A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The method includes: a base is provided, in which the base includes top layer silicon and bottom layer silicon; a device layer is formed on the top layer silicon of the base; a through via penetrating through the device layer and the top layer silicon and extending into the bottom layer silicon is formed; the through via is filled to form a conductive pillar; and preprocessing is performed on the bottom layer silicon of the base to expose the conductive pillar to form a Through Silicon Via (TSV), in which the bottom layer silicon is configured to block a metal contaminant generated in the preprocessing.

Methods for forming a semiconductor device structure are provided. The method includes providing a first semiconductor wafer and a second semiconductor wafer. A first transistor is formed in a front-side of the first semiconductor wafer, and no devices are formed in the second semiconductor wafer. The method further includes bonding the front-side of the first semiconductor wafer to a backside of the second semiconductor wafer and thinning a front-side of the second semiconductor wafer. After thinning the second semiconductor wafer, a second transistor is formed in the front-side of the second semiconductor wafer. At least one first through substrate via (TSV) is formed in the second semiconductor wafer, and the first TSV directly contacts a conductive feature of the first semiconductor wafer.

The present disclosure provides a method for manufacturing a semiconductor structure. The method includes providing a substrate having a redistribution layer (RDL); disposing an etch stop layer over a RDL; patterning the dielectric layer and the etch stop layer; disposing a first seed layer over the etch stop layer and a portion of the dielectric layer that is exposed through the etch stop layer; disposing a second patterned photoresist over the first seed layer; disposing a conductive material over a portion of the first seed layer that is exposed through the second patterned photoresist; removing the second patterned photoresist; removing the etch stop layer; and removing a portion of the conductive material that protrudes from the dielectric layer to form a bonding pad adjacent to the conductive plug and surrounded by the dielectric layer.

The present invention relates to structure and formation of side walls in micro devices. The structure allows access of one side of the micro device to another side through conductive layers and pads. In particular, the top and bottom sides of the micro devices are in direction of the current in the device and sidewalls are isolation surfaces surrounding the top and bottom sides of the device.

The present invention relates to structure and formation of side walls in micro devices. The structure allows access of one side of the micro device to another side through conductive layers and pads. In particular, the top and bottom sides of the micro devices are in direction of the current in the device and sidewalls are isolation surfaces surrounding the top and bottom sides of the device.

The present disclosure provides a semiconductor structure including a substrate; a redistribution layer (RDL) disposed over the substrate, and including a dielectric layer over the substrate, a conductive plug extending within the dielectric layer, and a bonding pad adjacent to the conductive plug and surrounded by the dielectric layer; and a conductive bump disposed over the conductive plug, wherein the bonding pad is at least partially in contact with the conductive plug and the conductive bump. Further, a method of manufacturing the semiconductor structure is also provided.

A semiconductor package includes main pad structures and dummy pad structures between a first semiconductor chip and a second semiconductor chip. The main pad structures include first main pad structures apart from one another on the first semiconductor chip and second main pad structures placed apart from one another on the second semiconductor chip and bonded to the first main pad structures. The dummy pad structures include first dummy pad structures including first dummy pads apart from one another on the first semiconductor chip and first dummy capping layers on the first dummy pads, and second dummy pad structures including second dummy pads apart from one another on the second semiconductor chip and second dummy capping layers on the second dummy pads. The first dummy capping layers of the first dummy pad structures are not bonded to the second dummy capping layers of the second dummy pad structures.

An electronic element for an electronic apparatus includes a substrate; a bump, disposed on the substrate for electrically connecting the electronic apparatus; and at least one under bump metal layer, disposed between the bump and the substrate for the bump to be attached to the substrate; wherein the UBM layer forms a breach structure.

An electroless nickel plating solution, including a source of nickel ions, a source of molybdenum ions, a source of tungsten ions, a source of hypophosphite ions at least one complexing agent, at least one organic sulphur containing compound in a concentration of 0.38-38.00 μmol/L, and at least one amino acid in a concentration of 0.67-40.13 mmol/L, and
a method for electroless plating of a nickel alloy layer on a substrate, a nickel alloy layer, and
an article comprising the a nickel alloy layer.

A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.