A method of manufacturing a semiconductor device is provided. The method includes forming a non-conductive layer over an active side of a semiconductor die partially encapsulated with an encapsulant. An opening in the non-conductive layer is formed exposing a portion of a bond pad of the semiconductor die. A laser ablated trench is formed at a surface of the non-conductive layer proximate to a perimeter of the opening. A bottom surface of the laser ablated trench is substantially roughened. An under-bump metallization (UBM) structure is formed over the bond pad and laser ablated trench.

A display panel and a manufacturing method thereof, and an electronic terminal are provided and including a driving circuit layer, a planarization layer, an electrode layer, and a light-emitting layer which are stacked from bottom to top. The driving circuit layer includes driving circuits. The planarization layer includes first planarization portions and second planarization portions which are arranged in a same layer. The electrode layer includes electrode groups. The light-emitting layer includes light-emitting devices. The first planarization portion is disposed on a side of the driving circuit close to the electrode layer, and the second planarization portion is disposed on a side of one of the electrode group close to the driving circuit layer. A thickness of the second planarization portion is greater than a thickness of the first planarization portion.

Disclosed is a semiconductor device suppressed in decrease of reliability. The semiconductor device comprises an electrode pad portion (2) formed on the upper surface of a semiconductor substrate (1), a passivation layer (3) so formed on the upper surface of the semiconductor substrate (1) as to overlap a part of the electrode pad portion (2) and having a first opening portion (3a) where the upper surface of the electrode pad portion (2) is exposed, a barrier metal layer (5) formed on the electrode pad portion (2), and a solder bump (6) formed on the barrier metal layer (5). The barrier metal layer (5) is formed such that an outer peripheral end (5b) lies within the first opening portion (3a) of the passivation layer (3) when viewed in plan.

Disclosed is a semiconductor device suppressed in decrease of reliability. The semiconductor device comprises an electrode pad portion (2) formed on the upper surface of a semiconductor substrate (1), a passivation layer (3) so formed on the upper surface of the semiconductor substrate (1) as to overlap a part of the electrode pad portion (2) and having a first opening portion (3a) where the upper surface of the electrode pad portion (2) is exposed, a barrier metal layer (5) formed on the electrode pad portion (2), and a solder bump (6) formed on the barrier metal layer (5). The barrier metal layer (5) is formed such that an outer peripheral end (5b) lies within the first opening portion (3a) of the passivation layer (3) when viewed in plan.

An interlayer insulating film is formed on an upper surface of a semiconductor substrate. A source pad and a kelvin pad, a gate pad, and a drain pad each having a smaller plane area than a plane area of the source pad are formed on the interlayer insulating film. A first plating layer is formed on the source pad. A second plating layer is formed on each of the kelvin pad, the gate pad, and the drain pad. A material of an uppermost surface of the first plating layer is a metal other than a noble metal, and a material of an uppermost surface of the second plating layer is a noble metal.

A display device includes a substrate including an opening hole, a first barrier insulating layer on the substrate, a plurality of first pad portions on the first barrier insulating layer and in a first contact hole partially penetrating the first barrier insulating layer, a second barrier insulating layer on the first barrier insulating layer and the plurality of first pad portions, a plurality of second pad portions on the second barrier insulating layer and in a second contact hole partially penetrating the first barrier insulating layer and the second barrier insulating layer, a third barrier insulating layer on the second barrier insulating layer and the plurality of second pad portions, a display layer on the third barrier insulating layer, and a flexible film under the substrate, and inserted into the opening hole to be electrically connected to the plurality of first and second pad portions.

A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.

According to one embodiment, semiconductor device includes a semiconductor layer, an electrode provided on the semiconductor layer, and a bonding wire connected to the electrode, wherein the electrode comprises a first metal layer containing copper, a second metal layer containing aluminum, provided between the first metal layer and the semiconductor layer, and a third metal layer provided between the first metal layer and the second metal layer, the third metal layer comprising a material different from those of the first metal layer and the second metal layer, and the thickness of the first metal layer is larger than the thickness of the second metal layer and larger than the thickness of the third metal layer.

A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.

A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.