H01L2224/08055

POWER SEMICONDUCTOR MODULE

A power semiconductor module including a positive-side switching device and a positive-side diode device which are mounted on a positive-side conductive pattern, and a negative-side switching device and a negative-side diode device which are mounted on an output-side conductive pattern. When an insulating substrate is viewed in plan view, the positive-side diode device and the negative-side diode device are disposed between the positive-side switching device and the negative-side switching device, and the negative-side diode device is disposed closer to the positive-side switching device than the positive-side diode device is.

POWER SEMICONDUCTOR MODULE AND METHOD OF PRODUCING A POWER SEMICONDUCTOR MODULE
20250006601 · 2025-01-02 ·

A power semiconductor module includes an AC bus bar having a first side that faces a first substrate and a second side that faces a second substrate. A first power transistor die has a drain terminal connected to a first metallic region of the first substrate and a source terminal connected to the first side of the AC bus bar. A second power transistor die has a drain terminal connected to the second side of the AC bus bar and a source terminal connected to a first metallic region of the second substrate. First and second DC bus bars are connected to the first metallic region of the respective substrates, vertically overlap one another, and protrude from a first side of a mold body that encapsulates the power transistor dies. The AC bus bar protrudes from a different side of the mold body as the DC bus bars.

Semiconductor device

A semiconductor device includes a plurality of semiconductor devices, a plurality of metal lines electrically connected to at least one of the semiconductor devices, and a protective layer on the metal lines. The protective layer includes a plurality of open areas partially exposing the metal lines and which serves as pads. A first pad includes a first area that extends from at least one of the metal lines and at least one second area around and separated from the first area.

Semiconductor package
12381184 · 2025-08-05 · ·

A semiconductor package includes a package substrate having a first side portion adjacent to a first edge, and a second side portion adjacent to a second edge opposite the first edge; a plurality of first substrate pads on the package substrate at the first side portion of the package substrate; a first chip on the package substrate; a second chip stacked on the first chip in a step-wise manner to result in a first exposure region exposing a portion of a surface of the first chip with respect to the second chip due to the step-wise stacking, the first exposure region being adjacent to a first edge of the first chip; a plurality of first bonding pads on a first portion of the first exposure region, the first portion of the first exposure region being adjacent to the first edge of the first chip; a plurality of second bonding pads on a second portion of the first exposure region, the second portion of the first exposure region further from the first edge of the first chip than the first portion of the first exposure region is to the first edge of the first chip, the plurality of second bonding pads being electrically insulated from any circuit components in the first chip; a plurality of third bonding pads on a surface of the second chip; and a plurality of bonding wires electrically connecting the third bonding pads to the first substrate pads via the second bonding pads.

Semiconductor package and method of fabricating the same
12400985 · 2025-08-26 · ·

Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises semiconductor chips stacked on a substrate and including first and second pads on top surfaces thereof, and bonding wires connecting the first and second pads to the substrate. The semiconductor chips alternately protrude in a first direction and its opposite direction. The semiconductor chip has a first lateral surface spaced apart from another semiconductor chip. The top surface of the semiconductor chip is provided thereon with a first arrangement line extending along the first lateral surface and with second arrangement lines extending from opposite ends of the first arrangement line. Wherein as a distance between the first and second arrangement lines increases, a distance between the second arrangement lines and the first lateral surface increases. The first pads are arranged along the first arrangement line. The second pads are arranged along the second arrangement lines.

Electronic component

Provided is an electronic component capable of reducing a possibility that insulating layers covering from outer edge portions of electrodes to surrounding portions, around the electrodes, of a substrate are separated from the electrodes and the substrate. An electronic component includes: a substrate; an electrode formed on a surface of the substrate; a protective portion covering at least a part of a peripheral portion of the electrode and a surrounding portion, around the electrode, of the surface of the substrate, across outer edge portions of the electrode, and extending in a circumferential direction along the outer edge portions of the electrode; and an extending portion extending, on the surface of the substrate, from the protective portion in an extending direction away from the electrode. A width of the extending portion perpendicular to the extending direction is longer than a width of the protective portion perpendicular to the circumferential direction.

Bonded assembly including interconnect-level bonding pads and methods of forming the same

A bonded assembly includes a first semiconductor die that includes first metallic bonding structures embedded within a first bonding-level dielectric layer, and a second semiconductor die that includes second metallic bonding structures embedded within a second bonding-level dielectric layer and bonded to the first metallic bonding structures by metal-to-metal bonding. One of the first metallic bonding structures a pad portion, and a via portion located between the pad portion and a first semiconductor device in the first semiconductor die, the via portion having second tapered sidewalls.

SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME
20250357401 · 2025-11-20 · ·

Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises semiconductor chips stacked on a substrate and including first and second pads on top surfaces thereof, and bonding wires connecting the first and second pads to the substrate. The semiconductor chips alternately protrude in a first direction and its opposite direction. The semiconductor chip has a first lateral surface spaced apart from another semiconductor chip. The top surface of the semiconductor chip is provided thereon with a first arrangement line extending along the first lateral surface and with second arrangement lines extending from opposite ends of the first arrangement line. Wherein as a distance between the first and second arrangement lines increases, a distance between the second arrangement lines and the first lateral surface increases. The first pads are arranged along the first arrangement line. The second pads are arranged along the second arrangement lines.

Semiconductor package

A semiconductor package comprises a first die having a central region and a peripheral region that surrounds the central region; a plurality of through electrodes that penetrate the first die; a plurality of first pads at a top surface of the first die and coupled to the through electrodes; a second die on the first die; a plurality of second pads at a bottom surface of the second die, the bottom surface of the second die facing the top surface of the first die; a plurality of connection terminals that connect the first pads to the second pads; and a dielectric layer that fills a space between the first die and the second die and surrounds the connection terminals. A first width of each of the first pads in the central region may be greater than a second width of each of the first pads in the peripheral region. Each of the connection terminals may include a convex portion at a lateral surface thereof, which protrudes beyond a lateral surface of a respective first pad and a lateral surface of a respective second pad. The convex portion may protrude in a direction away from a center of the first die. Protruding distances of the convex portions may increase in a direction from the center of the first die toward an outside of the first die.

SEMICONDUCTOR PACKAGE
20260005200 · 2026-01-01 ·

A semiconductor package includes a package substrate having a first side portion adjacent to a first edge, and a second side portion adjacent to a second edge opposite the first edge; a plurality of first substrate pads on the package substrate at the first side portion of the package substrate; a first chip on the package substrate; a second chip stacked on the first chip in a step-wise manner to result in a first exposure region exposing a portion of a surface of the first chip with respect to the second chip due to the step-wise stacking, the first exposure region being adjacent to a first edge of the first chip; a plurality of first bonding pads on a first portion of the first exposure region, the first portion of the first exposure region being adjacent to the first edge of the first chip; a plurality of second bonding pads on a second portion of the first exposure region, the second portion of the first exposure region further from the first edge of the first chip than the first portion of the first exposure region is to the first edge of the first chip, the plurality of second bonding pads being electrically insulated from any circuit components in the first chip; a plurality of third bonding pads on a surface of the second chip; and a plurality of bonding wires electrically connecting the third bonding pads to the first substrate pads via the second bonding pads.