The present application discloses a semiconductor device. The semiconductor device includes a package structure including a first side and a second side opposite to the first side; an interposer structure positioned over the first side of the package structure; a first die positioned over the interposer structure; a second die positioned over the interposer structure; and a plurality of middle interconnectors positioned between the first side of the package structure and the first die and between the first side of the package structure and the second die. The plurality of middle interconnectors respectively includes a middle exterior layer positioned between the first side of the package structure and the interposer structure, a middle interior layer enclosed by the middle exterior layer, and a cavity enclosed by the interposer structure, the package structure, and the middle interior layer.

A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.

A bonding pad layer system is deposited on a semiconductor chip as a base, for example, a micromechanical semiconductor chip, in which at least one self-supporting dielectric membrane made up of dielectric layers, a platinum conductor track and a heater made of platinum is integrated. In the process, the deposition of a tantalum layer takes place first, upon that the deposition of a first platinum layer, upon that the deposition of a tantalum nitride layer, upon that the deposition of a second platinum layer and upon that the deposition of a gold layer, at least one bonding pad for connecting with a bonding wire being formed in the gold layer. The bonding pad is situated in the area of the contact hole on the semiconductor chip, in which a platinum conductor track leading to the heater is connected using a ring contact and/or is connected outside this area.

Disclosed embodiments include a semiconductor chip including a semiconductor substrate having a top surface with a top connection pad disposed therein, and a protection insulation layer comprising an opening therein, the protection insulation layer not covering at least a portion of the top connection pad, on the semiconductor substrate. The protection insulation layer may include: a bottom protection insulation layer, a cover insulation layer comprising a side cover part that covers at least a portion of a side surface of the bottom protection insulation layer and a top cover part disposed apart from the side cover part to cover at least a portion of a top surface of the bottom protection insulation layer. The protection insulation layer may further include a top protection insulation layer on the top cover part.

Provided is an array substrate. The array substrate includes at least one pad group disposed in a peripheral region of a base substrate, wherein the at least one pad group includes a sector pad group in which the pads are distributed in a sector shape. Therefore, the bonding yield between the array substrate and the circuit board is increased.

A method of manufacturing an integrated fan-out (InFO) package includes at least the following steps. A package array is formed. A core layer and a dielectric layer are sequentially stacked over the package array. The core layer includes a plurality of cavities. A plurality of first conductive patches is formed on the dielectric layer above the cavities.

A semiconductor package includes a semiconductor chip comprising a first surface and a second surface, a redistribution layer on the first surface of the semiconductor chip, an under bump metal (UBM) layer on the redistribution layer, and a solder bump on the UBM layer, and the solder bump covers both outer side surfaces of the UBM layer.

A semiconductor wafer is singulated to form a plurality of semiconductor packages. The semiconductor wafer has a semiconductor substrate, a metal layer, an adhesive layer, a rigid supporting layer, a passivation layer and a plurality of contact pads. A semiconductor package has a semiconductor substrate, a metal layer, an adhesive layer, a rigid supporting layer, a passivation layer and a plurality of contact pads. A thickness of the rigid supporting layer is larger than a thickness of the semiconductor substrate. A thickness of the metal layer is thinner than the thickness of the semiconductor substrate. An entirety of the rigid supporting layer may be made of a single crystal silicon material or a poly-crystal silicon material. The single crystal silicon material or the poly-crystal silicon material may be fabricated from a reclaimed silicon wafer. An advantage of using a reclaimed silicon wafer is for a cost reduction.

Disclosed embodiments include a semiconductor chip including a semiconductor substrate having a top surface with a top connection pad disposed therein, and a protection insulation layer comprising an opening therein, the protection insulation layer not covering at least a portion of the top connection pad, on the semiconductor substrate. The protection insulation layer may include: a bottom protection insulation layer, a cover insulation layer comprising a side cover part that covers at least a portion of a side surface of the bottom protection insulation layer and a top cover part disposed apart from the side cover part to cover at least a portion of a top surface of the bottom protection insulation layer. The protection insulation layer may further include a top protection insulation layer on the top cover part.

A semiconductor package comprises a semiconductor substrate, a first metal layer, an adhesive layer, a second metal layer, a rigid supporting layer, and a plurality of contact pads. A thickness of the semiconductor substrate is equal to or less than 50 microns. A thickness of the rigid supporting layer is larger than the thickness of the semiconductor substrate. A thickness of the second metal layer is larger than a thickness of the first metal layer. A method comprises the steps of providing a device wafer; providing a supporting wafer; attaching the supporting wafer to the device wafer via an adhesive layer; and applying a singulation process so as to form a plurality of semiconductor packages.