A multi-layer semiconductor structure includes a first semiconductor structure and a second semiconductor structure, with at least one of the first and second semiconductor structures provided as a superconducting semiconductor structure. The multi-layer semiconductor structure also includes one or more interconnect structures. Each of the interconnect structures is disposed between the first and second semiconductor structures and coupled to respective ones of interconnect pads provided on the first and second semiconductor structures. Additionally, each of the interconnect structures includes a plurality of interconnect sections. At least one of the interconnect sections includes at least one superconducting and/or a partially superconducting material.

An electronic component includes a leadframe and a first semiconductor die. The leadframe includes a leadframe top side, a leadframe bottom side opposite the leadframe top side, and a top notch at the leadframe top side. The top notch includes a top notch base located between the leadframe top side and the leadframe bottom side, and defining a notch length of the top notch, and can also include a top notch first sidewall extended, along the notch length, from the leadframe top side to the top notch base. The first semiconductor die can include a die top side a die bottom side opposite the die top side and mounted onto the leadframe top side, and a die perimeter. The top notch can be located outside the die perimeter. Other examples and related methods are also disclosed herein.

A semiconductor storage device includes first and second chips and first and second power supply electrodes. The first chip includes conductive layers arranged in a first direction, a semiconductor pillar extending in the first direction and facing the conductive layers, first contacts extending in the first direction and connected to the conductive layers, second contacts extending in the first direction and connected to a first power supply electrode, third contacts extending in the first direction, facing the second contacts in a direction crossing the first direction, and connected to the second power supply electrode, and first bonding electrodes connected to the first contacts. The second chip includes a semiconductor substrate, transistors provided on the semiconductor substrate, fourth contacts connected to the transistors, and second bonding electrodes connected to the fourth contacts. The first and second chips are bonded together so that respective first and second bonding electrodes are connected together.

Provided is a semiconductor package including an interposer. The semiconductor package includes: a package base substrate; a lower redistribution line structure disposed on the package base substrate and including a plurality of lower redistribution line patterns; at least one interposer including a plurality of first connection pillars spaced apart from each other on the lower redistribution line structure and connected respectively to portions of the plurality of lower redistribution line patterns, and a plurality of connection wiring patterns; an upper redistribution line structure including a plurality of upper redistribution line patterns connected respectively to the plurality of first connection pillars and the plurality of connection wiring patterns, on the plurality of first connection pillars and the at least one interposer; and at least two semiconductor chips adhered on the upper redistribution line structure while being spaced apart from each other.

A semiconductor device has a substrate, a first circuit, a first inductor, a second circuit and a second inductor IND2. The substrate includes a first region and a second region, which are regions different from each other. The first circuit is formed on the first region. The first inductor is electrically connected with the first circuit. The second circuit is formed on the second regions. The second inductor is electrically connected with the second circuit and formed to face the first inductor. A penetrating portion is formed in the substrate. The penetrating portion is formed such that the penetrating portion surrounds one or both of the first circuit and the second circuit in plan view.

Implementations of semiconductor packages may include a die having a first side and a second side opposite the first side, a first metal layer coupled to the first side of the die, a tin layer coupled to the first metal layer, the first metal layer between the die and the tin layer, a backside metal layer coupled to the second side of the die, and a mold compound coupled to the die. The mold compound may cover a plurality of sidewalls of the first metal layer and a plurality of sidewalls of the tin layer and a surface of the mold compound is coplanar with a surface of the tin layer.

A power module includes at least two power units. Each power unit includes at least one power semiconductor and a substrate. In order to reduce the installation space required for the power module and to improve cooling, the at least one power semiconductor is connected, in particular in a materially bonded manner, to the substrate. The substrates of the at least two power units are each directly connected in a materially bonded manner to a surface of a common heat sink. A power converter having at least one power module is also disclosed.

The semiconductor device includes a semiconductor element, a first lead, and a second lead. The semiconductor element has an element obverse surface and an element reverse surface spaced apart from each other in a thickness direction. The semiconductor element includes an electron transit layer disposed between the element obverse surface and the element reverse surface and formed of a nitride semiconductor, a first electrode disposed on the element obverse surface, and a second electrode disposed on the element reverse surface and electrically connected to the first electrode. The semiconductor element is mounted on the first lead, and the second electrode is joined to the first lead. The second lead is electrically connected to the first electrode. The semiconductor element is a transistor. The second lead is spaced apart from the first lead and is configured such that a main current to be subjected to switching flows therethrough.

A power electronic assembly includes a board having metal layers laminated onto or between electrically insulating layers, and a laminate inlay embedded in the board. A first metal layer provides electrical contacts at a first side of the board. A second metal layer provides a thermal contact at a second side of the board. A third metal layer is positioned between the first metal layer and the laminate inlay and configured to distribute a load current switched by the laminate inlay. A fourth metal layer is positioned between the second metal layer and the laminate inlay and configured as a primary thermal conduction path for heat generated by the laminate inlay during switching of the load current. A first electrically insulating layer separates the fourth metal layer from the second metal layer so that the fourth metal layer is electrically isolated from but thermally connected to the second metal layer.

A method for manufacturing a semiconductor package may include: forming a photoimageable dielectric layer on a substrate including a pad; forming a preliminary via hole in the photoimageable dielectric layer to expose the pad; forming a hard mask layer on the photoimageable dielectric layer and the pad; etching the photoimageable dielectric layer and the hard mask layer to form a via hole, a first hole, and a trench; forming a metal layer on the photoimageable dielectric layer connected to the pad; planarizing the metal layer to form a wiring pattern; and placing a semiconductor chip electrically connected to the wiring pattern. The first hole may be disposed on the via hole and connected thereto, and a diameter of the first hole may be larger than a diameter of the via hole.