The present disclosure relates to a chip, a circuit board and an electronic device. The chip includes a chip substrate and a plurality of pads arrayed on the chip substrate. At least one of the plurality of pads on the chip is a polygonal pad.

A three-dimensional integrated circuit includes a first die structure having a first geometry. The first die structure includes a first region that operates with a first power density and a second region that operates with a second power density. The first power density is less than the second power density. The three-dimensional integrated circuit includes a second die structure having a second geometry. A stacked portion of the second die structure is aligned with the first region. The three-dimensional integrated circuit includes an additional die structure stacked with the first die structure and the second die structure. The additional die structure has the first geometry or the second geometry.

A method includes forming a plurality of dielectric layers over a semiconductor substrate, forming a plurality of metal lines and vias in the plurality of dielectric layers, forming a lower portion of an inner seal ring and a lower portion of an outer seal ring extending into the plurality of dielectric layers, depositing a first dielectric layer over the plurality of metal lines and vias, and etching the first dielectric layer to form an opening penetrating through the first dielectric layer. After the first dielectric layer is etched, a top surface of the lower portion of the inner seal ring is exposed, and an entire topmost surface of the lower portion of the outer seal ring is in contact with a bottom surface of the first dielectric layer. An upper portion of the inner seal ring is then formed to extend into the opening and to join the lower portion of the inner seal ring. A second dielectric layer is deposited to cover the upper portion of the inner seal ring.

A package includes a corner, a device die, a plurality of redistribution lines underlying the device die, and a plurality of non-solder electrical connectors underlying and electrically coupled to the plurality of redistribution lines. The plurality of non-solder electrical connectors includes a corner electrical connector. The corner electrical connector is elongated. An electrical connector is farther away from the corner than the corner electrical connector, wherein the electrical connector is non-elongated.

A method for manufacturing a three-dimensional integrated circuit includes attaching a first side of a first die to a first carrier wafer. The method includes preparing a second side of the first die to generate a prepared second side of the first die. The method includes attaching the prepared second side of the first die to a second carrier wafer. The method includes removing the first carrier wafer from the first side of the first die to form a transitional three-dimensional integrated circuit. The method includes attaching a third carrier wafer to a first side of the transitional three-dimensional integrated circuit. The method includes attaching a first side of the second die to a second side of the transitional three-dimensional integrated circuit.

A package structure of a semiconductor device includes a first substrate, a second substrate, and a bonding layer. The bonding layer bonds the first substrate and the second substrate. The bonding layer includes an inner bonding pad pattern and an outer bonding pad pattern formed in a dielectric layer. The outer bonding pad pattern surrounds the inner bonding pad pattern. A first bonding pad density of the outer bonding pad pattern is greater than a second bonding pad density of the inner bonding pad pattern.

A chip package structure is provided. The chip package structure includes a substrate. The chip package structure includes a chip over the substrate. The chip package structure includes a first bump and a first dummy bump between the chip and the substrate. The first bump is electrically connected between the chip and the substrate, the first dummy bump is electrically insulated from the substrate, the first dummy bump is between the first bump and a corner of the chip, and the first dummy bump is wider than the first bump.

A semiconductor structure includes a first substrate, a plurality of first bonding pads disposed in the first dielectric layer, a plurality of second bonding pads disposed in the first dielectric layer, a second substrate, and a dielectric layer between the first substrate and the second substrate. The first bonding pads have a first width, and the second bonding pads have a second width greater than the first width. The second width is greater than the first width. The second bonding pads are arranged to form a frame pattern surrounding the first bonding pads. The first bonding pads and the second bonding pads are arranged to form a plurality of columns and a plurality of rows. Two of the second bonding pads are disposed at two opposite ends of each column and two opposite ends of each row.

A surface mounting semiconductor component includes a semiconductor device, a circuit board, a number of first solder bumps, and a number of second solder bumps. The semiconductor device included a number of die pads. The circuit board includes a number of contact pads. The first solder bumps are configured to bond the semiconductor device and the circuit board. Each of the first solder bumps connects at least two die pads with a corresponding contact pad. Each of the second solder bumps connects a die pad with a corresponding contact pad.

A chip includes: a chip substrate including a central area and an edge area surrounding the central area; and a plurality of pads arranged on the chip substrate, the plurality of pads including a first pad and a second pad, wherein the first pad is arranged in the edge area and includes at least one straight side adjacent to a side of the chip substrate, and the second pad is arranged in the central area.