layers of dies of various physical sizes, form factors, and foundry nodes to a semiconductor wafer, to interposers, or to boards and panels, allowing mixing and matching of variegated dies in the fabrication of 3D stacked devices during wafer level packaging (WLP). Molding material fills in lateral spaces between dies to enable fan-out versions of 3D die stacks with fine pitch leads and capability of vertical through-vias throughout. Molding material is planarized to create direct-bonding surfaces between multiple layers of the variegated dies for high interconnect density and reduction of vertical height. Interposers with variegated dies on one or both sides can be created and bonded to wafers. Logic dies and image sensors from different fabrication nodes and different wafer sizes can be stacked during WLP, or logic dies and high bandwidth memory (HBM) of different geometries can be stacked during WLP.

Stacked devices and methods of fabrication are provided. Die-to-wafer (D2W) direct-bonding techniques join layers of dies of various physical sizes, form factors, and foundry nodes to a semiconductor wafer, to interposers, or to boards and panels, allowing mixing and matching of variegated dies in the fabrication of 3D stacked devices during wafer level packaging (WLP). Molding material fills in lateral spaces between dies to enable fan-out versions of 3D die stacks with fine pitch leads and capability of vertical through-vias throughout. Molding material is planarized to create direct-bonding surfaces between multiple layers of the variegated dies for high interconnect density and reduction of vertical height. Interposers with variegated dies on one or both sides can be created and bonded to wafers. Logic dies and image sensors from different fabrication nodes and different wafer sizes can be stacked during WLP, or logic dies and high bandwidth memory (HBM) of different geometries can be stacked during WLP.

A semiconductor device is disclosed including wafers of stacked integrated memory modules. A semiconductor device of the present technology may include multiple memory array semiconductor wafers, and a CMOS controller wafer, which together, operate as a single, integrated flash memory semiconductor device. In embodiments, the CMOS controller wafer may include semiconductor dies comprising ASIC logic circuits integrated together with memory array logic circuits.

A semiconductor device is disclosed including wafers of stacked integrated memory modules. A semiconductor device of the present technology may include multiple memory array semiconductor wafers, and a CMOS controller wafer, which together, operate as a single, integrated flash memory semiconductor device. In embodiments, the CMOS controller wafer may include semiconductor dies comprising ASIC logic circuits integrated together with memory array logic circuits.

Embodiments of molded packages and corresponding methods of manufacture are provided. In an embodiment of a molded package, the molded package includes a laser-activatable mold compound having a plurality of laser-activated regions which are plated with an electrically conductive material to form metal pads and/or metal traces at a first side of the laser-activatable mold compound. A semiconductor die embedded in the laser-activatable mold compound has a plurality of die pads. An interconnect electrically connects the plurality of die pads of the semiconductor die to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.

Embodiments of molded packages and corresponding methods of manufacture are provided. In an embodiment of a molded package, the molded package includes a laser-activatable mold compound having a plurality of laser-activated regions which are plated with an electrically conductive material to form metal pads and/or metal traces at a first side of the laser-activatable mold compound. A semiconductor die embedded in the laser-activatable mold compound has a plurality of die pads. An interconnect electrically connects the plurality of die pads of the semiconductor die to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.

The present disclosure provides a device die, a die assembly and an electronic system. The device die includes a package and a plurality of transfer pads disposed on a functional surface of the package. The transfer pads are divided into a plurality of segments electrically isolated from each other. In an adjacent pair of transfer pads, there is only one electrical connection between the transfer pads, comprising one segment in one transfer pad electrically connected to one segment in the other transfer pad. The die assembly includes a pair of device dies stacked in a stepped configuration. The electronic system includes a supporting member having at least one metallic layer, and a plurality of device dies disposed on the supporting member and mechanically and electrically coupled to the metallic layer by a plurality of conductive strings.

The present disclosure provides a device die, a die assembly and an electronic system. The device die includes a package and a plurality of transfer pads disposed on a functional surface of the package. The transfer pads are divided into a plurality of segments electrically isolated from each other. In an adjacent pair of transfer pads, there is only one electrical connection between the transfer pads, comprising one segment in one transfer pad electrically connected to one segment in the other transfer pad. The die assembly includes a pair of device dies stacked in a stepped configuration. The electronic system includes a supporting member having at least one metallic layer, and a plurality of device dies disposed on the supporting member and mechanically and electrically coupled to the metallic layer by a plurality of conductive strings.

A semiconductor device has a semiconductor chip region which contains a semiconductor chip and a first portion of a passivation film covering the semiconductor chip and a scribe line region which contains a second portion of the passivation film connected to the first portion of the passivation film, a first insulating film protruding from a distal end of the second portion of the passivation film, and at least a part of a first wiring. A first portion of the first insulating film is disposed along the distal end of the second portion of the passivation film, a second portion of the first insulating film protrudes laterally beyond the first portion of the first insulating film, and the first wiring protrudes laterally beyond the second portion of the first insulating film.