An integrated circuit device includes a memory including a memory cell insulation surrounding a memory stack and a memory cell interconnection unit, a peripheral circuit including a peripheral circuit region formed on a peripheral circuit board, and a peripheral circuit interconnection between the peripheral circuit region and the memory structure, a plurality of conductive bonding structures on a boundary between the memory cell interconnection and the peripheral circuit interconnection in a first region, the first region overlapping the memory stack in a vertical direction, and a through electrode penetrating one of the memory cell insulation and the peripheral circuit board and extended to a lower conductive pattern included in the peripheral circuit interconnection in a second region, the second region overlapping the memory cell insulation in the vertical direction.

A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer, an etch stop layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The etch stop layer includes silicon nitride and is disposed between the semiconductor substrate and the electrical insulating and thermal conductive layer. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

A wafer-to-wafer bonding structure includes a first wafer including a first conductive pad in a first insulating layer and a first barrier layer surrounding a lower surface and side surfaces of the first conductive pad, a second wafer including a second conductive pad in a second insulating layer and a second barrier layer surrounding a lower surface and side surfaces of the second conductive pad, the second insulating layer being bonded to the first insulating layer, and at least a portion of an upper surface of the second conductive pad being partially or entirely bonded to at least a portion of an upper surface of the first conductive pad, and a third barrier layer between portions of the first and second wafers where the first and second conductive pads are not bonded to each other.

A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

A representative device includes a patterned opening through a layer at a surface of a device die. A liner is disposed on sidewalls of the opening and the device die is patterned to extend the opening further into the device die. After patterning, the liner is removed. A conductive pad is formed in the device die by filling the opening with a conductive material.

Provided is a semiconductor structure including an interconnect structure, disposed over a substrate; a pad structure, disposed over and electrically connected to the interconnect structure, wherein the pad structure comprises a metal pad and a dielectric cap on the metal pad, and the pad structure has a probe mark recessed from a top surface of the dielectric cap into a top surface of the metal pad; a protective layer, conformally covering the top surface of the dielectric cap and the probe mark; and a bonding structure, disposed over the protective layer, wherein the bonding structure comprises: a bonding dielectric layer at least comprising a first bonding dielectric material and a second bonding dielectric material on the first bonding dielectric material; and a first bonding metal layer disposed in the bonding dielectric layer and penetrating through the protective layer and the dielectric cap to contact the metal pad.

Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method comprises forming a plurality of semiconductor devices over a central region of a semiconductor wafer. The semiconductor wafer comprises a peripheral region laterally surrounding the central region and a circumferential edge disposed within the peripheral region. The semiconductor wafer comprises a notch disposed along the circumferential edge. Forming a stack of inter-level dielectric (ILD) layers over the semiconductor devices and laterally within the central region. Forming a bonding support structure over the peripheral region such that the bonding support structure comprises a bonding structure notch disposed along a circumferential edge of the bonding support structure. Forming the bonding support structure includes disposing the semiconductor wafer over a lower plasma exclusion zone (PEZ) ring that comprises a PEZ ring notch disposed along a circumferential edge of the lower PEZ ring.

Structures and techniques provide bond enhancement in microelectronics by trapping contaminants and byproducts during bonding processes, and arresting cracks. Example bonding surfaces are provided with recesses, sinks, traps, or cavities to capture small particles and gaseous byproducts of bonding that would otherwise create detrimental voids between microscale surfaces being joined, and to arrest cracks. Such random voids would compromise bond integrity and electrical conductivity of interconnects being bonded. In example systems, a predesigned recess space or predesigned pattern of recesses placed in the bonding interface captures particles and gases, reducing the formation of random voids, thereby improving and protecting the bond as it forms. The recess space or pattern of recesses may be placed where particles collect on the bonding surface, through example methods of determining where mobilized particles move during bond wave propagation. A recess may be repeated in a stepped reticule pattern at the wafer level, for example, or placed by an aligner or alignment process.

Provided is packages and method of fabricating the same. The package includes a first die, a second die, and an inductor. The second die is bonded to the first die through a bonding structure thereof. The inductor is located in the bonding structure. The inductor includes a spiral pattern parallel to top surfaces of the first die and the second die, and the spiral pattern includes at least a turn.

A semiconductor device includes a first die, a second die on the first die, and a third die on the second die, the second die being interposed between the first die and the third die. The first die includes a first substrate and a first interconnect structure on an active side of the first substrate. The second die includes a second substrate, a second interconnect structure on a backside of the second substrate, and a power distribution network (PDN) structure on the second interconnect structure such that the second interconnect structure is interposed between the PDN structure and the second substrate.