A semiconductor device including a first structure including a first conductive pattern, the first conductive pattern exposed on an upper portion of the first structure, a mold layer covering the first conductive pattern, a second structure on the mold layer, and a through via penetrating the second structure and the mold layer, the through via electrically connected to the first conductive pattern, the through via including a first via segment in the second structure and a second via segment in the mold layer, the second via segment connected to the first via segment, an upper portion of the second via segment having a first width and a middle portion of the second via segment having a second width greater than the first width may be provided.

A semiconductor package including an insulating encapsulation, an integrated circuit component, and conductive elements is provided. The integrated circuit component is encapsulated in the insulating encapsulation, wherein the integrated circuit component has at least one through silicon via protruding from the integrated circuit component. The conductive elements are located on the insulating encapsulation, wherein one of the conductive elements is connected to the at least one through silicon via, and the integrated circuit component is electrically connected to the one of the conductive elements through the at least one through silicon via.

A semiconductor package including an insulating encapsulation, an integrated circuit component, and conductive elements is provided. The integrated circuit component is encapsulated in the insulating encapsulation, wherein the integrated circuit component has at least one through silicon via protruding from the integrated circuit component. The conductive elements are located on the insulating encapsulation, wherein one of the conductive elements is connected to the at least one through silicon via, and the integrated circuit component is electrically connected to the one of the conductive elements through the at least one through silicon via.

A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, a first metal layer located on the first semiconductor substrate, a second metal layer located on the second semiconductor substrate, a third metal layer, a first alloy layer, and a second alloy layer. The third metal layer extends between the first metal layer and the second metal layer. The first alloy layer comprises components of the first and third metal layers, and is provided between the first metal layer and the third metal layer. The second alloy layer comprises components of the second and third metal layers, and is provided between the second metal layer and the third metal layer. At least one of the first metal the second metal layers projects into the third metal layer at a circumferential edge portion thereof.

A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a first liner and then the opening is filled with a conductive material. A backside of the semiconductor substrate is thinned to expose the first liner, which is subsequently removed and a second liner formed with a low-k or extra low-k dielectric is formed in its place.

The present disclosure provides a microcontroller unit and its fabrication method. The microcontroller unit includes a logic control substrate, and also includes at least one memory die and at least one non-memory die, which are disposed on the logic control substrate. The logic control substrate includes a semiconductor device layer and an interconnection dielectric layer. A central processing unit and at least one logic controller are formed in the semiconductor device layer. All memory dies are disposed on the interconnection dielectric layer side by side or stacked one over another, and the at least one memory die is electrically connected to the central processing unit through a corresponding electrical interconnection structure in the interconnection dielectric layer. All non-memory dies are disposed on the interconnection dielectric layer side by side or stacked one over another and are electrically connected to corresponding logic controllers through corresponding electrical interconnection structures in the interconnection dielectric layer.

This semiconductor device is formed by stacking a plurality of semiconductor chips that each have a plurality of bump electrodes, each of the plurality of semiconductor chips being provided with an identification section formed on a respective side face. Each semiconductor chip has a similar arrangement for its respective plurality of bump electrodes, and each identification section is formed so that the positional relationship with a respective reference bump electrode provided at a specific location among the respective plurality of bump electrodes is the same in each semiconductor chip. The plurality of semiconductor chips are stacked such that the bump electrodes provided thereon are electrically connected in the order of stacking of the semiconductor chips, while the side faces on which the identification sections are formed are oriented in the same direction.

The present disclosure relates to a semiconductor device. The semiconductor device includes a semiconductor substrate, a conductive through electrode, an insulating film, a bump and a connection layer, wherein the connection layer comprises a patternable material with conductive particles. The conductive through electrode penetrates through the semiconductor substrate. The patternable material comprises photosensitive material. The photosensitive material is a photoresist or polyimide. The conductive particles comprise copper (Cu), nickel (Ni), gold (Au), or silver (Ag). The connection layer is formed by spin coating, CVD (chemical vapor deposition) process or PVD (physical vapor deposition) process. The insulating film surrounds the conductive through electrode and electrically isolates the conductive through electrode from the is substrate. The bump is disposed over the conductive through electrode. The connection layer is disposed over the bump.

An optical sensor module and a sensor chip thereof are provided. The optical sensor module includes a substrate, a sensor chip and a passive chip. The sensor chip is disposed on the substrate, and the sensor chip includes a chip body having an active region located at a top side thereof and a recess portion depressed from a top surface of the chip body. The passive chip is accommodated in the recess portion, and a depth of the recess portion is greater than a thickness of the passive chip.

A semiconductor package includes a build-up structure; a semiconductor disposed on the build-up structure in a flip-chip manner and having a plurality of bumps penetrating therethrough; an electronic element disposed on the semiconductor chip; and an encapsulant formed on the build-up structure and encapsulating the semiconductor chip and the electronic element, thereby improving the product yield and the overall heat dissipating efficiency.