The present disclosure provides a three-dimensional packaging method and a three-dimensional package structure of a photonic-electronic chip. The method includes: fixing an electronic chip on a first area of a first surface of a photonic chip; fixing a dummy chip on a second area of the first surface of the photonic chip, wherein the photonic chip is provided with an optical coupling interface at the second area, and the dummy chip has a cavity with a single-sided opening, and the opening of the cavity faces and covers an optical coupling interface.

An optoelectronic component includes a radiation side, a contact side opposite the radiation side having at least two electrically conductive contact elements, and a semiconductor layer sequence having an active layer that emits or absorbs the electromagnetic radiation, wherein the at least two electrically conductive contact elements have different polarities, are spaced apart from each other and are completely or partially exposed at the contact side in an unmounted state of the optoelectronic component, a region of the contact side is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m.Math.K), and in a plan view of the contact side, the cooling element partially covers one or both of the at least two electrically conductive contact elements.

A method of manufacturing an integrated electronic device including a semiconductor body and a passivation structure including a frontal dielectric layer bounded by a frontal surface. A hole is formed extending into the frontal surface and through the frontal dielectric layer. A conductive region is formed in the hole. A barrier layer is formed in the hole and extends into the hole. A first coating layer covers a top and sides of a redistribution region of the conductive region and a second coating layer covers is formed covering the first coating layer. A capillary opening is formed extending into the first and second coating layers to the barrier layer. A cavity is formed between the redistribution region and the frontal surface and is bounded on one side by the first coating layer and on the other by the barrier structure by passing an aqueous solution through the capillary opening.

Disclosed is a semiconductor device comprising a semiconductor substrate, a conductive pad on a first surface of the semiconductor substrate, a passivation layer on the first surface of the semiconductor substrate, the passivation layer having a first opening that exposes the conductive pad, an organic dielectric layer on the passivation layer, the organic dielectric layer having a second opening, and a bump structure on the conductive pad and in the first and second openings. The organic dielectric layer includes a material different from a material of the passivation layer. The second opening is spatially connected to the first opening and exposes a portion of the passivation layer. The bump structure includes a pillar pattern in contact with the passivation layer and the organic dielectric layer.

Provided is a semiconductor device, an imaging device, and a manufacturing apparatus, capable of providing a semiconductor substrate maintaining and improving insulating performance. A through hole that penetrates the semiconductor substrate, an electrode at the center of the through hole, and a space around the electrode are included. The through hole also penetrates an insulating film formed on the semiconductor substrate. A barrier metal is further included around the electrode. An insulating film is further included in the semiconductor substrate and the space. The semiconductor device has a multilayer structure, and the electrode connects wirings formed in different layers to each other.

A semiconductor package includes: a first thermal pillar disposed on a package substrate, and having an opening; a first chip stack disposed on the package substrate and in the opening of the first thermal pillar, and including a first lateral surface; a semiconductor chip disposed on the package substrate and in the opening, wherein the semiconductor chip is spaced apart from the first chip stack; and a first heat transfer film disposed between the first thermal pillar and the first lateral surface of the first chip stack.

Three-dimensional integrated circuit structures are disclosed. A three-dimensional integrated circuit structure includes a first die, a second die and a device-free die. The first die includes a first device. The second die includes a second device and is bonded to the first die. The device-free die is located aside the second die and is bonded to the first die. The device-free die includes a conductive feature electrically connected to the first die and the second die.

In an embodiment, a device includes: a first die array including first integrated circuit dies, orientations of the first integrated circuit dies alternating along rows and columns of the first die array; a first dielectric layer surrounding the first integrated circuit dies, surfaces of the first dielectric layer and the first integrated circuit dies being planar; a second die array including second integrated circuit dies on the first dielectric layer and the first integrated circuit dies, orientations of the second integrated circuit dies alternating along rows and columns of the second die array, front sides of the second integrated circuit dies being bonded to front sides of the first integrated circuit dies by metal-to-metal bonds and by dielectric-to-dielectric bonds; and a second dielectric layer surrounding the second integrated circuit dies, surfaces of the second dielectric layer and the second integrated circuit dies being planar.

A display panel includes a substrate having a first surface and a second surface opposite to the first surface, a first pixel circuit arranged on the first surface of the substrate, a first through electrode passing through the substrate and being connected to the first pixel circuit, a first pad electrode arranged on the second surface of the substrate and being connected to the first through electrode, a common electrode arranged on the first surface of the substrate and arranged on the first pixel circuit, a second through electrode passing through the substrate and being connected to the common electrode, and a second pad electrode arranged on the second surface of the substrate and being connected to the second through electrode.

A semiconductor package includes: a package substrate; a first re-distribution layer disposed on the package substrate; a second re-distribution layer disposed between the package substrate and the first re-distribution layer; a connection substrate interposed between the first re-distribution layer and the second re-distribution layer, wherein a connection hole penetrates the connection substrate; a first semiconductor chip mounted on a first surface of the first re-distribution layer; a first connection chip mounted on a second surface, opposite to the first surface, of the first re-distribution layer and disposed in the connection hole; a second connection chip mounted on a first surface of the second re-distribution layer and disposed in the connection hole; and a first lower semiconductor chip mounted on a second surface, opposite to the first surface, of the second re-distribution layer.