A structure with controlled capillary coverage is provided and includes a substrate including one or more first contacts, a component and adhesive. The component includes one or more second contacts and a rib disposed at a distance from each of the one or more second contacts. The component is disposed such that the one or more second contacts are communicative with the one or more first contacts and corresponding surfaces of the substrate and the rib face each other at a controlled gap height to define a fill-space. The adhesive is dispensed at a discrete point whereby the adhesive is drawn to fill the fill-space by capillary action.

A structure with controlled capillary coverage is provided and includes a substrate including one or more first contacts, a component and adhesive. The component includes one or more second contacts and a rib disposed at a distance from each of the one or more second contacts. The component is disposed such that the one or more second contacts are communicative with the one or more first contacts and corresponding surfaces of the substrate and the rib face each other at a controlled gap height to define a fill-space. The adhesive is dispensed at a discrete point whereby the adhesive is drawn to fill the fill-space by capillary action.

A semiconductor memory device includes first column line pads, having a longer width and a shorter width, defined on one surface of a cell wafer, and coupled to a memory cell array of the cell wafer; second column line pads, having a longer width and a shorter width, defined on one surface of a peripheral wafer that is bonded to the one surface of the cell wafer, coupled to a page buffer circuit of the peripheral wafer, and bonded respectively to the first column line pads; first row line pads defined on the one surface of the cell wafer, and coupled to the memory cell array; and second row line pads defined on the one surface of the peripheral wafer, coupled to a row decoder of the peripheral wafer, and bonded respectively to the first row line pads. The longer widths of the first and second column line pads and the longer widths of the first and second row line pads extend in the same direction.

Multi-chip modules may include stacked semiconductor devices having spacers therebetween. Discrete conductive elements may extend over the active surface of an underlying semiconductor device from respective bond pads of the underlying semiconductor device, through a space formed by the spacers, to respective contact areas on a substrate. Each discrete conductive element extending through two side openings opposite one another may extend from a respective centrally located bond pad proximate to a central portion of the active surface of the underlying semiconductor device. Each discrete conductive element extending through another, perpendicular opening may extend from a respective peripheral bond pad located proximate to a peripheral portion of the active surface of the underlying semiconductor device.

The invention provides an array substrate and chip bonding method, the array substrate comprising: an active area, and a bonding area located around the active area, wherein the bonding area is provided with an input terminal group, a first output terminal group and a second output terminal a group; the first output terminal group is located at a side of the input terminal group away from the active area, and the second output terminal group is located between the first output terminal group and the input terminal group; when bonding chips, the first output terminal group or the second output terminal group is selected to cooperate with the input terminal group for chip bonding according to the chip type. By simultaneously providing the first and second output terminal groups, the bonding of the second type chip increases the distance between the chip and the edge of the array substrate.

Semiconductor devices are disclosed. According to some embodiments, a semiconductor device may include a memory array area and a peripheral area. The memory array area may include a number of memory cells and a number of array pads configured to receive an input voltage. The peripheral area may include a number of peripheral pads for interfacing with the memory array area. In these or other embodiments, the peripheral area may be arranged adjacent to a first edge of the semiconductor device and the number of array pads may be arranged proximate to a second edge of the semiconductor device. The second edge may be perpendicular to the first edge. The memory array area may also include an array distribution conductor configured to variously electrically connect the number of memory cells to the number of array pads. A semiconductor-device package and system are also disclosed.

Semiconductor devices are disclosed. According to some embodiments, a semiconductor device may include a memory array area and a peripheral area. The memory array area may include a number of memory cells and a number of array pads configured to receive an input voltage. The peripheral area may include a number of peripheral pads for interfacing with the memory array area. In these or other embodiments, the peripheral area may be arranged adjacent to a first edge of the semiconductor device and the number of array pads may be arranged proximate to a second edge of the semiconductor device. The second edge may be perpendicular to the first edge. The memory array area may also include an array distribution conductor configured to variously electrically connect the number of memory cells to the number of array pads. A semiconductor-device package and system are also disclosed.

A chip includes: a chip substrate including a central area and an edge area surrounding the central area; and a plurality of pads arranged on the chip substrate, the plurality of pads including a first pad and a second pad, wherein the first pad is arranged in the edge area and includes at least one straight side adjacent to a side of the chip substrate, and the second pad is arranged in the central area.

Provided is a semiconductor integrated circuit device including a plurality of columns of IO cells and having a configuration capable of reducing wiring delays without causing an increase in the area. The semiconductor integrated circuit device includes a first IO cell column group including an IO cell column closest to a periphery of a chip, and a second IO cell column group including an IO cell column adjacent to the first IO cell column group at the side closer to the core region. At least one of the first IO cell column group or the second IO cell column group includes two or more IO cell columns, and the two or more IO cell columns are aligned in the second direction such that the lower power supply voltage regions face each other or the higher power supply voltage regions face each other.

Apparatus and methods are provided for bond bads layout and structure of semiconductor dies. According to various aspects of the subject innovation, the provided techniques may provide a semiconductor die that may comprise an outer bond pad elongated in a first direction parallel to an edge of the semiconductor die and an inner bond pad elongated in a second direction perpendicular to the edge of the semiconductor die. The outer bond pad may have a probing area and two wire bond areas aligned in the first direction and the inner bond pad may have one probing area and one wire bond area aligned in the second direction. The outer bond pad may be positioned closer to the edge of the semiconductor die than the inner bond pad.