A chip package includes a semiconductor structure and a redistribution layer. The semiconductor structure has a substrate, a first isolation layer, and a lower ground pad. The substrate has a top surface, a bottom surface opposite to the top surface, a through hole through the top surface and the bottom surface, and a sidewall surrounding the through hole. The first isolation layer is located on the top surface of the substrate, and the lower ground pad is located in the through hole. The redistribution layer extends from the bottom surface of the substrate to the lower ground pad along the sidewall. The redistribution layer covers the entire bottom surface of the substrate and electrically connects the lower ground pad.

Disclosed are semiconductor packages and/or methods of fabricating the same. The semiconductor package comprises a substrate, a semiconductor chip on the substrate, and a molding layer. The semiconductor chip includes a circuit region and an edge region around the circuit region. The molding layer covers a sidewall of the semiconductor chip. The semiconductor chip includes a reforming layer on the edge region. A top surface of the reforming layer is coplanar with a top surface of the molding layer.

The present disclosure relates to an electronic chip comprising a semiconductor substrate carrying at least one metal contact extending, within the thickness of the substrate, along at least one flank of the chip.

A method includes forming a first dielectric layer over a conductive pad, forming a second dielectric layer over the first dielectric layer, and etching the second dielectric layer to form a first opening, with a top surface of the first dielectric layer exposed to the first opening. A template layer is formed to fill the first opening. A second opening is then formed in the template layer and the first dielectric layer, with a top surface of the conductive pad exposed to the second opening. A conductive pillar is formed in the second opening.

A semiconductor package includes a semiconductor substrate, a conductive pad on the semiconductor substrate, a redistribution line conductor, a coating insulator, and an aluminum oxide layer. The redistribution line conductor is electrically connected to the conductive pad. The coating insulator covers the redistribution line conductor and partially exposes the redistribution line conductor. The aluminum oxide layer is provided below the coating insulator and extends along a top surface of the redistribution line conductor, and the aluminum oxide layer is in contact with the redistribution line conductor.

A semiconductor package may include a substrate including a first coupling terminal and a second coupling terminal, a first chip disposed on the substrate, the first chip including a first pad and a second pad, and a connection structure connecting the first coupling terminal to the first pad. A portion of the connection structure may be in contact with a first side surface of the first chip. The connection structure may include a connection conductor electrically connecting the first pad to the first coupling terminal.

A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include providing a carrier with a non-photosensitive protection layer, forming a pattern in the non-photosensitive protection layer, providing a semiconductor die with a contact pad on a first surface, and bonding the semiconductor die to the non-photosensitive protection layer such that the contact pad aligns with the pattern formed in the non-photosensitive protection layer. A second surface opposite to the first surface of the semiconductor die, side surfaces between the first and second surfaces of the semiconductor die, and a portion of a first surface of the non-photosensitive protection layer may be encapsulated with an encapsulant. The carrier may be removed leaving the non-photosensitive protection layer bonded to the semiconductor die. A redistribution layer may be formed on the contact pad and a second surface of the non-photosensitive protection layer opposite to the first surface.

An array substrate has a display area and a bonding area located on a side of the display area. The array substrate includes a base, a plurality of first transistors, a plurality of conductive pins and a plurality of conductive electrodes. The plurality of first transistors are disposed on a side of the base and located in the display area; a first transistor includes a first gate, a first source and a first drain. The plurality of conductive pins are disposed on the side of the base and located in the bonding area, and are disposed in a same layer as the first gate. The plurality of conductive electrodes are each disposed on a respective one of surfaces of the plurality of conductive pins away from the base.

A package comprising a substrate and an integrated device coupled to the substrate through a plurality of pillar interconnects and a plurality of solder interconnects. The plurality of pillar interconnects includes a first pillar interconnect comprising a first cavity. The plurality of solder interconnects comprises a first solder interconnect located in the first cavity of the first pillar interconnect. A planar cross section that extends through the first cavity of the first pillar interconnect may comprise an O shape. The first pillar interconnect comprises a first pillar interconnect portion comprising a first width; and a second pillar interconnect portion comprising a second width that is different than the first width.

A semiconductor structure includes: a substrate, a conductive pattern layer, a support layer and a re-distribution layer. The conductive pattern layer is arranged on the substrate. The support layer covers the conductive pattern layer and is provided with a via hole. The re-distribution layer is arranged on the support, and the re-distribution layer includes a test pad at least located in the via hole. The test pad includes a plurality of test contact portions and a plurality of recesses that are arranged alternately and connected mutually, and the recess is in corresponding contact with a portion of the conductive pattern layer in the via hole.