Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. First conductive interconnect structures are bonded at ambient temperatures to second conductive interconnect structures using direct bonding techniques, with the fill layers in the recesses in one or both of the first and second interconnect structures.

In an embodiment, a device includes: an integrated circuit die having a first side and a second side opposite the first side; a die stack on the first side of the integrated circuit die; a dummy semiconductor feature on the first side of the integrated circuit die, the dummy semiconductor feature laterally surrounding the die stack, the dummy semiconductor feature electrically isolated from the die stack and the integrated circuit die; a first adhesive disposed between the die stack and the dummy semiconductor feature; and a plurality of conductive connectors on the second side of the integrated circuit die.

In an embodiment, a device includes: an integrated circuit die having a first side and a second side opposite the first side; a die stack on the first side of the integrated circuit die; a dummy semiconductor feature on the first side of the integrated circuit die, the dummy semiconductor feature laterally surrounding the die stack, the dummy semiconductor feature electrically isolated from the die stack and the integrated circuit die; a first adhesive disposed between the die stack and the dummy semiconductor feature; and a plurality of conductive connectors on the second side of the integrated circuit die.

A method and apparatus are provided that includes an integrated circuit die having an in-chip heat sink, along with an electronic device and a chip package having the same, and methods for fabricating the same. In one example, an integrated circuit die has an in-chip heat sink that separates a high heat generating integrated circuit from another integrated circuit disposed within the die. The in-chip heat sink provides a highly conductive heat transfer path from interior portions of the die to at least one exposed die surface.

Thermal heat spreaders and/or an IC die with solderable thermal structures may be assembled together with a solder array thermal interconnects. A thermal heat spreader may include a non-metallic material and one or more metallized surfaces suitable for bonding to a solder alloy employed as thermal interface material between the heat spreader and an IC die. An IC die may include a metallized back-side surface similarly suitable for bonding to a thermal interconnect comprising a solder alloy. Metallization on the IC die and/or heat spreader may comprise a plurality of solderable structures. A multi-chip package may include multiple IC die having different die thickness that are accommodated by a z-height thickness variation in the thermal interconnects and/or the solderable structures of the IC die or heat spreader.

Semiconductor devices including electrically-isolated extensions and associated systems and methods are disclosed herein. An electrically-isolated extension may be coupled to a corresponding connection pad that is attached to a surface of a device. The electrically-isolated extensions may extend at least partially through one or more layers at or near the surface and toward a substrate or an inner portion thereof.

A stack semiconductor package including a base chip, at least two semiconductor chips stacked on the base chip, and a sealing material sealing the at least two semiconductor chips on the base chip may be provided. The at least two semiconductor chips may include an uppermost semiconductor chip and at least one under the uppermost semiconductor chip, the first semiconductor chip includes through electrodes at a central portion thereof along a first direction, the through electrodes arranged along a second direction perpendicular to the first direction, upper dummy pads on outer portions of a back side of the first semiconductor chip, the outer portions being a non-active surface of the first semiconductor chip and being at both sides of the central portion in the first direction, and a dummy pattern connecting the upper dummy pads with each other on the back side.

A semiconductor package includes a first semiconductor chip on a wiring structure, a plurality of internal terminals between the wiring structure and the first semiconductor chip; a high thermal conductivity layer is between the wiring structure and the first semiconductor chip; and an encapsulator on the high thermal conductivity layer and contacting the second semiconductor chip. Sidewalls of at least the wiring structure and the encapsulator are substantially coplanar.

Semiconductor devices including one or more interfacing segments patterned within an outer protective layer and associated systems and methods are disclosed herein. The one or more interfacing segments may provide attachment interfaces/surfaces for connection pads. The one or more interfacing segments or a portion thereof may remain uncovered or exposed and provide warpage control for the corresponding semiconductor device.

A stacked device includes a stacked structure in which a plurality of semiconductors are electrically connected to each other, the semiconductor includes a surface on which a plurality of terminals are provided, the plurality of terminals include a terminal that bonds and electrically connects the semiconductors to each other and a terminal that bonds the semiconductors to each other and does not electrically connect the semiconductors to each other, an area ratio of the plurality of terminals on the surface of the semiconductor is 40% or higher, and an area ratio of the terminals that bond and electrically connect the semiconductors to each other among the plurality of terminals is lower than 50%.