There is provided a semiconductor device that includes a wiring layer, a plurality of bonding layers arranged on the wiring layer and having conductivity, and a semiconductor element having a rear surface facing the wiring layer and a plurality of pads provided on the rear surface, and bonded to the wiring layer via the plurality of bonding layers, wherein the plurality of bonding layers are arranged in a grid shape when viewed along a thickness direction, wherein each of the plurality of pads is electrically connected to a circuit formed inside the semiconductor element and any of the plurality of bonding layers, and wherein at least one of the plurality of pads is located to be spaced apart from the plurality of bonding layers when viewed along the thickness direction.

The present disclosure provides a chip structure, a packaging structure and a manufacturing method for the chip structure. The chip structure includes at least one chip body, each of which includes at least one radio frequency front-end device; the chip structure further includes a redistribution layer stacked on the chip body and at least one pin on the redistribution layer; each radio frequency front-end device corresponds to one pin, which is electrically connected to the radio frequency front-end device through an electrical connector extending through the redistribution layer; an extending direction of the radio frequency front-end device is consistent with an extending direction of the pin corresponding to the radio frequency front-end device; a surface of the pin distal to the redistribution layer is a first plane. In the present disclosure, with the first plane, the chip may be directly and electrically connected to a flexible circuit board.

A wafer level chip scale package includes a semiconductor substrate having a first thickness, an input-output pad formed on the semiconductor substrate, a front metal layer having a second thickness formed on the input-output pad, a back metal layer having a third thickness formed on a bottom of the semiconductor substrate, and a metal bump formed on the semiconductor substrate.

A semiconductor wafer has an edge support ring around a perimeter of the semiconductor wafer and conductive layer formed over a surface of the semiconductor wafer within the edge support ring. A first stencil is disposed over the edge support ring with first openings aligned with the conductive layer. The first stencil includes a horizontal portion over the edge support ring, and a step-down portion extending the first openings to the conductive layer formed over the surface of the semiconductor wafer. The horizontal portion may have a notch with the edge support ring disposed within the notch. A plurality of bumps is dispersed over the first stencil to occupy the first openings over the conductive layer. A second stencil is disposed over the edge support ring with second openings aligned with the conductive layer to deposit a flux material in the second openings over the conductive layer.

A device includes a semiconductor die. The semiconductor die includes a device layer, an interconnect layer over the device layer, a conductive pad over the interconnect layer, a conductive seed layer directly on the conductive pad, and a passivation layer encapsulating the conductive pad and the conductive seed layer.

Provided is a semiconductor package including a first bump pad on a first substrate, a second bump pad on a second substrate, a core material for reverse reflow between the first bump pad and the second bump pad, and a solder member forming a solder layer on the core material for reverse reflow. The solder member is in contact with the first bump pad and the second bump pad. Each of a first diameter of the first bump pad and a second diameter of the second bump pad is at least about 1.1 times greater than a third diameter of the core material for reverse reflow. The core material for reverse reflow includes a core, a first metal layer directly coated on the core, and a second metal layer directly coated on the first metal layer.

A method for forming the conductive layer includes: providing a first conductive film and a solution with a conductive material; coating a surface of the first conductive film with the solution, before performing the coating, a temperature of the first conductive film being lower than an evaporation temperature or a sublimation temperature of the solution; and in a process step of performing the coating or after performing the coating, heating the first conductive film, such that the temperature of the first conductive film is higher than or equal to the evaporation temperature or the sublimation temperature of the solution, and forming a second conductive film covering the surface of the first conductive film, wherein the second conductive film including the conductive material.

A semiconductor device structure and a manufacturing method are provided. The semiconductor device structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive trace over the dielectric layer. The semiconductor device structure further includes a conductive feature over the conductive trace, and a width of the conductive feature is substantially equal to or larger than a maximum width of the conductive trace. In addition, the semiconductor device structure includes a conductive bump over the conductive feature.

A semiconductor package includes a first die having a first surface, a first conductive bump over the first surface and having first height and a first width, a second conductive bump over the first surface and having a second height and a second width. The first width is greater than the second width and the first height is substantially identical to the second height. A method for manufacturing the semiconductor package is also provided.

Disclosed are semiconductor devices and their fabrication methods. The semiconductor device comprises a pad on a semiconductor chip, a protective layer on the semiconductor chip and having an opening that exposes a portion of a top surface of the pad, and a bump structure electrically connected to the pad. The bump structure includes a metal layer on the pad and a solder ball on the metal layer. A first width of the metal layer is about 0.85 times to about 0.95 times a second width of the opening.